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1. 发明专利

JP2005019475A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005019475A
公开(公告)日：2005-01-20
申请号：JP2003178625
申请日：2003-06-23
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , SAITO KIMIHIDE
IPC分类号： B05D3/00 , B05C9/12 , B05C11/00 , B05C13/02 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a device and method for forming coating film by which the vaporization of a solvent from a coating liquid applied to the surface of a substrate can be suppressed at the time of transporting the substrate coated with the coating liquid from a coating unit to the unit of the next step.
SOLUTION: A substrate transporting means 23 is provided with holding arms 41a-41c constituted in three stages, and a drying preventing plate 5 having a larger size than the substrate has above the lowest third holding arm 41c when the arm 41c is at the transporting position. At the time of transporting a wafer from the coating unit 24 which applies the coating liquid containing the components of the applied film and the solvent to the surface of the wafer to a low-pressure drying unit 25 which removes the solvent from the coating liquid applied to the surface of the wafer by vaporizing the solvent, the wafer is mounted on the third holding arm 41c and the whole surface of the wafer is covered with the drying preventing plate 5 through a space. Consequently, the thickness uniformity of the obtained applied film can be improved, because the vaporization of the solvent from the applied film formed on the surface of the wafer can be suppressed while the wafer is transported.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成涂膜的装置和方法，通过该装置和方法，可以在运送涂覆有涂层的基板时抑制涂布在基板表面上的涂布液的溶剂蒸发液体从涂层单元到下一步的单位。解决方案：基板传送装置23设置有三级构成的保持臂41a-41c，当臂41c处于位置时，具有比基板大的干燥防止板5在最低的第三保持臂41c的上方运输位置。在将包含涂膜和溶剂的成分的涂布液施加到晶片表面的涂布单元24的时候，由低压干燥单元25除去涂布液中的溶剂通过蒸发溶剂到晶片的表面，将晶片安装在第三保持臂41c上，并且通过空间将干燥防止板5覆盖晶片的整个表面。因此，可以提高所得涂膜的厚度均匀性，因为可以在输送晶片的同时抑制形成在晶片表面上的涂膜的溶剂蒸发。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005116553A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005116553A
公开(公告)日：2005-04-28
申请号：JP2003344753
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , SAITO KIMIHIDE , MIKATA YUICHI
IPC分类号： B05D1/26 , B05C5/00 , B05C13/00 , B05D7/00 , H01L21/31 , H01L21/312 , H01L21/768
CPC分类号： H01L21/6715 , G03F7/162 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To surely apply a coating liquid onto all the surface of a wafer so as to form a coating film when the coating liquid is applied on the surface of the wafer in a manner wherein a picture is drawn with a single stroke of the brush, while a coating liquid nozzle is made to scan the surface of the wafer in a lateral direction and while the wafer is intermittently moved in a longitudinal direction.
SOLUTION: The wafer is so oriented as to enable the scanning direction of the coating liquid nozzle 5 to intersect with any of dicing lines D cut in the surface of the wafer W to split the wafer W into discrete chips, then a liquid coating operation is carried out, and the wafer W is reoriented so as to recover its original orientation and then unloaded. The set angles of the wafers W of each type are previously written in their recipes in accordance with categoris the wafter W, and the orientation of the wafer W is set up by selection of the recipe.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了确保将涂布液施加到晶片的所有表面上，以便当涂覆液体以如下方式施加在晶片的表面上时形成涂膜，其中以同时使涂布液喷嘴在横向方向上扫描晶片的表面，同时晶片在纵向上间歇地移动。解决方案：晶片被定向成使得涂布液喷嘴5的扫描方向能够与在晶片W的表面上切割的任何切割线D交叉，以将晶片W分离成离散的芯片，然后将液体进行涂布操作，并且将晶片W重新定向以恢复其原始取向然后卸载。每种类型的晶片W的设定角度根据分类W预先写入其配方中，并且通过选择配方来建立晶片W的取向。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005013787A Coating film-forming device and coating film-forming method 审中-公开
标题翻译：涂膜成膜装置和涂膜成膜方法
公开(公告)号：JP2005013787A
公开(公告)日：2005-01-20
申请号：JP2003178626
申请日：2003-06-23
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , MIKATA YUICHI , SAITO KIMIHIDE
IPC分类号： B05D1/26 , B05C5/00 , B05C11/06 , B05C11/10 , G03F7/16 , H01L21/00 , H01L21/027 , H01L21/31
CPC分类号： H01L21/6715
摘要： PROBLEM TO BE SOLVED: To form an insulating film of in-plane uniformity on a substrate surface by controlling a drying state of a coating liquid applied on the substrate surface.
SOLUTION: While supplying the coating liquid from a coating liquid nozzle 4 onto a surface of a wafer W held by a substrate holding part for horizontally holding the substrate, the substrate holding part is relatively moved in the back and forth directions to the coating liquid nozzle 4 to apply the coating liquid onto the wafer W surface from a front end edge to a back end edge and whole surface of a region where the coating liquid is applied is covered with a drying prevention plate 6a (6b) provided by facing the surface parallel at a height position of ≤2mm from the wafer W surface. In this case, since a solvent atmosphere of high concentration is formed between the wafer W surface and the drying prevention plate 6a, a drying state of the coating liquid is adjusted within the wafer W surface and thereby the insulating film of uniform film thickness can be formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过控制施加在基板表面上的涂布液的干燥状态，在基板表面上形成面内均匀性的绝缘膜。解决方案：在将涂布液从涂液喷嘴4供给到由用于水平保持基板的基板保持部保持的晶片W的表面上时，基板保持部相对于前后方向相对移动涂布液喷嘴4将涂布液从前端边缘到后端边缘以及施加涂布液的区域的整个表面涂覆在晶片W表面上，用防干燥板6a（6b）覆盖，所述防干燥板6a 表面在与晶片W表面的≤2mm的高度位置平行。在这种情况下，由于在晶片W表面和防干燥板6a之间形成高浓度的溶剂气氛，因此在晶片W表面内调节涂布液的干燥状态，能够使膜厚均匀的绝缘膜形成。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005217282A Method and apparatus for forming coating film 审中-公开
标题翻译：用于形成涂膜的方法和装置
公开(公告)号：JP2005217282A
公开(公告)日：2005-08-11
申请号：JP2004023730
申请日：2004-01-30
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , SAITO KIMIHIDE
IPC分类号： G03F7/16 , B05C5/00 , B05C11/08 , B05C11/10 , H01L21/027 , H01L21/31 , H01L21/316 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a coating film forming method and coating film forming apparatus in which a coating liquid is applied to the surface of a substrate, an air current flowing from the center to the outside is then formed along with the surface, and an intra-surface uniform coating film can be formed on the surface of the substrate, by controlling the flow of the coating liquid on the substrate when forming the film by drying the coating liquid under pressure reduction. SOLUTION: A liquid film is formed by supplying a coating liquid over the surface of a substrate so as to form a non-coated area all over the circumference at the edge of the substrate in the state of horizontally holding the substrate, the substrate is then carried into a treatment container, and pressure in the treatment container is reduced while confronting a rectifier plate to the surface of the substrate near the substrate, thereby forming an air current flowing from the center to the outside along with the surface of the substrate, and drying the liquid film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种涂膜形成方法和涂膜形成装置，其中将涂布液施加到基板的表面，然后与中心向外形成从中心向外部流动的气流表面，并且可以通过在通过在减压下干燥涂布液来形成膜时控制基板上的涂布液的流动，从而在基板的表面上形成表面内均匀的涂膜。解决方案：通过在基板的表面上提供涂布液以在水平保持基板的状态下在基板的边缘处在整个圆周上形成未涂覆区域而形成液膜，然后将基板输送到处理容器中，并且在将整流板面对基板附近的基板的表面的同时减小处理容器中的压力，从而形成从中心向外流动的气流以及底物，并干燥液膜。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005111295A Coating film formation method and coating film formation device 审中-公开
标题翻译：涂膜成膜方法和涂膜成膜装置
公开(公告)号：JP2005111295A
公开(公告)日：2005-04-28
申请号：JP2003344754
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Seiko Epson Corp , Tokyo Electron Ltd , セイコーエプソン株式会社 , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , TAKEUCHI JUNICHI , SAITO KIMIHIDE
IPC分类号： G03F7/16 , B05C5/00 , B05C11/08 , B05D1/26 , H01L21/027 , H01L21/31 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a coating film formation device capable of forming a coating film having in-surface uniform property regarding film thickness when a surface of a substrate is coated with a coating liquid at a so-called picture drawn with a single stroke of the brush, and a coating film formation method. SOLUTION: First coating liquid lines L1 extending to left/right sides in a first coating step are successively formed on a surface of a wafer W from a front end side of the wafer W and thereafter, a second coating liquid line is formed between the first coating liquid lines L1 adjacent to each other in a second coating step from a rear end side or a front end side of the wafer W. Thereby, the coating liquid coated in the first coating step and the coating liquid coated in the second step are mixed, difference of dried degree of the coated coating liquid becomes small in the surface and film thickness of the coating film can be made uniform. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种涂膜形成装置，其能够形成在基板表面上涂覆有涂布液的表面均匀性的涂膜，所述涂布液以所谓的图片绘制，所述图像用刷子的单行程，以及涂膜形成方法。解决方案：从晶片W的前端侧在晶片W的表面上依次形成在第一涂覆步骤中向左/右侧延伸的第一涂布液体线L1，然后形成第二涂布液线在第二涂布步骤中，从晶片W的后端侧或前端侧彼此相邻的第一涂布液线L1之间。由此，涂布在第一涂布步骤中的涂布液和涂布在第二涂布液涂布涂布液的干燥程度的差异变小，涂膜的膜厚变得均匀。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2007054754A Evening method of coating film and evening apparatus 有权
标题翻译：涂膜和偶发装置的即时方法
公开(公告)号：JP2007054754A
公开(公告)日：2007-03-08
申请号：JP2005244069
申请日：2005-08-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERADA SHOICHI , MIZUNO GOSHI , UEHARA TAKESHI , YO HAJIME , FUJII HIROYUKI , MURAMATSU MAKOTO
IPC分类号： B05D3/12 , B05C11/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an evening method and an evening apparatus, for making a coating film over a wafer even fully and stably.
SOLUTION: A holding table 121 of the wafer W and an X-Y stage 122 for making the holding table 121 move are arranged in a treatment vessel 120 of an evening apparatus 65. After the coating film is formed over the wafer W, the wafer W is held on the holding table 121 to be reciprocally moved in the X direction and the Y direction by the X-Y stage 122. This reciprocal movement is carried out according to a pattern of a substrate of the coating film. For example, ditches of the X direction and the Y direction are formed on the pattern of the substrate and the reciprocal movement of the Y direction is carried out more times than the reciprocal movement of the X direction when more ditches of the X direction than ditches of the Y direction are formed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种即使完全稳定地在晶片上形成涂膜的晚间方法和晚间装置。解决方案：将晶片W的保持台121和用于使保持台121移动的XY台122布置在傍晚装置65的处理容器120中。在涂覆膜形成在晶片W上之后，晶片W被保持在保持台121上，以通过XY平台122在X方向和Y方向上往复移动。该往复运动根据涂膜的基板的图案进行。例如，在X方向和Y方向的沟槽形成在基板的图案上，并且当X方向的沟渠比沟渠更多时，Y方向的往复运动比X方向的往复运动更多地进行形成Y方向。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007243030A Planarizing equipment 有权
标题翻译：平面设备
公开(公告)号：JP2007243030A
公开(公告)日：2007-09-20
申请号：JP2006065960
申请日：2006-03-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERADA SHOICHI , MIZUNO GOSHI , UEHARA TAKESHI
IPC分类号： H01L21/31 , B08B1/02 , B08B3/02 , B08B3/12 , B08B7/04 , H01L21/027 , H01L21/304
CPC分类号： H01L21/31051 , B24B29/005 , H01L21/02065
摘要： PROBLEM TO BE SOLVED: To form a coated film such as a flat insulating film on a substrate like a wafer without using a chemical mechanical polishing (CMP) device.
SOLUTION: A substrate processing system 1 is provided with planarizing equipment 18 that hardens a coated insulating film A before it is hardened in a heating furnace. The planarizing equipment 18 has a spin chuck 71 that holds and rotates a wafer W, a brush 101 that is pressed against the coated insulating film A on the wafer W to grind the surface of the coated insulating film A, a first arm 81 for moving the brush 101 along the surface of the wafer W, a working liquid supply nozzle 110 supplying a working liquid onto the wafer W, and so on. The wafer W having the coated insulating film A in a soft state before being hardened is conveyed to the planarizing equipment 18, and the brush 101 is moved along the surface of the coated insulating film A while it is pressed against the coated insulating film A, thus planarizing the coated insulating film A to a predetermined film thickness.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在不使用化学机械抛光（CMP）器件的情况下，在诸如晶片的基板上形成诸如平坦绝缘膜的涂膜。解决方案：基板处理系统1设置有平面化设备18，其在涂覆的绝缘膜A在加热炉中硬化之前硬化。平面化设备18具有保持和旋转晶片W的旋转卡盘71，压在晶片W上的涂覆绝缘膜A上的刷101，以研磨涂覆的绝缘膜A的表面，用于移动的第一臂81 沿着晶片W的表面的刷子101，将工作液体供给到晶片W上的工作液体供给喷嘴110等。在硬化之前将具有软化状态的被覆绝缘膜A的晶片W输送到平面化设备18，并且刷101沿被覆绝缘膜A的表面移动，同时被压靠在被覆绝缘膜A上，从而将涂覆的绝缘膜A平坦化到预定的膜厚度。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007134434A Method of depositing coating film and its apparatus 有权
标题翻译：沉积涂膜的方法及其设备
公开(公告)号：JP2007134434A
公开(公告)日：2007-05-31
申请号：JP2005324664
申请日：2005-11-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERADA SHOICHI , MIZUNO GOSHI , UEHARA TAKESHI , KITANO TAKAHIRO
IPC分类号： H01L21/316 , B05C5/00 , B05C11/08 , B05C11/10 , B05D1/26 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method of depositing a coating film and its apparatus which can flatten a uniform and very precise coating film without using a heavy load process such as chemical mechanical polishing.
SOLUTION: This is a film deposition method for depositing a coating film on the surface of a semiconductor wafer W by supplying a coating liquid onto the semiconductor wafer W of a processed substrate having an unevenness on the surface. In this film deposition method, the wafer W formed with the coating film T of the coating liquid is placed in a solvent gas atmosphere, and then the solvent gas atmosphere is sucked. After the solvent concentration of the coating film becomes the same as the concentration of a selected coating liquid for supplement, the wafer W and a nozzle 10 for supplying the selected coating liquid are relatively moved in parallel to each other to supply the selected coating liquid from the nozzle 10 into the concave portions which are memorized in advance as those which need to be replenished with the coating liquid.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种沉积涂膜的方法及其装置，其可以在不使用诸如化学机械抛光的重负载过程的情况下平坦化均匀且非常精确的涂膜。解决方案：这是一种用于在半导体晶片W的表面上沉积涂膜的薄膜沉积方法，该方法是在表面上具有凹凸的处理基板的半导体晶片W上提供涂布液。在该成膜方法中，将形成有涂布液的涂膜T的晶片W置于溶剂气体气氛中，然后吸入溶剂气体气氛。在涂膜的溶剂浓度变得与选择的补充用涂布液的浓度相同之后，晶片W和用于供给所选择的涂布液的喷嘴10相互平行地相对移动，以将选择的涂布液从喷嘴10进入预先存储有需要补充涂布液的凹部的凹部。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007201428A Processing method of substrate and program 有权
标题翻译：基板和程序的处理方法
公开(公告)号：JP2007201428A
公开(公告)日：2007-08-09
申请号：JP2006333428
申请日：2006-12-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERADA SHOICHI , MIZUNO GOSHI , UEHARA TAKESHI
IPC分类号： H01L21/3205 , B05D3/12 , H01L21/316 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a processing method of a substrate for flattening a coating film without using a CMP technique.
SOLUTION: An insulating material is applied on a wafer W in a coating processing apparatus, to form an insulating film for coating. Next, in a heating processing apparatus, the wafer W is heated and the insulating film for coating is hardened half-way. Thereafter, in a flattening device, a brush is pressed against the surface of the insulating film for coating, and by a movement of this brush along the surface of the insulating film for coating, the insulating film for coating is flattened. Thereafter, the wafer W is transported to a heating furnace, and the insulating film for coating is completely hardened.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供不使用CMP技术的用于使涂膜变平的基板的处理方法。解决方案：在涂覆处理设备中将晶体W上施加绝缘材料，以形成用于涂覆的绝缘膜。接着，在加热处理装置中，对晶片W进行加热，将涂布用绝缘膜半硬化。此后，在平坦化装置中，刷子被压靠在用于涂覆的绝缘膜的表面上，并且通过该刷子沿着用于涂覆的绝缘膜的表面移动，涂层用绝缘膜变平。此后，晶片W被输送到加热炉，并且用于涂覆的绝缘膜完全硬化。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007142234A Method and apparatus for forming coating film 有权
标题翻译：用于形成涂膜的方法和装置
公开(公告)号：JP2007142234A
公开(公告)日：2007-06-07
申请号：JP2005335247
申请日：2005-11-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TERADA SHOICHI , MIZUNO GOSHI , UEHARA TAKESHI
IPC分类号： H01L21/027 , G03F7/16
CPC分类号： H01L21/6715
摘要： PROBLEM TO BE SOLVED: To provide a method for forming coating film and its apparatus, capable of forming a coating film, such as a resist film in a uniform state following the rugged surface of a substrate to be processed. SOLUTION: The film forming apparatus supplies a coating solution to a semiconductor wafer W of a substrate to be processed, having ruggedness on its surface for forming a coating film on the surface of the wafer. The apparatus comprises a processing chamber 12 for storing the wafer, while shutting off the wafer from the outside air; a solvent gas supply means 1 for supplying solvent gas into the processing chamber 12; a chuck 20, arranged in the processing chamber 12 and capable of rotatably holding the wafer, so that the surface of the wafer is directed downward; an application solution supply means 30, arranged in the processing room 12 and capable of supplying the application solution 39 to the surface of the wafer as charged particles in the form of mist; and a means 35 for applying an potential opposite to that of the particles to the wafer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成涂膜的方法及其装置，其能够在待处理的基板的粗糙表面之后以均匀的状态形成诸如抗蚀剂膜的涂膜。解决方案：成膜设备向被处理基板的半导体晶片W提供涂层溶液，其表面具有凹凸，在晶片的表面上形成涂膜。该装置包括用于在从外部空气关闭晶片的同时存储晶片的处理室12; 用于向处理室12供给溶剂气体的溶剂气体供给装置1; 卡盘20，布置在处理室12中并且能够可旋转地保持晶片，使得晶片的表面向下指向; 布置在处理室12中并且能够将施加溶液39以雾状的带电粒子供给到晶片表面的施加溶液供给装置30; 以及用于将与颗粒相反的电位施加到晶片的装置35。版权所有（C）2007，JPO＆INPIT

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