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1. 发明专利

JP2011042576A Method of manufacturing silicon semiconductor wafer having low defect density 有权
标题翻译：制造具有低缺陷密度的硅半导体晶体管的方法
公开(公告)号：JP2011042576A
公开(公告)日：2011-03-03
申请号：JP2010265148
申请日：2010-11-29
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： GRAEF DIETER , VON AMMON WILFRIED , WAHLICH REINHOLD , KROTTENTHALER PETER , LAMBERT ULRICH
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： PROBLEM TO BE SOLVED: To provide an optimized method of manufacturing a silicon wafer capable of obtaining a silicon wafer having a low defect density especially in a region near the surface and an oxygen doping concentration of at least 4×10
17 /cm
3 .
SOLUTION: This is a method of manufacturing a silicon wafer having a low defect density in which (a) a silicon single crystal having an oxygen doping concentration of at least 4×10
17 /cm
3 is manufactured by solidifying and cooling a melting substance where the hold time of the single crystal during cooling in the temperature range of 850-1,100°C is less than 80 minutes, (b) the single crystal is processed to form the silicon wafer and (c) the silicon wafer is annealed at least at a temperature of 1,000°C for at least an hour.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种优化的制造硅晶片的方法，所述硅晶片能够获得具有低缺陷密度的硅晶片，特别是在表面附近的区域中，氧掺杂浓度至少为4×10 17 /厘米 3 。解决方案：这是一种制造具有低缺陷密度的硅晶片的方法，其中（a）氧掺杂浓度至少为4×10 17 SP / cm 3的硅单晶， SP> 3 是通过固化和冷却在850-1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟的熔融物质，（b）将单晶加工以形成硅晶片，（c）至少在1000℃的温度下将硅晶片退火至少1小时。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2005033217A Manufacturing method of silicon semiconductor wafer 审中-公开
标题翻译：硅半导体波形的制造方法
公开(公告)号：JP2005033217A
公开(公告)日：2005-02-03
申请号：JP2004237738
申请日：2004-08-17
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： GRAEF DIETER , VON AMMON WILFRIED , WAHLICH REINHOLD , KROTTENTHALER PETER , LAMBERT ULRICH
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： PROBLEM TO BE SOLVED: To provide an optimized manufacturing method of a silicon wafer which can obtain the silicon wafer in which oxygen doping concentration having low defect density is at least 4 × 10
17 /cm
3 in especially near front surface region.
SOLUTION: In the manufacturing method, (a) a silicon single crystal is processed which has an oxygen doping concentration of at least 4 × 10
17 /cm
3 and a nitrogen doping concentration of at least 1 × 10
14 /cm
3 , (b) the silicon wafer is formed by processing the silicon single crystal obtained by (a), and (c) the silicon wafer obtained by (b) is annealed at least at the temperature of 1000°C and for at least 1 hour. The distribution of defect size is shifted toward that of much smaller one by the nitrogen doping. When the silicon single crystal is manufactured in such a way that it is pulled up by Czochralski method in (a), the silicon single crystal under raising is forcibly cooled in such a manner that it stays at 1100°C to 850°C for under 80 minutes.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以获得其中具有低缺陷密度的氧掺杂浓度的硅晶片的硅晶片的优化制造方法为至少4×10 14 SP / SP> 3 特别在前表面区域附近。＆lt; P＆gt;解决方案：在制造方法中，（a）处理具有至少4×10 17 / cm 3 / SP>的氧掺杂浓度的硅单晶，至少1×10 14 N / SP 3 / cm 3 SP 3的氮掺杂浓度，（b）通过处理由（a）获得的硅单晶和（c）通过（b）获得的硅晶片至少在1000℃的温度下进行至少1小时的退火。通过氮掺杂，缺陷尺寸的分布向小得多的分布。当以（a）中通过Czochralski法拉制硅单晶时，将提高的单晶硅强制冷却至1100℃至850℃以下， 80分钟版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JPS5913695A Silicon crystal growth 失效
标题翻译：硅晶体生长
公开(公告)号：JPS5913695A
公开(公告)日：1984-01-24
申请号：JP8285883
申请日：1983-05-13
申请人： Ibm
发明人： HAITENDORA GOOSHIYU , ASHIYOTSUKU MURUGAI , UORUFUGANGU ARUFURETSUDO UESUT
IPC分类号： C30B15/00 , C30B15/04 , C30B15/14 , C30B15/20 , C30B15/22 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/22 , C30B15/04 , C30B15/14 , C30B15/30 , Y10S117/916

5. 发明专利

JP2006315950A Method for manufacturing silicon semiconductor wafer having low defect density 有权
标题翻译：制造具有低缺陷密度的硅半导体波长的方法
公开(公告)号：JP2006315950A
公开(公告)日：2006-11-24
申请号：JP2006134239
申请日：2006-05-12
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： GRAEF DIETER , VON AMMON WILFRIED , WAHLICH REINHOLD , KROTTENTHALER PETER , LAMBERT ULRICH
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer having a low defect density especially in a region near the surface.
SOLUTION: (a) A silicon single crystal having an oxygen doping concentration of at least 4×10
17 /cm
3 is manufactured by cooling and solidifying a melt. At that time, the holding time of the single crystal being cooled within a temperature range of 850-1,100°C is made shorter than 80 min. (b) The silicon wafer is formed by processing the single crystal, and (c) the silicon wafer is annealed at at least a temperature of 1,000°C for at least 1 hour.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有低缺陷密度的硅晶片的制造方法，特别是在靠近表面的区域中。解决方案：（a）通过冷却和固化熔体来制造氧掺杂浓度为至少4×10 17 / SP 3 / cm 3 SP 3的硅单晶。此时，将在850-1100℃的温度范围内冷却的单晶的保持时间短于80分钟。（b）通过处理单晶形成硅晶片，（c）将硅晶片在至少1000℃的温度下退火至少1小时。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP4853802B2 Method for producing a silicon single crystal 有权
标题翻译：空值
公开(公告)号：JP4853802B2
公开(公告)日：2012-01-11
申请号：JP2005175593
申请日：2005-06-15
申请人：ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人：豊岸田 , 輝幸玉木 , 聖記竹林
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/00 , C30B29/06 , Y10S117/916

9. 发明专利

JPWO2004073057A1 シリコンウェーハの製造方法审中-公开
公开(公告)号：JPWO2004073057A1
公开(公告)日：2006-06-01
申请号：JP2004568207
申请日：2003-12-19
申请人：株式会社Sumco , 株式会社Sumco
发明人：梅野　繁 , 繁梅野 , 宝来　正隆 , 正隆宝来 , 正和佐野 , 正和佐野 , 新一郎三木 , 新一郎三木
IPC分类号： H01L21/324 , C30B29/06 , C30B33/00 , H01L21/02 , H01L21/26 , H01L21/261 , H01L21/322 , H01L21/762 , H01L27/12
CPC分类号： H01L21/2605 , C30B29/06 , C30B33/005 , H01L21/261 , H01L21/3225 , H01L21/76254 , Y10S117/916
摘要：活性層側シリコンウェーハに酸化性雰囲気で熱処理を施して埋め込み酸化膜を形成する。この埋め込み酸化膜を介して支持側ウェーハに貼り合わせてSOIウェーハを製造する。上記酸化熱処理が、温度をT(℃)とし、活性層側シリコンウェーハの格子間酸素濃度を[Oi](atoms/cm3)としたとき、次式を満たす。[Oi]≦2.123×1021exp(−1.035/k(T+273))

10. 发明专利

JPS5727996A Manufacture of single crystal 失效
标题翻译：单晶的制造
公开(公告)号：JPS5727996A
公开(公告)日：1982-02-15
申请号：JP8977281
申请日：1981-06-12
申请人： Ibm
发明人： JIYATSUKU KONBURONDO , JIYANNKUROODO FUERITSUKUSU
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/18 , H01L21/208
CPC分类号： C30B29/06 , C30B15/305 , Y10S117/916

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