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    • 3. 发明专利
    • Nonvolatile memory device
    • 非易失性存储器件
    • JP2006048930A
    • 2006-02-16
    • JP2005310935
    • 2005-10-26
    • Hitachi Ulsi Systems Co LtdRenesas Technology Corp株式会社ルネサステクノロジ株式会社日立超エル・エス・アイ・システムズ
    • SEKI KOICHIWADA TAKESHIMUTO TADASHIKUBOTA YASUROSHOJI KAZUYOSHI
    • G11C16/02
    • PROBLEM TO BE SOLVED: To provide a nonvolatile memory device improved in operability. SOLUTION: The nonvolatile memory device has a nonvolatile memory array in which a plurality of nonvolatile memory cells are arranged in a array state, a voltage generating circuit, and an input/output terminal. The nonvolatile memory is divided into a plurality of blocks, a block of 1 can be selected in accordance with an inputted address signal out of the plurality of blocks in accordance with an address signal inputted from the outside. The voltage generating circuit can generate erasing voltage in erasing operation of data stored in the nonvolatile memory cell. A first state signal is outputted to the input/output terminal during a term in which erasing voltage is supplied to the nonvolatile memory cell existing in the selected block of 1 and erasing of data stored in the nonvolatile memory cell existing in the selected block of 1 is completed. COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决的问题:提供可操作性提高的非易失性存储装置。 解决方案:非易失性存储器件具有非易失性存储器阵列,其中多个非易失性存储单元被布置成阵列状态,电压产生电路和输入/输出端子。 非易失性存储器被分成多个块,根据从外部输入的地址信号,可以根据多个块中的输入的地址信号来选择1的块。 电压产生电路可以在存储在非易失性存储单元中的数据的擦除操作中产生擦除电压。 在将擦除电压提供给存在于所选择的块1中的非易失性存储器单元并擦除存储在选定块1中的非易失性存储单元中的数据的项期间,将第一状态信号输出到输入/输出端子 完成了。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • Simulation method and program
    • 模拟方法与程序
    • JP2007219930A
    • 2007-08-30
    • JP2006041009
    • 2006-02-17
    • Elpida Memory IncHitachi Ulsi Systems Co Ltdエルピーダメモリ株式会社株式会社日立超エル・エス・アイ・システムズ
    • NISHIO YOJISENBA SEIJIAOKI HIYAKUGOUKOSHOJI KAZUYOSHIMATSUO KOJIOTSUKA MARIKOIKEMATSU RYUICHINONOYAMA SADAHIROFUJII YOSHIE
    • G06F17/50G01R31/28
    • G06F17/5009
    • PROBLEM TO BE SOLVED: To provide a simulation method allowing setting of a parameter related to an input/output characteristic on a user side about a memory having a plurality of chips.
      SOLUTION: The simulation method has steps of: selecting one from a plurality of parameters related to the input/output characteristic; determining whether to set selection by a comment symbol for preventing execution of a corresponding line or to set the selection by an identification code that is an identifier common to the chips set to the same selection, to the setting line provided in a file for setting the necessary selection from a plurality of pieces of the selection of the selected parameter; deleting the comment symbol of the setting line of the necessary selection of the plurality of pieces of the selection and making the setting line effective when setting the selection by the comment symbol, and replacing the identification code included in the setting line with information for setting the necessary selection when setting the selection by the identification code; and executing simulation.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种允许在具有多个芯片的存储器上设置与用户侧的输入/输出特性有关的参数的模拟方法。 解决方案:模拟方法具有以下步骤:从与输入/输出特性相关的多个参数中选择一个; 确定是否通过用于防止相应行的执行的注释符号来设置选择,或者通过作为设置为相同选择的芯片共有的标识符的识别码将选择设置到设置在用于设置 从所选择的参数的多个选择中进行必要的选择; 删除多条选择的必要选择的设定行的注释符号,并且在通过注释符号设置选择时使设置行有效,并且将包括在设置行中的识别码替换为用于设置 通过识别码设置选择时的必要选择; 并执行仿真。 版权所有(C)2007,JPO&INPIT