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1. 发明专利

JP2003268595A COPPER ELECTROPLATING METHOD, PHOSPHORUS-CONTAINING COPPER ANODE FOR COPPER ELECTROPLATING, AND SEMICONDUCTOR WAFER WITH MINIMAL PARTICLE ADHESION PLATED BY USING THEM 审中-公开
公开(公告)号：JP2003268595A
公开(公告)日：2003-09-25
申请号：JP2002074659
申请日：2002-03-18
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , OKABE GAKUO
IPC分类号： C25D7/12 , C25D3/38 , C25D17/10 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a copper electroplating method for a semiconductor wafer by which the adhesion of particles generated on the anode side in a plating solution at copper electroplating to a material to be plated such as the semiconductor wafer, can be prevented, a phosphorus-containing copper anode for the copper electroplating, and the semiconductor wafer with minimal particle stuking plated by using them. SOLUTION: In the copper electroplating method using a phosphorus- containing copper anode, the phosphorus-containing copper anode having >1,500 to 20,000 μm grain size is used. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003073889A Electrolytic copper plating method for semiconductor wafer, apparatus therefor and semiconductor wafer plated by using these and having little adhering particle 审中-公开
标题翻译：用于半导体滤波器的电解铜镀层方法，其设备和使用这些并具有小颗粒的颗粒的半导体晶片
公开(公告)号：JP2003073889A
公开(公告)日：2003-03-12
申请号：JP2001259001
申请日：2001-08-29
申请人： Nikko Materials Co Ltd , 株式会社日鉱マテリアルズ
发明人： AIBA TAMAHIRO , SEKIGUCHI JIYUNNOSUKE , SHINDO YUICHIRO
IPC分类号： C25D7/12 , C25D17/00 , C25D21/18 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for electrolytic copper plating on a semiconductor wafer, which restrains generation of particles such as sludge occurring on an anode side in a plating solution, and prevents the particles from adhering to a semiconductor wafer, when performing electrolytic copper plating, and provide a semiconductor wafer device which is electrolytically copper plated by using these and has little adhering particles.
SOLUTION: The electrolytic copper plating method for the semiconductor wafer is characterized by dividing a plating tank into a cathode chamber and an anode chamber while separating them with an anion-exchange membrane, and performing electrolytic copper plating by using an insoluble anode as the anode, when electrolytic copper plating the semiconductor wafer.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供一种在半导体晶片上进行电解镀铜的方法和装置，其抑制在电镀液中阳极侧发生的污泥等颗粒的产生，防止颗粒附着在半导体晶片上，在进行电解铜电镀的同时，提供利用这些电镀铜电镀铜并且附着粒子少的半导体晶片装置。解决方案：半导体晶片的电解镀铜方法的特征在于，将镀槽分为阴极室和阳极室，同时用阴离子交换膜分离，并通过使用不溶性阳极作为阳极进行电解镀铜，当电解铜电镀半导体晶片时。

3. 发明专利

JP2004043916A Process and apparatus for plating and wafer with few pit defect 审中-公开
标题翻译：具有很少凹痕缺陷的镀层和方法的工艺和装置
公开(公告)号：JP2004043916A
公开(公告)日：2004-02-12
申请号：JP2002205023
申请日：2002-07-15
申请人： Nikko Materials Co Ltd , 株式会社日鉱マテリアルズ
发明人： AIBA TAMAHIRO , OKABE GAKUO
IPC分类号： C23C18/16 , C23C18/31 , C25D7/12 , C25D17/00 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating process which promotes removal of microbubbles from a wafer, inhibits pit defects, prevents malfunction of a device, etc. and improves production yield when forming wiring on the semiconductor wafer through electroplating or electroless plating, and the semiconductor wafer with few pit defect.
SOLUTION: The plating process is for forming the wiring on the semiconductor wafer, etc. wherein plating is performed in a plating tank which is depressurized to below atmospheric pressure. In the process and a plating apparatus, the plating tank is depressurized by sealing the tank and exhausting the space in the upper part of the tank using a vacuum pump.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种促进从晶片去除微泡的电镀工艺，抑制凹坑缺陷，防止器件的故障等，并且通过电镀或无电镀在半导体晶片上形成布线时提高生产成本，以及缺陷少的半导体晶片。解决方案：电镀工艺用于在半导体晶片等上形成布线，其中在被减压到低于大气压的电镀槽中进行电镀。在该过程和电镀装置中，通过密封罐并使用真空泵排出罐的上部的空间来对镀槽进行减压。版权所有（C）2004，JPO

4. 发明专利

JP2003129295A COPPER-ELECTROPLATING PROCESS, PHOSPHORUS-CONTAINING COPPER ANODE FOR THE PROCESS, AND SEMICONDUCTOR WAFER WITH LITTLE PARTICLE ATTACHMENT PLATED BY USING THESE 审中-公开
公开(公告)号：JP2003129295A
公开(公告)日：2003-05-08
申请号：JP2001323265
申请日：2001-10-22
申请人： NIKKO MATERIALS CO LTD
发明人： OKABE GAKUO , AIBA TAMAHIRO , SEKIGUCHI JIYUNNOSUKE , MIYASHITA HIROHITO , SAWAMURA ICHIRO
IPC分类号： B22D25/04 , C22C9/00 , C25D7/12 , C25D17/10 , C25D21/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a copper-electroplating process for a semiconductor wafer that inhibits the generation of particles such as sludge, which are generated at the anode side in a plating solution at copper-electroplating and prevents the attachment of particles to the semiconductor wafer, a phosphorus-containing copper anode for copper-electroplating and a semiconductor wafer with little particle attachment plated by using these. SOLUTION: When performing copper-electroplating, a phosphorus-containing copper is used as an anode. When the current density at the anode at electrolysis is >=3 A/dm , the crystal grain size of the phosphorus-containing copper anode should be from 10 to 1,500 μm. When the current density at the anode at electrolysis is , the crystal grain size of the phosphorus-containing copper anode should be from 5 to 1,500 μm.

5. 发明专利

JP2003231995A PHOSPHOR-CONTAINING COPPER ANODE FOR COPPER ELECTROPLATING, COPPER ELECTROPLATING METHOD USING PHOSPHOR-CONTAINING COPPER ANODE, AND SEMICONDUCTOR WAFER PLATED BY USING THEM WITH FEW ADHERING PARTICLES 审中-公开
公开(公告)号：JP2003231995A
公开(公告)日：2003-08-19
申请号：JP2002035125
申请日：2002-02-13
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , OKABE GAKUO , HIDA YUKIHIKO , MIYATA CHIE
IPC分类号： C25D7/12 , C22C9/00 , C25D17/10 , H01L21/28 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a phosphor-containing copper anode for copper electroplating, which inhibits generation of the particles such as sludge formed in an anode side in a plating solution, and prevents adhesion of particles to a semiconductor wafer, in a copper electroplating process, and to provide a copper electroplating method using the phosphor-containing copper anode, a semiconductor wafer plated by using them with few adhering particles, and a method for manufacturing the phosphor-containing copper anode for copper electroplating. SOLUTION: The phosphor-containing copper anode for electroplating copper comprises using phosphor-containing copper, and having a micro diamond pyramid hardness of 40 or higher. The copper electroplating method is characterized by using the phosphor-containing copper anode. The semiconductor wafer with few adhering particles is plated by using them. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2003213498A ANODE FOR COPPER ELECTROPLATING, METHOD OF MANUFACTURING THIS ANODE, COPPER ELECTROPLATING METHOD USING THIS ANODE AND OBJECT TO BE PLATED WHICH IS PLATED BY USING THE SAME AND IS LESS STUCK WITH PARTICLES 审中-公开
公开(公告)号：JP2003213498A
公开(公告)日：2003-07-30
申请号：JP2002007005
申请日：2002-01-16
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , SUZUKI SATORU , OKABE GAKUO , SEKIGUCHI JIYUNNOSUKE
IPC分类号： C25D7/12 , C22C9/00 , C25D17/10
摘要： PROBLEM TO BE SOLVED: To provide an anode for copper electroplating which suppresses the generation of particles, such as sludge, produced on the anode side in a plating solution is less stuck with particles to semiconductor wafers, etc., in performing copper electroplating, a method of manufacturing this anode, a copper electroplating method using this anode and an object to be plated which is plated by using these and is less stuck with the particles. SOLUTION: The anode for copper electroplating contains the oxygen or sulfur obtained by sintering copper powder, copper grains or copper pieces having an oxide layer, or nitride layer of ≥3 Å or both of these layers or a mixed layer composed thereof on the surfaces or both thereof at ≥5 ppm. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2002275678A WHISKER-FREE TIN AND TIN ALLOY PLATING SOLUTION, PRINTING FILM AND PLATING OBJECT 失效
公开(公告)号：JP2002275678A
公开(公告)日：2002-09-25
申请号：JP2001057139
申请日：2001-03-01
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , KUMAGAI MASASHI
IPC分类号： C25D3/32 , C25D3/60
摘要： PROBLEM TO BE SOLVED: To prepare a tin plating solution or tin alloy plating solution which obviates the generation of whiskers even if an object to be plated is not subjected to heat treatment. SOLUTION: The tin plating solution or tin alloy plating solution contains, as additives, at least one kind selected from the group consisting of a bisphenol A ethylene oxide adduct, bisphenol A propylene oxide adduct, bisphenol F ethylene oxide adduct and bisphenol F propylene oxide adduct. The tin or tin alloy plating film which obviates the generation of the whiskers for >=1 year is obtained by these additives even if the plating solution is not subjected to the heat treatment.

8. 发明专利

JP2001049485A BLACK RUTHENIUM PLATING SOLUTION 失效
公开(公告)号：JP2001049485A
公开(公告)日：2001-02-20
申请号：JP21968499
申请日：1999-08-03
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , MIMURA TOMOHARU , OKUBO RIICHI
IPC分类号： C25D3/50
摘要： PROBLEM TO BE SOLVED: To suppress the decomposition of a thio compd. to be added as a color developing agent caused by anodic oxidation in the process of electrolysis by allowing the soln. to contain ruthenium sulfate, sulfamic acid, a thio compd. and a sacrificial oxidizer added for preventing the decomposition of the thio compd. caused by anodic oxidation in the process of electrolysis. SOLUTION: Preferably, the sacrificial oxidizer is selected from hydroxylamine sulfate, formalin and ascorbic acid, and the thio compd. is selected from thiourea, a thiourea derivative, a compd. having a marcapto group, thiomalic acid and ammonium thiocyanate. The concn. of ruthenium is desirable controlled to 1 to 10 g/L considering the current efficiency, plating time and the loss of ruthenium caused, e.g. by the cleaning of electrodeposite in the process of the treatment. The concn. of the thio compd. is preferably controlled to 0.1-10.0 g/L. In the black ruthenium plating soln., pH is preferably controlled to =40 deg.C.

9. 发明专利

JP2002146522A SPUTTERING TARGET MADE OF COPPER OR COPPER ALLOY WHERE OXIDATION DISCOLORATION INHIBITOR IS APPLIED AND TREATMENT METHOD THEREFOR 失效
公开(公告)号：JP2002146522A
公开(公告)日：2002-05-22
申请号：JP2001059962
申请日：2001-03-05
申请人： NIKKO MATERIALS CO LTD
发明人： MIYASHITA HIROHITO , AIBA TAMAHIRO , OSADA KENICHI , FUKUTANI TAKASHI
IPC分类号： C23C14/34 , C23F11/14 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target made of copper and a copper alloy in which the periods of carrying and preservation are prolonged, and which is usable in a highly clean atmosphere in a sputtering process. SOLUTION: In this sputtering target made of copper or a copper alloy, an oxidation discoloration inhibitor composed of an azole based compound such as benzotriazole or the derivative thereof or imidazolesilane is applied.

10. 发明专利

JP2005179765A Surface treatment agent for copper and copper alloy 审中-公开
标题翻译：铜和铜合金表面处理剂
公开(公告)号：JP2005179765A
公开(公告)日：2005-07-07
申请号：JP2003426423
申请日：2003-12-24
申请人： Nikko Materials Co Ltd , 株式会社日鉱マテリアルズ
发明人： AIBA TAMAHIRO , KAWAMURA KAZUMI , HISUMI YOSHIYUKI
IPC分类号： C23F11/00 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment agent for copper and copper alloys having high heat resistance, excellent solder wettability and excellent selective adsorbability.
SOLUTION: The surface treatment agent for copper and copper alloys comprises: (A) an imidazole derivative expressed by the general formula; (B) a metallic compound composed of zinc, tin, iron, nickel and a cobalt compound; (C) ≤3C carboxylic acid; (D) 5 to 12C carboxylic acid; and (E) an iodine compound. In the general formula, at least one selected from R1 to R3 is a ≥6C alkyl group, alkenyl group, alkynyl group, aryl group, aralkyl group or a group obtained by adding a halogen atom to them, and the balance hydrogen atom, methyl group, ethyl group, propyl group and halogen atom.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高耐热性，优异的焊料润湿性和优异的选择性吸附性的铜和铜合金的表面处理剂。解决方案：铜和铜合金的表面处理剂包括：（A）由通式表示的咪唑衍生物; （B）由锌，锡，铁，镍和钴化合物构成的金属化合物; （C）≤3C羧酸; （D）5〜12℃羧酸; 和（E）碘化合物。在通式中，选自R 1至R 3中的至少一个为≥6C烷基，烯基，炔基，芳基，芳烷基或通过向其中加入卤素原子得到的基团，余量为氢原子，甲基基，乙基，丙基和卤原子。版权所有（C）2005，JPO＆NCIPI

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