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    • 3. 发明专利
    • INTEGRATED-TYPE THIN FILM SOLAR CELL AND ITS MANUFACTURE
    • JPH11126916A
    • 1999-05-11
    • JP29289797
    • 1997-10-24
    • SHARP KK
    • UMEMOTO TETSUMASAKIDOGUCHI SUSUMU
    • H01L31/04H01L27/142H01L31/052
    • PROBLEM TO BE SOLVED: To form a side crystallized contact in an amorphous semiconductor optoelectric transducing layer, by specifying the wavelength of laser beams, in addition to the contact effects of a contact line part which is removed by making a groove. SOLUTION: Laser beams to be used for scribe process are applied from the side of a light transmitting insulating board 1, on which no transparent electrode layer 3 nor amorphous semiconductor optoelectric transducing layer 5 is not stacked, by using the second harmonics (0.660 μm) of a Q-switch oscillation Nd-YLF laser (1.3197 μm), and a scribe groove having a width of 50 μm is formed. When the scribe process is performed with laser beams having a wavelength over 0.60 μm, local thermal processing operation increases and thermal influences are given to the periphery of the processing plane whereupon laser beams are applied. Therefore, a side crystallized contact line 4b is formed in the amorphous semiconductor optoelectric transducing layer by the thermal effects of the patterning line edge side on the amorphous semiconductor optoelectric transducing layer 5.
    • 4. 发明专利
    • MANUFACTURE OF SOLAR BATTERY
    • JPH10303444A
    • 1998-11-13
    • JP10919297
    • 1997-04-25
    • SHARP KK
    • UMEMOTO TETSUMASAKIDOGUCHI SUSUMU
    • B23K26/00H01L31/046H01L31/0463H01L31/04
    • PROBLEM TO BE SOLVED: To perform the processing with accuracy by keeping the focus of a laser beam constant, when performing the screen processing by the laser beam for an integrated solar battery. SOLUTION: A three-layer interface A1 where an insulating substrate 1, a transparent conductive layer 3, and a photoelectric transfer layer 2 on a first scribe line S1 cross, or a two-layer interface A2 vertical to the insulating substrate 1 between the transparent conductive layer 3 and the photoelectric transfer layer 2 on the first scribe line S2 is made the sight of the focus of a laser beam L, when performing the scribe processing to divide and pattern the photoelectric transfer layer 2, by applying a laser beam L toward the photoelectric transfer layer 2 from the side of the insulating substrate 1 from a laser device which has an automatic focus mechanism. The scribe processing is performed while keeping the face to be processed within the processing tolerable depth of the laser beam L, and the first scribe line S1 and the second scribe line S2 are superposed on each other.
    • 7. 发明专利
    • FABRICATION OF THIN FILM SOLAR CELL
    • JPH10242489A
    • 1998-09-11
    • JP4352597
    • 1997-02-27
    • SHARP KK
    • UMEMOTO TETSUMASAKIDOGUCHI SUSUMU
    • H01L31/04H01L31/0224H01L31/18
    • PROBLEM TO BE SOLVED: To perform pattering of a backside reflective electrode layer well using laser light by irradiating the backside reflective electrode layer with the fourth harmonic of Nd-YAG laser light thereby patterning the backside reflective electrode layer. SOLUTION: The fourth harmonic 11 of Nd-YAG laser light is irradiated from the backside reflective metal film layer 8 side. The layer 8 is irradiated normally with the fourth harmonic of a Q switch oscillation Nd-YAG laser. The number of scanning time is only one. Consequently, Ag of the layer 8 and ZnO of a backside transparent conductive layer 7 are removed and a groove 10 for scribing a backside reflective electrode layer 9 is formed. Since the evaporation energy of Ag-Ag is 2.64eV/atom and the energy of the fourth harmonic is 4.66eV, the laser light can unbond and evaporate Ag directly. According to the method, thermal damage on an amorphous semiconductor photoelectric conversion layer 5 can be reduced significantly and patterning can be effected well using laser light.
    • 8. 发明专利
    • INTEGRATED THIN-FILM SOLAR CELL
    • JP2001210851A
    • 2001-08-03
    • JP2000015737
    • 2000-01-25
    • SHARP KK
    • KIDOGUCHI SUSUMUHAYAKAWA HISASHITANIGUCHI HIROSHI
    • H01L31/042H01L31/04
    • PROBLEM TO BE SOLVED: To isolate an upper electrode layer at a high speed and in high yield. SOLUTION: When a splitting groove 14 is formed in a lower electrode layer 12 by the laser scribe method and a substrate is insulated and split, a square groove 15 is formed just beneath a position where an upper electrode layer 19 is insulated and split and a square insulating and isolating area insulated electrically from its periphery is formed. Then, the upper electrode layer 19, a photoelectric conversion layer 16, and the lower electrode layer 12 are simulteneously removed in the intermediate part in the widthwise direction of the insulating and isolating area, by using a laser light, thus forming a splitting groove 21 for insulating and isolating the upper electrode layer 19. Thus, the splitting groove 21 is formed in the insulating and isolating area, thereby giving no damage to such a part that functions as a power generating area in the photoelectric conversion layer 16. Therefore, it is unnecessary to carefully control a laser light not to damage the photoelectric conversion layer 16 or lower electrode layer 12 as in the conventional manner, and the substrate can be treated at a high speed and in high yield.
    • 10. 发明专利
    • LASER BEAM MACHINING DEVICE FOR SUBSTRATE
    • JPH10277772A
    • 1998-10-20
    • JP8398797
    • 1997-04-02
    • SHARP KK
    • UMEMOTO TETSUMASAKIDOGUCHI SUSUMU
    • B23K26/00B23K26/10
    • PROBLEM TO BE SOLVED: To improve reliability and the yield in beam machining by vacuum- sucking an entire substrate to a glazing bar having the same height as a supporting base, after vacuum-sucking and temporarily fixing the periphery of the substrate to the supporting base, and thereby surely correcting the camber/gravitational flexion for maintaining flatness. SOLUTION: The inside of a tube for a peripheral inlet/outlet port 6 is decompressed by a suction/exhaust pump 10 through the port 6 provided in a supporting part 4, so that the four sides in the periphery of a substrate 1 set on a stage 3 are vacuumsucked to the supporting part 4. In addition, the peripheral inlet/outlet port 6 is connected to a peripheral suction/exhaust valve 8 through its tube 61; and, with the valve 8 controlled by the controller, the sucking strength is designed to be arbitrarily adjustable. Further, the entire substrate 1 is fixed on the stage 3 by vacuum-sucking the center of the substrate 1 to a glazing bar 5 by a center inlet/outlet port 7 provided in the center of the stage 3.