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1. 发明专利

JP2004292877A Silicon nitride film and method for manufacturing the same 有权
公开(公告)号：JP2004292877A
公开(公告)日：2004-10-21
申请号：JP2003085721
申请日：2003-03-26
申请人： Ishikawa Pref Gov , Ishikawa Seisakusho Ltd , Japan Advanced Inst Of Science & Technology Hokuriku , Japan Science & Technology Agency , Toshiichi Niki , 敏一仁木 , 北陸先端科学技術大学院大学長 , 株式会社石川製作所 , 独立行政法人科学技術振興機構 , 石川県
发明人： NAMIKAWA TOSHIHARU , BUKE AKIRA , KOIZUMI AKIO , MUROI SUSUMU , MASUDA ATSUSHI , UMEMOTO HIRONOBU , MATSUMURA HIDEKI , NIKI TOSHIICHI
IPC分类号： B32B9/00 , C01B21/06 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film which has a high barrier property, transparency and an excellent adhesion property and a manufacturing method for high-speed deposition at a low temperature.
SOLUTION: The silicon nitride film is deposited by a chemical vapor deposition method, more particularly a catalytic CVD method. The film is deposited at a substrate temperature ≤160°C and the composition thereof, when expressed as SiN
x , is 1.05≤x≤1.33, the refractive index is 1.8 to 1.96. NH bonds exist in the film. At the time of the deposition, monosilane, ammonia and hydrogen are supplied, are catalytically decomposed by an electrically heated wire and are deposited on a substrate of ≤160°C. At this time, the flow rate ratios of the monosilane, the ammonia and the hydrogen are so specified that the ammonia is 1 to 30, and the hydrogen is 5 to 400 to 1 monosilane.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2006005066A Method and apparatus for depositing 有权
标题翻译：沉积方法和装置
公开(公告)号：JP2006005066A
公开(公告)日：2006-01-05
申请号：JP2004178235
申请日：2004-06-16
申请人： Ishikawa Seisakusho Ltd , Japan Science & Technology Agency , Toshiichi Niki , 敏一仁木 , 株式会社石川製作所 , 独立行政法人科学技術振興機構
发明人： MUROI SUSUMU , NIKI TOSHIICHI
IPC分类号： H01L21/318 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To aim at the coexistence with the suppressing of the temperature rise of the material to be deposited and high speed film depositing.
SOLUTION: A positioning apparatus forms a thin film on the material 3 to be deposited installed in a vacuum container 2. The positioning apparatus includes a catalytic element 5 for activating the part of a material gas, a first gas supply means 6 for introducing the part of the material gas to be contacted with the catalytic element 5, and a second gas supply means 7 for introducing directly the part of the material gas to a space between the catalytic element and the material to be deposited. At least the part of the material gas is activated by the catalytic element 5. The residual material gas is activated by the activated material gas to depositing species, and a thin film is deposited on the material 4 to be deposited.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：旨在与待沉积的材料的温度升高的抑制和高速膜沉积共存。解决方案：定位装置在要沉积的材料3上形成薄膜，安装在真空容器2中。定位装置包括用于启动材料气体的一部分的催化元件5，第一气体供应装置6，引入与催化元件5接触的材料气体的一部分;以及第二气体供给装置7，用于将材料气体的一部分直接引入催化元件和待沉积材料之间的空间。至少部分原料气体被催化元件5活化。剩余的原料气体被活性物质气体活化以沉积物质，并且薄膜沉积在待沉积的材料4上。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2006057121A Method for producing silicon nitride film, and film for display device 有权
标题翻译：用于生产氮化硅薄膜的方法和用于显示装置的薄膜
公开(公告)号：JP2006057121A
公开(公告)日：2006-03-02
申请号：JP2004238090
申请日：2004-08-18
申请人： Ishikawa Pref Gov , Ishikawa Seisakusho Ltd , Japan Science & Technology Agency , Kuraray Co Ltd , 株式会社クラレ , 株式会社石川製作所 , 独立行政法人科学技術振興機構 , 石川県
发明人： IGARI TOKUO , NAMIKAWA TOSHIHARU , BUKE AKIRA , MUROI SUSUMU
IPC分类号： C23C16/452 , B32B9/00 , C23C16/34 , H01L51/50 , H05B33/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride film superior in a gas barrier property, at a low temperature.
SOLUTION: The method for producing the silicon nitride film comprises: a decompression step of decompressing the inside of a vacuum chamber 2 into a vacuum state, which has a plastic film 15 arranged on a coolable substrate holder 4 and a heatable tungsten wire 6 arranged above the plastic film 15 therein, with a pressure reducing device 3; a gas introduction step of introducing a silane gas, ammonia gas and hydrogen gas into the vacuum chamber 2 which has been decompressed in the decompression step, with a shower head 5; a gas decomposition step of contacting the gases introduced into the vacuum chamber 2 in the gas introduction step, with the tungsten wire 6 while heating the tungsten wire 6, to decompose the gases; and a film-forming step of forming the silicon nitride film on the surface of the plastic film 15, by depositing the decomposed species of the gas obtained in the gas decomposition step, on the surface of the plastic film 15 while cooling the substrate holder 4.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种在低温下制造阻气性优异的氮化硅膜的方法。解决方案：用于制造氮化硅膜的方法包括：减压步骤，将真空室2的内部减压成真空状态，其具有设置在可冷却的基板保持件4上的塑料膜15和可加热的钨丝 6，其上设置有塑料膜15，具有减压装置3; 气体引入步骤，用于在喷淋头5中将硅烷气体，氨气和氢气引入到在减压步骤中减压的真空室2中; 气体分解步骤，在气体引入步骤中将导入真空室2的气体与钨丝6同时加热钨丝6，分解气体; 以及通过在气体分解步骤中获得的气体的分解物质沉积在塑料膜15的表面上同时冷却基板保持件4而在塑料膜15的表面上形成氮化硅膜的成膜步骤（C）2006年，JPO＆NCIPI

4. 发明专利

JP2013047128A Aligning and conveying device for workpiece 有权
标题翻译：用于工作的对准和输送装置
公开(公告)号：JP2013047128A
公开(公告)日：2013-03-07
申请号：JP2011185630
申请日：2011-08-29
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所 , Eiko Sangyo Kk , 英光産業株式会社
发明人： MUROI SUSUMU , ASAO YOSHIJI , SATAKE YASUSHI , YAMAGISHI YOSHIKO
IPC分类号： B65G47/14
摘要： PROBLEM TO BE SOLVED: To provide an aligning and conveying device for a workpiece, preventing the workpiece from being damaged and allowing high-speed conveyance with a stable posture by eliminating a level difference or a gap of a seam part of a conveyance path (conveyance surface).SOLUTION: This aligning and conveying device 1 for the workpiece comprises: a rotary feeder 90 on which a workpiece transfer surface is formed and which horizontally rotates; and a linear feeder 70 on which a workpiece conveyance surface is formed and which includes a plurality of horizontally rotating conveyance disks D8, for supplying the workpiece from the transfer path to the next process. The workpiece conveyance path is handed over from a circular arc alignment wall G performing the partitioning so that the transfer surface becomes an independent workpiece conveyance path on the rotary feeder 90 to a linear alignment wall J performing the partitioning so that the conveyance surface becomes an independent workpiece conveyance path on the linear feeder 70. Outer circumferential edges of the respective conveyance disks D8 are partially overlapped so that the conveyance disk is positioned upward at the upstream side and downward at the downstream side. A level difference between the outer circumferential edges is ≤0.1 mm.
摘要翻译：要解决的问题：为了提供工件的对准和输送装置，通过消除输送装置的接缝部分的水平差或间隙，防止工件被损坏并且以稳定的姿势允许高速输送路径（输送面）。解决方案：用于工件的该对准和输送装置1包括：旋转进给器90，其上形成有工件传送表面并水平旋转的旋转进给器90; 以及其上形成有工件传送表面并且包括多个水平旋转的传送盘D8的线性进给器70，用于将工件从传送路径提供到下一个处理。工件输送路径从进行分割的圆弧对准壁G切换，使得转印面成为旋转进给器90上的独立的工件输送路径，进行到进行分割的直线对准壁J，使得输送面成为独立工件输送路径在线性进给器70.各输送盘D8的外圆周边缘部分重叠，使得输送盘位于上游侧的上方，下游侧位于下方。外周缘之间的水平差≤0.1mm。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013023296A Aligning and conveying device of workpiece and appearance inspection device of workpiece 审中-公开
标题翻译：工件和工件的外观检查装置的排列和传送装置
公开(公告)号：JP2013023296A
公开(公告)日：2013-02-04
申请号：JP2011156520
申请日：2011-07-15
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所 , Eiko Sangyo Kk , 英光産業株式会社
发明人： MUROI SUSUMU , ASAO YOSHIJI , SATAKE YASUSHI , YAMAGISHI YOSHIKO
IPC分类号： B65G47/14
摘要： PROBLEM TO BE SOLVED: To provide an aligning and conveying device of a workpiece capable of conveying the workpiece at a speed substantially higher than before and inspecting an appearance.SOLUTION: The aligning and conveying device of the workpiece uses a rotary type feeder which includes a disk D1 for feed, disks F1 and F2 for transfer, and a disk D2 for alignment with a flange part formed with a transfer surface serving as a transfer path of the workpiece 20 near the outer circumferential of the disk D1 for feed, rakes up the workpiece 20 fed to a recessed inner peripheral surface of a recessed part formed on the disk D1 for the feed by the disks F1 and F2 for transfer, and transfers it to the transfer surface of the flange part. A guide plate G for sectioning the transfer surface of the flange part into an inner peripheral side and an outer circumferential side is arranged closely on the transfer surface of the flange part, and aligning and conveying are performed in a plurality of columns while being sectioned into an inner peripheral side transfer path and an outer circumferential side transfer path by the guide plate G.
摘要翻译：要解决的问题：提供能够以比以前大得多的速度输送工件并检查外观的工件的对准和输送装置。
解决方案：工件的对准和传送装置使用旋转式给料器，其包括用于进给的盘D1，用于转移的盘F1和F2以及用于与形成有转印面的凸缘部对准的盘D2 工件20在盘D1的外圆周附近的传送路径，供给到进给到盘D1上的凹部的凹部的内周面的工件20，供进给盘F1和F2用于传送并将其传送到凸缘部分的转印表面。用于将凸缘部分的转印面分割成内周侧和外周侧的引导板G紧密地布置在凸缘部分的转印表面上，并且在多个列中进行对准和输送，同时被分割成通过引导板G的内周侧传送路径和外周侧传送路径。（C）2013，JPO＆INPIT

6. 发明专利

JP2007211295A Film deposition unit having film deposition apparatus, and film deposition method using the film deposition unit 审中-公开
标题翻译：具有薄膜沉积装置的薄膜沉积单元和使用薄膜沉积单元的薄膜沉积方法
公开(公告)号：JP2007211295A
公开(公告)日：2007-08-23
申请号：JP2006032721
申请日：2006-02-09
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所
发明人： MUROI SUSUMU , NIKI TOSHIICHI
IPC分类号： C23C14/00 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To considerably reduce the amount of dust in a film deposition chamber of a film deposition apparatus in a space-saving manner at low cost.
SOLUTION: A film deposition unit comprises a film deposition apparatus 10 for depositing a thin film on a material for film deposition in a film deposition chamber 11, a clean chamber 20 communicating with the film deposition chamber 11. An inlet 21 capable of introducing air therefrom is formed in the clean chamber 20, and an outlet 14 capable of discharging air is formed in the film deposition chamber 11.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：以低成本，以节省空间的方式大大减少了成膜装置的成膜室中的粉尘量。解决方案：膜沉积单元包括用于在成膜室11中的薄膜沉积材料上沉积薄膜的成膜装置10，与成膜室11连通的清洁室20。在清洁室20内形成有空气，在成膜室11内形成能够排出空气的出口14.（C）2007，JPO＆INPIT

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