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1. 发明专利

JP2006100780A Method and apparatus for evaluating semiconductor device 有权
标题翻译：用于评估半导体器件的方法和装置
公开(公告)号：JP2006100780A
公开(公告)日：2006-04-13
申请号：JP2005161639
申请日：2005-06-01
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKADA KENJI
IPC分类号： H01L21/66 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus which enable the evaluation of the thickness of the lower insulating film easily and preciously in semiconductor devices using a laminated insulating film formed by a laminate of two or more insulating films as a gate insulating film. SOLUTION: Gate voltage sweep takes place on a semiconductor device with a laminated insulating film for which the thickness of the lower insulating film is to be measured (step S11). A low voltage peak current mode is found from the current-voltage characteristic obtained by this sweep to determine the peak voltage and peak current (step S12). Then, the thickness of the lower insulating film is obtained from the correlation between the determined and predetermined peak voltages and the lower insulating film thickness (step S13). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种方法和装置，其能够使用由两个或更多个绝缘膜的叠层形成的层叠绝缘膜作为栅极，在半导体器件中容易且珍贵地评估下绝缘膜的厚度绝缘膜。解决方案：在具有要测量下绝缘膜的厚度的层压绝缘膜的半导体器件上进行栅极电压扫描（步骤S11）。从通过该扫描获得的电流 - 电压特性可以发现低电压峰值电流模式，以确定峰值电压和峰值电流（步骤S12）。然后，根据确定的和预定的峰值电压之间的相关性和较低的绝缘膜厚度获得下部绝缘膜的厚度（步骤S13）。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2003215133A DISC FOR ANALYZING SAMPLE AND SAMPLE ANALYZER 审中-公开
公开(公告)号：JP2003215133A
公开(公告)日：2003-07-30
申请号：JP2002016261
申请日：2002-01-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , MURAKAMI KENJI
IPC分类号： G01N33/48 , B01D17/038 , B01L3/00 , G01N33/483 , G01N35/00 , G01N35/02 , G01N35/04
摘要： PROBLEM TO BE SOLVED: To provide a thin disc for analyzing sample and a sample analyzer capable of preventing a sample from scattering or the like. SOLUTION: This disc 1 for analyzing sample which has a passage 6 extending from an injection hole 5 to the outer side and is rotated around the axis by an outer rotating means to lead a liquid sample injected from the injection hole 5 to the passage 6 to the outer side through a reagent part 7 disposed in the midway of the passage, is constituted so that an absorbing member 8 is disposed at the peripheral end part 6a of the passage 6. Since liquid sample which is reached at the peripheral end part 6a by centrifugal force due to the rotation is absorbed to the absorbing member 8, the liquid sample does not flow backward and scatter. Since the collecting of the direction of gravity is not required, the disc can be made small in thickness. COPYRIGHT: (C)2003,JPO

3. 发明专利

JPH07153934A RESONANCE TUNNEL CONSTRUCTION AND MANUFACTURE OF IT 失效
公开(公告)号：JPH07153934A
公开(公告)日：1995-06-16
申请号：JP29928093
申请日：1993-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI
IPC分类号： H01L29/68 , H01L21/338 , H01L29/812
摘要： PURPOSE:To improve the ununiformity of a second tunnel oxide film by making a resonance tunnel layer of conductive islandlike single crystal grains between two tunnel barriers, and insulating each the single crystal grain with insulator. CONSTITUTION:A first polycrystalline silicon 4 is composed of a first single crystal grain 11, a second single crystal grain 12, and a crystal grain boundary 13. Since the crystal grain boundary 13 is quicker in diffusion of oxidation seeds compared to the part of single crystal powder, the upper parts of the single crystal grains are oxidized and the part of the crystal grain boundary 13 is oxidized too, and a wedgelike thermal oxide film 7 is formed. If the thermal oxidation is continued further. The oxide film in the grain boundary reaches to a first tunnel oxide film 3, and the first and second single crystal grain parts 11 and 12 are completely separated by the oxide film in the grain boundary. After the removal of the thermal oxide film 7, a second tunnel oxide film (tunnel barrier) 5 is formed by thermal oxidation. Accordingly, it becomes possible to improve the ununiformity of the second tunnel oxide film 5 caused by the difference of the oxidation speed of the single crystal grains having different crystal orientation.

4. 发明专利

JPH06252415A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06252415A
公开(公告)日：1994-09-09
申请号：JP3597293
申请日：1993-02-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAI YOSHIHIKO , MORIMOTO TADASHI , YUKI KOICHIRO , YASUI JURO , OKADA KENJI
IPC分类号： H01L21/20 , H01L21/308 , H01L29/06 , H01L29/66 , H01L29/80 , H01L29/804
摘要： PURPOSE:To shut out the leak current flowing through a silicon substrate from the structure containing a conduction channel or a quantum line in a quantization functional element or various kinds of elements. CONSTITUTION:The first silicon oxide film 17, surrounding the prescribed region is formed on a silicon substrate 11, and a source 13 and a drain 14 are formed on a quantum wire 16 and both ends of the above-mentioned region. Then, a part of the silicon substrate 11, which comes in contact with one of the source 13 and the drain 14 or both of them, is removed by etching, and the silicon substrate and the silicon oxide film are left without etching by utilizing the difference in etching rate between the silicon substrate and a p-type impurity doped silicon layer. As a result, a leak current can be shut off through the intermediary of the silicon substrate 11 which comes in contact with the source 13 and the drain 14.

5. 发明专利

JPH0621434A MANUFACTURE OF QUANTUM ELEMENT 失效
公开(公告)号：JPH0621434A
公开(公告)日：1994-01-28
申请号：JP17659792
申请日：1992-07-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , MORIMOTO TADASHI , YUKI KOICHIRO , UDAGAWA SHOJI , HIRAI YOSHIHIKO , NIWA MASAAKI , YASUI JURO
IPC分类号： H01L29/06 , H01L21/334 , H01L29/10 , H01L29/68 , H01L29/772 , H01L29/88
摘要： PURPOSE:To easily manufacture a quantum element with dimensions enough for obtaining quantum effect by embedding a conductor around a plate-shaped conductor and an insulation film. CONSTITUTION:A resist 41 with a thin shape which is 30nm wide is formed on a silicon substrate 40. Then, a part which is not covered with resist of the silicon substrate 40 is etched nearly vertically, thus forming a plate-shaped silicon 42. Then, the resist 41 is eliminated. Then, thermal oxidation is performed and then a thermal oxidation film 43 which is 2nm thick is formed around the plate-shaped silicon 42. Finally, a single-crystal silicon 44 is formed before flattening. In this manner, single-crystal silicon- 2nm tunnel oxide film - 30nm thick silicon (substrate)- 2nm tunnel oxide film - single-crystal structure are formed, thus manufacturing a quantum element with dimensions enough for obtaining a resonance tunnel effect.

6. 发明专利

JPH05315597A QUANTUM ELEMENT 失效
公开(公告)号：JPH05315597A
公开(公告)日：1993-11-26
申请号：JP11868692
申请日：1992-05-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , MORIMOTO TADASHI , UDAGAWA SHOJI , YUKI KOICHIRO , NIWA MASAAKI , HIRAI YOSHIHIKO , YASUI JURO
IPC分类号： H01L29/66 , H01L29/06 , H01L29/12
摘要： PURPOSE:To provide a quantum element where quantum elements which are small enough in dimensions for having a quantum effect and different from each other in quantization trapping axis are connected together as being kept in a quantized state. CONSTITUTION:Electrons as output signals emitted from a quantum element of a preceding stage are made to move in a first quantum fine wiring 1 along a first traveling direction 5. The electrons reaching dot 9. That electrons are reflected or transmitted depends on a quantum state in the quantum dot 9 and the first quantum fine wiring 1. In the quantum dot 9, the first trapping directions 3 of the first quantum fine wiring 1 and the first traveling direction 5 or these three axes are quantized, and as the dimensions of the quantum dot 9 in the first trapping directions 3 are coincident with those of the first quantum fine wiring 1, electrons whose quantum level in the first traveling direction 5 is coincident with a quantum level in the quantum dot 9 are transmitted into the quantum dot 9.

7. 发明专利

JPH05193788A PAPER SHEET CONVEYANCE CORRECTING DEVICE 失效
公开(公告)号：JPH05193788A
公开(公告)日：1993-08-03
申请号：JP822292
申请日：1992-01-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , YADA AKINARI
IPC分类号： B65H5/06 , B65H9/00 , G03G15/00
摘要： PURPOSE:To perform reasonable correction of the position of a paper sheet during its conveyance by moving at least two sets of roller pair, adjoining to each other, in a direction perpendicular to a paper sheet conveying direction, in a paper sheet conveyance correcting device used in an image forming device, etc. CONSTITUTION:Register rollers 2a and 2b and conveyance rollers 3a and 3b are held in suck a manner as interlocking with a frame 1. The frame 1 is provided with a rack part 14, which is geared with the gear of a motor 9. The reference displacement of a paper sheet 19 is detected by arranging sensors 10a and 10b on downstream side of the conveyance rollers 3a and 3b, the motor 9 is run by means of a signal from a motor control circuit so as to correct the position of the paper sheet 19.

8. 发明专利

JPH05110063A QUANTUM ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05110063A
公开(公告)日：1993-04-30
申请号：JP27082491
申请日：1991-10-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To enable elements to be provided high in density by a method wherein ridges and troughs are provided onto a silicon substrate taking advantage of anisotropic etching of silicon crystal. CONSTITUTION:A single crystal silicon 22, a silicon oxide 11, and a silicon substrate 10 are anisotropically etched using a silicon oxide film 12 formed on the silicon substrate 10 as a mask. In the result, a ridge structure having a (111) plane is formed. Then, a thermal oxidation treatment is executed for the formation of a thermal oxide film 13. A polysilicon 14 is deposited and etched back as high as prescribed, and furthermore a thermal oxidation treatment is carried out for forming a thermal oxide film 15. Then, the thermal oxide film 15 is removed only from the ridge. In succession, a thermal oxidation treatment is executed, a gate oxide film 16 is formed, and only the gate oxide film located on a drain region is removed. Furthermore, a polysilicon 23 is deposited and etched for forming a gate electrode 17 and a node 24, and the gate electrode 17 and the node 24 are connected to a drain region 20.

9. 发明专利

JPH0575106A QUANTUM ELEMENT 失效
公开(公告)号：JPH0575106A
公开(公告)日：1993-03-26
申请号：JP23280891
申请日：1991-09-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WADA ATSUO , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , OKADA KENJI , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/68
摘要： PURPOSE:To realize a transistor having an extremely large S/N ratio. CONSTITUTION:A resonance tunnel effect is generated through potential barriers 21 and 22 by controlling energy relative positions of a quantum level generated at a quantum dot 12 and a quantum level generated at first and second quantum fine wires 11 and 13 by applying a voltage to an electrode 31, and a current flows from the first quantum fine wire to the second fine quantum wire. Accordingly, since the quantum level generated at the dot 12 has very small energy dispersion, a leakage current is extremely small and hence an S/N ratio becomes extremely large.

10. 发明专利

JPH0575105A MANUFACTURE OF QUANTUM ELEMENT 失效
公开(公告)号：JPH0575105A
公开(公告)日：1993-03-26
申请号：JP23280491
申请日：1991-09-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/68
摘要： PURPOSE:To easily form an element having small electron scattering by a quantum fine wire by implanting oxygen ions to a predetermined region of a thin silicon film on a single crystalline silicon substrate formed on an insulating film by a convergent ion beam to form a silicon oxide, and etching the thin silicon film in a predetermined shape. CONSTITUTION:A silicon oxide film 2 and a single crystalline silicon film 3 are sequentially formed on a silicon substrate 1. Oxygen ions are implanted to a predetermined region of the silicon film 3 by an ion beam 4 thereby to form a silicon oxide 5. Then, after a resist 6 is formed in a predetermined shape, a predetermined region of the film 3 is removed by dry etching. Thereafter, the resist 6 is removed thereby to obtain a fine quantum wire 7 and quantum dots 8. Since the film 3 having excellent crystallinity is used in this manner, the obtained wire 7 and dots 8 have small electron scattering and excellent mobility.

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