专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011187373A Switch, manufacturing method thereof, and relay 有权
标题翻译：开关，其制造方法和继电器
公开(公告)号：JP2011187373A
公开(公告)日：2011-09-22
申请号：JP2010053056
申请日：2010-03-10
申请人： Omron Corp , オムロン株式会社
发明人： HINUMA KENICHI , FUJISAWA TAKASHI , FUJIWARA TAKASHI , MASUDA TAKAHIRO , YOSHITAKE NAOKI , YAMAMOTO JUNYA
IPC分类号： H01H1/06 , H01H11/04 , H01H50/54
CPC分类号： H01H1/0036 , H01H1/06 , H01H3/001 , H01H59/0009 , H01H2001/0078
摘要： PROBLEM TO BE SOLVED: To smoothly form a contact surface of each of contact points, and to make contact resistance smaller between the contact points by surely contacting each of the contact points.
SOLUTION: A fixed-contact section 33 has an adhesion layer 43 and a wiring layer 44 laminated on a fixed-contact substrate 41, and a contact layer 45 is formed thereon. An end surface opposite to the movable-contact section 34 of the contact layer 45 serves as a fixed contact 46 (a contact surface); and the fixed contact 46 is protruded from the wiring layer 44, the adhesion layer 43, and the fixed-contact substrate 41. A movable-contact section 34 has the adhesion layer 53 and the wiring layer 54 laminated on a movable-contact substrate 51, and the contact layer 55 is formed thereon. The end surface opposite to the fixed-contact section 33 of the contact layer 55 serves as a movable contact 56 (the contact surface); and the movable contact 56 is protruded from the wiring layer 54, the adhesion layer 53, and the movable-contact substrate 51. The fixed contact 46 and the movable contact 56 act as the surface in contact with the side of a molding section during the growing process of the contact layers 45, 55 through vapor deposition, sputtering and the like.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了平滑地形成每个接触点的接触表面，并且通过确保接触每个接触点使接触点之间的接触电阻变小。解决方案：固定接触部分33具有层压在固定接触基板41上的粘合层43和布线层44，并且在其上形成接触层45。与接触层45的可动接触部34相反的端面作为固定接点46（接触面）。并且固定触点46从布线层44，粘合层43和固定接触基板41突出。可动接触部34具有层叠在可动接触基板51上的粘合层53和布线层54 ，并且在其上形成接触层55。与接触层55的固定接触部33相反的端面作为可动接点56（接触面）。并且可动触点56从布线层54，粘合层53和可动接触基板51突出。固定触点46和可动触头56在该模制部分的侧面作为与模制部分的侧面接触的表面通过气相沉积，溅射等接触层45,55的生长过程。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011181315A Switch, method for manufacturing the same, and relay 有权
标题翻译：开关，制造方法和继电器
公开(公告)号：JP2011181315A
公开(公告)日：2011-09-15
申请号：JP2010043899
申请日：2010-03-01
申请人： Omron Corp , オムロン株式会社
发明人： MASUDA TAKAHIRO , YOSHITAKE NAOKI , HINUMA KENICHI , YAMAMOTO JUNYA
IPC分类号： H01H49/00 , H01H1/04 , H01H50/54
CPC分类号： H01H1/0036 , H01H1/023 , H01H1/06 , H01H59/0009 , H01H2001/0052 , H01H2001/0078
摘要： PROBLEM TO BE SOLVED: To provide a switch and a relay, including a contact with a smooth contacting surface.
SOLUTION: A side surface of a fixed contact 33 faces a side surface of a movable contact 34. The fixed contact 33 has an insulating layer 43 and a base layer 44 stacked on a fixed contact substrate 41, and a conductive layer 45 formed thereon through electrolytic plating. The side surface of the conductive layer 45 that faces the movable contact 34 becomes a fixed contact 46 (contacting surface). The movable contact 34 has an insulating layer 53 and a base layer 54 stacked on a movable contact substrate 51, and a movable contact 56 formed thereon through electrolytic plating. A side surface of a conductive layer 55 that faces the fixed contact 33 becomes the movable contact 56 (contacting surface). The fixed contact 46 and the movable contact 56 have surfaces that contact the side surfaces of a mold portion, when the conductive layers 45 and 55 are to be grown through electrolytic plating.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种开关和继电器，包括与光滑接触表面的接触。解决方案：固定触点33的侧表面面向可动触点34的侧表面。固定触点33具有堆叠在固定触点基板41上的绝缘层43和基底层44，以及导体层45 通过电解电镀形成在其上。导电层45的面向可动触点34的侧表面成为固定触点46（接触面）。可动触点34具有堆叠在可动触点基板51上的绝缘层53和基底层54以及通过电解电镀形成在其上的可动触点56。导电层55的面向固定触点33的侧表面成为可动触头56（接触面）。当通过电解电镀生长导电层45和55时，固定触头46和可动触头56具有接触模具部分侧表面的表面。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013084689A Wafer bonding method and bonding part structure 有权
标题翻译： WAFER BONDING METHOD AND BONDING PART STRUCTURE
公开(公告)号：JP2013084689A
公开(公告)日：2013-05-09
申请号：JP2011222284
申请日：2011-10-06
申请人： Omron Corp , オムロン株式会社
发明人： FUJIWARA TAKASHI , OKUNO TOSHIAKI , INOUE KATSUYUKI , YAMAMOTO JUNYA , HINUMA KENICHI , ASHIHARA YOSHIKI , MIYACHI TAKAAKI
IPC分类号： H01L21/60 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/05 , B81C1/00269 , B81C2203/019 , H01L21/50 , H01L23/02 , H01L23/10 , H01L24/03 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/065 , H01L25/07 , H01L25/18 , H01L2224/02372 , H01L2224/0401 , H01L2224/05083 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05184 , H01L2224/05548 , H01L2224/06182 , H01L2224/13007 , H01L2224/13022 , H01L2224/1308 , H01L2224/13111 , H01L2224/13144 , H01L2224/13164 , H01L2224/13169 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/14181 , H01L2224/1601 , H01L2224/16058 , H01L2224/16502 , H01L2224/16506 , H01L2224/2908 , H01L2224/29171 , H01L2224/3201 , H01L2224/32058 , H01L2224/32502 , H01L2224/32506 , H01L2224/81193 , H01L2224/81805 , H01L2224/83193 , H01L2224/83805 , H01L2224/94 , H01L2924/01322 , H01L2924/1461 , H01L2924/00012 , H01L2924/0105 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent deterioration in an adhesion layer caused by AuSn in a step of AuSn eutectic bonding of bonding parts of wafers.SOLUTION: On a surface of a wafer 1, an adhesion layer 4 is formed, and above the adhesion layer 4, a diffusion prevention layer 7 made of a material with poor wettability with AuSn is layered on the adhesion layer 4. An adhesive layer 8 is formed on a surface of the diffusion prevention layer 7 so that an edge of the adhesive layer 8 becomes inside an edge of the diffusion prevention layer 7, thus forming a bonding part 3 on the surface of the wafer 1. On the other hand, on undersurface of the wafer 11, a bonding part 13 is provided and below the bonding part 13, an AuSn solder layer 19 is provided. The wafer 1 and the wafer 11 are faced to each other, an AuSn solder layer 19 is fused, and the bonding part 3 and the bonding part 13 are subjected to AuSn eutectic bonding by AuSn solder 22.
摘要翻译：要解决的问题：为了防止在AuSn的共晶接合步骤中由AuSn引起的粘合层的劣化。解决方案：在晶片1的表面上，形成粘合层4，并且在粘合层4上方，在粘合层4上层叠由与AuSn的润湿性差的材料制成的防扩散层7。粘合剂层8形成在扩散防止层7的表面上，使得粘合剂层8的边缘变成在扩散防止层7的边缘内部，从而在晶片1的表面上形成接合部分3。另一方面，在晶片11的下表面上设置有接合部13，并且在接合部13的下方设置有AuSn焊料层19。晶片1和晶片11彼此面对，将AuSn焊料层19熔合，并且通过AuSn焊料22对接合部3和接合部13进行AuSn共晶接合。（C） 2013年，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式