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1. 发明专利

JPH11266546A ELECTRONIC DEVICE 失效
公开(公告)号：JPH11266546A
公开(公告)日：1999-09-28
申请号：JP6591998
申请日：1998-03-16
申请人： TOSHIBA CORP
发明人： FUSE TSUNEAKI , YOSHIMI MAKOTO , YOSHITOMI SADAYUKI , INOU KAZUMI , KATSUMATA YASUHIRO , WATANABE SHIGEYOSHI
IPC分类号： H02J7/00 , H04B1/3822 , H04B1/40 , H04B7/26 , H04M1/00 , H04W52/02 , H04W88/02
摘要： PROBLEM TO BE SOLVED: To provide an electronic device, which is capable of reducing the power consumption of a system as a whole and improving the performance and function of the system by integrating the functions required for the system into integrated circuits which are made to match with each characteristic and providing a power supply system adaptive to each integrated circuit. SOLUTION: A transmission and reception circuit 2 which is principally a high-frequency circuit is constituted of a transmission/reception change-over switch 10, and a power amplifier 11 is integrated into a single integrated circuit. Then an RF signal processing circuit 3, which is principally an analog circuit constituted of a low-noise amplifier 12, a reception mixer 13, a transmission mixer 14, a voltage-controlled transmitter 16, a frequency synthesizer 15, etc., is integrated into another integrated circuit. In addition, a base-band signal processing circuit 4, which is principally a digital circuit composed of a demodulator 17, a modulator 18, a sound signal processing circuit 19, a CPU 21 for control, a memory 22, an image signal processing circuit 20, etc., is integrated into a third integrated circuit, so as to optimize the voltage supplied from a voltage control circuit 5 in accordance with the characteristics of each circuit.

2. 发明专利

JPH06215572A DYNAMIC SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH06215572A
公开(公告)日：1994-08-05
申请号：JP393293
申请日：1993-01-13
申请人： TOSHIBA CORP
发明人： KATO DAISUKE , WATANABE SHIGEYOSHI
IPC分类号： G11C11/407 , G11C11/409
摘要： PURPOSE:To make nonselection word line potential perfectly operating in the same degree of chip area and current consumption as usual the potential different from external potential by making potential, from plural word lines containing the word line connected to a cell written already into prescribed potential of nonselective word line successively. CONSTITUTION:The potential of nonselection word lines in respective blocks are made into source potential Vsj by supplying the source potential Vsj to row decoders and word line drivers in respective blocks. By the circuit, the potential of the nonselective word lines in respective blocks are external power source potential Vss until any word line among blocks is selected first, and become VwL lower than Vss after selected. At this time, no potential of the nonselection word line is limited to Vss until the word line among respective blocks is selected first. The potential of the nonselection word line are made prescribed L level from the word line group containing the word line connected to the memory cell written already successively.

3. 发明专利

JPH04302470A DYNAMIC SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH04302470A
公开(公告)日：1992-10-26
申请号：JP9162391
申请日：1991-03-29
申请人： TOSHIBA CORP
发明人： WATANABE SHIGEYOSHI , WATANABE YOJI
IPC分类号： G11C11/401 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To provide a DRAM having an SGT cell structure capable of decreasing soft errors and improving he pause characteristic. CONSTITUTION:A columnar semiconductor layer 3 is surrounded by a buried storage node electrode 14 with insulating film 13 between them. The electrode 14 has an upper end that is in direct contact with a diffused layer 11 located in the middle of the semiconductor layer 3. A capacitor is formed of the electrode 14, a dielectric film 15 and a cell plate 16 buried in a trench 2. The semiconductor layer 3 is covered with a gate insulator 18, on which word lines 19 extend in one direction. Bit lines 21 are in contact with a diffused layer on the semiconductor layer 3 and extend perpendicular to the word lines 19.

4. 发明专利

JPH04212472A MANUFACTURE OF NON-VOLATILE SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH04212472A
公开(公告)日：1992-08-04
申请号：JP40115790
申请日：1990-12-10
申请人： TOSHIBA CORP
发明人： SHIRATA RIICHIRO , MOMOTOMI MASAKI , NAKAYAMA RYOZO , ARITOME SEIICHI , KIRISAWA RYOHEI , ENDO TETSUO , WATANABE SHIGEYOSHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To manufacture the title non-volatile semiconductor memory highly integrated by a method wherein the integrate spaces in the NAND cells within the NAND cell type non-volatile semiconductor memory are made less than those in the processing limit by PER. CONSTITUTION:In order to pattern-form the control gates by polycrystal silicon films in the gate regions of multiple memory cells comprising NAND cells, the first masking members 6 are patternformed in every exceeding one gate regions and then the second masking members 8 are pattern-formed between the first and second masking members 6 and 8 as the etching resistant masks so that the integrate spaces may be minimized without shortening respective intervals between the first and second masking materials 6 and 8.

5. 发明专利

JPH03129768A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH03129768A
公开(公告)日：1991-06-03
申请号：JP34436089
申请日：1989-12-28
申请人： TOSHIBA CORP
发明人： SAKUI YASUSHI , MASUOKA FUJIO , WATANABE SHIGEYOSHI , FUSE TSUNEAKI , HASEGAWA TAKEHIRO
IPC分类号： G11C11/402 , H01L21/8242 , H01L27/108
摘要： PURPOSE:To enable highly efficient design of a high density DRAM array and to reduce the number of sense amplifier and the chip area by activating a bipolar transistor, at the time of read out, and operating a DRAM cell as a gain cell with a reverse base current. CONSTITUTION:A capacitive load exists between the base and the emitter. When the base voltage VBE is in the range of 0V 0.87V, positive base current flows through the base to the emitter and thereby the voltage VBE across the load drops and approaches to 0.87V. Since the VBE is maintained at 0V or 0.87V, self amplifying function can be provided when the voltage is maintained. Consequently, a memory is constituted with a bipolar transistor through utilization of voltage holding function.

6. 发明专利

JPH03108372A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03108372A
公开(公告)日：1991-05-08
申请号：JP24333389
申请日：1989-09-21
申请人： TOSHIBA CORP
发明人： NAKANO HIROAKI , HASEGAWA TAKEHIRO , FUSE TSUNEAKI , SAKUI YASUSHI , WATANABE SHIGEYOSHI , MASUOKA FUJIO
IPC分类号： H01L29/68 , H01L27/10
摘要： PURPOSE:In a memory cell wherein reverse base currents are used, to enable base currents to be let flow even at low voltage by setting the concentration of the collector of a bipolar transistor to the specific value or more. CONSTITUTION:In an NPN bipolar transistor Tr11, when the voltage VCE between a collector and an emitter becomes large to some degree, reverse base currents are observed. And if the impurity concentration of the collector is 1.3X10 cm or higher, the reverse base currents are observed at 5V or lower voltage VCE. Accordingly, this Tr11 can be operated with a single power of 5V. In this case, the base impurity concentration is set to 3.9X10 cm or lower, and the emitter concentration is set to 4.2X10 cm or higher. The base concentration and the emitter concentration don't affect the voltage V so much as the collector concentration.

7. 发明专利

JPH02228068A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02228068A
公开(公告)日：1990-09-11
申请号：JP4940389
申请日：1989-03-01
申请人： TOSHIBA CORP
发明人： HASEGAWA TAKEHIRO , SAKUI YASUSHI , WATANABE SHIGEYOSHI , MASUOKA FUJIO
IPC分类号： G11C11/41 , G11C11/401 , G11C11/404 , G11C11/411 , G11C11/412 , H01L21/331 , H01L21/8229 , H01L27/102 , H01L29/73 , H01L29/732
摘要： PURPOSE:To enable power consumption to be decreased by changing the currents which flow to the collector of a bipolar transistor while maintaining reverse currents, between the first condition where a memory cell holds data and the second condition to read or write data. CONSTITUTION:This consists of memory cells M/C's, each of which is constituted of a switching element which is controlled by a word line WL, being provided between the base of a bipolar transistor Q2 and a bit line BL. The currents, which flow to the collector of the bipolar transistor Q2, are set lower in the first conditions than in the second conditions while maintaining reverse bias currents, between the first condition where this memory cell holds data and the second condition to read or write data. That is, the collector currents of the bipolar transistor Q2 are more reduced at the time of data holding than the time of read or write. Hereby, through currents, which flow from the collector to the emitter, decreases and power consumption decreases.

8. 发明专利

JPH0271553A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0271553A
公开(公告)日：1990-03-12
申请号：JP16087488
申请日：1988-06-30
申请人： TOSHIBA CORP
发明人： HASEGAWA TAKEHIRO , SAKUI YASUSHI , WATANABE SHIGEYOSHI , MASUOKA FUJIO
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L21/8242 , H01L21/8249 , H01L27/06 , H01L27/082 , H01L27/108
摘要： PURPOSE:To make it possible to make a base current flow in a reverse direction according to a base potential in addition to the forward base current of this device by a method wherein a collector-emitter voltage is set in a high voltage and parallel-connected tunnel diodes and a base-emitter tunnel current are used. CONSTITUTION:A base-emitter forward base current and a collector-base reverse base current are respectively assumed to be IBE and ICB and at the time of ¦IBE¦

9. 发明专利

JPH021162A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH021162A
公开(公告)日：1990-01-05
申请号：JP15819088
申请日：1988-06-28
申请人： TOSHIBA CORP
发明人： WATANABE SHIGEYOSHI , SAKUI YASUSHI , FUSE TSUNEAKI , HASEGAWA TAKEHIRO , SESHIMO TOSHIKI , NITAYAMA AKIHIRO , ARITOME SEIICHI , HORIGUCHI FUMIO , MASUOKA FUJIO
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L27/10 , H01L29/72 , H01L29/732
摘要： PURPOSE:To realize a semiconductor device capable of executing a storage action by means of a boundary potential of a positive base current and a negative base current by using a bipolar transistor where a base current can flow in the reverse direction in addition to a base current in a forward direction according to a base potential. CONSTITUTION:When a forward base current between a base and an emitter and a reverse base current between a collector and the base are designated as IBE and ICB, respectively, a bipolar transistor whose collector-emitter voltage VCE has been set so as to become IBE

10. 发明专利

JPS6363197A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPS6363197A
公开(公告)日：1988-03-19
申请号：JP20719486
申请日：1986-09-03
申请人： TOSHIBA CORP
发明人： SAKUI YASUSHI , WATANABE SHIGEYOSHI
IPC分类号： G11C11/401 , G11C11/409 , G11C11/4091 , G11C11/4097 , H05B41/24
摘要： PURPOSE:To speed up the operation of a dRAM and to reduce its power consumption by introducing a bit line sense amplifier which uses a bipolar transistor (TR) and a division bit line system. CONSTITUTION:Plural couples of division bit line DBL01 and -DBL01, DBL02 and -DBL02... are connected to main bit lines BL and -BL through MOS TRs Q1, Q2, Q5, Q7... as transfer gates, and the main bit lines BL and -BL are provided with differential amplifier type main bit line sense amplifiers MSAs (MSA0...MSAN) constituted by using bipolar TRs. Consequently, when data are read out of memory cells M1, M2..., a signal with a small logical amplitude from a bit line is detected by a differential amplifier using a bipolar TR, so high-speed operation is performed. Further, the power consumption for bit line discharging is a half as large as that of all bit lines and stored charges are discharged.

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