专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008218877A Substrate treatment device and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：JP2008218877A
公开(公告)日：2008-09-18
申请号：JP2007057109
申请日：2007-03-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAMAKURA TSUKASA , AKAE HISANORI , YONEBAYASHI MASAHIRO , HIROSE YOSHIRO
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device which has a mechanism to generate remote plasma and can perform the uniform gas-cleaning of a support board to support the substrate.
SOLUTION: The substrate treatment device includes a treatment chamber 50 to treat the substrate 1, a showerhead 15 to supply gas into the chamber like a shower, a treatment gas supply port 6 to supply the treatment gas into the showerhead, a plasma generator 11 which is disposed outside the treatment chamber and which activates at least cleaning gas by plasma, an activated gas supply port 12 to supply gas activated by plasma generator into the showerhead, a support board 2 to support the substrate in the treatment chamber, a heater 3 to heat the substrate supported by the support board arranged below the support board, and an emission port 7 to ventilate the inside of the treatment chamber. In the device, the activated gas supply port is disposed at a position not superimposed with a region 16 to which the substrate is mounted when the activated gas supply port is projected in a vertical direction to the support board.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有生成远程等离子体的机构的基板处理装置，并且可以执行支撑板的均匀气体清洁以支撑基板。解决方案：基板处理装置包括处理基板1的处理室50，喷淋头15，以淋浴方式将气体供给到室内，处理气体供给口6将处理气体供给到喷头中，等离子体发电机11，其设置在处理室外部并且至少激活等离子体的清洁气体;活化气体供应端口12，用于将由等离子体发生器激活的气体供应到喷头中;支撑板2，用于将基板支撑在处理室中; 加热器3，用于加热由布置在支撑板下方的支撑板支撑的基板，以及排出口7，以使处理室的内部通风。在该装置中，当活性气体供给口沿与支撑基板垂直的方向突出时，活性气体供给口配置在不与安装基板的区域16重叠的位置。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007088176A Substrate treating device, and method for manufacturing semiconductor device 审中-公开
标题翻译：衬底处理器件，以及制造半导体器件的方法
公开(公告)号：JP2007088176A
公开(公告)日：2007-04-05
申请号：JP2005274405
申请日：2005-09-21
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO , SUEYOSHI MAMORU , HIROSE YOSHIRO , KAMAKURA TSUKASA , AKAE HISANORI
IPC分类号： H01L21/205 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment capable of raising uniform heating in a substrate, uniforming an in-plane temperature distribution in the substrate treatment, and raising the uniformity of thickness in depositing a film. SOLUTION: A substrate treating device includes a treatment chamber 41 for treating the substrate 3, a support board 50 for supporting the substrate 3 inside the treatment chamber 41, and a heater 76 for heating the substrate 3 in the treatment chamber 41. A plurality of projections are arranged on the upper surface of the support board 50, and arrayed in a grid shape. The flatness of the upper surface of the support board is ≤0.015 mm in a circumferential direction and ≤0.025 mm in a radial direction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够在基板中均匀加热的基板处理，使基板处理中的面内温度分布均匀化，提高膜的沉积的均匀性。解决方案：基板处理装置包括用于处理基板3的处理室41，用于将处理室41内的基板3支撑的支撑板50和用于加热处理室41中的基板3的加热器76。多个凸起布置在支撑板50的上表面上，并排成格子状。支撑板的上表面的圆周方向的平坦度≤0.015mm，径向≤0.025mm。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2010087361A Production process of semiconductor device 审中-公开
标题翻译：半导体器件的生产工艺
公开(公告)号：JP2010087361A
公开(公告)日：2010-04-15
申请号：JP2008256553
申请日：2008-10-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIZUNO KANEKAZU , ASAI MASAYUKI , YONEBAYASHI MASAHIRO , OKUDA KAZUYUKI , HOTTA HIDEKI
IPC分类号： H01L21/318 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To suppress generation of particles even after a low temperature purge (LTP) treatment.
SOLUTION: A production process of a semiconductor device includes: a step of carrying a wafer 200 into a treatment chamber 201; a step of supplying alternately a dichlorosilane (DCS) gas from a gas supply section 249 and an NH
3 gas from a gas supply section 238 to the treatment chamber 201 and forming a SiN film on the wafer 200; and a step of carrying the wafer 200 having the formed film from the treatment chamber 201, thereby successively forming SiN films on the wafers 200 for a plural number of times, while repeating those steps. While carrying a wafer 200 having a formed film from the treatment chamber 201 and carrying another wafer 200 where a film is subsequently to be formed into the treatment chamber 201, the process further includes: a step of changing the temperature of the treatment chamber 201; and a step of supplying an NF
3 gas from the gas supply section 249 and an N
2 gas from a gas supply section 237 to the treatment chamber 201 and performing plasma excitement of the N
2 gas in the gas supply section 237.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：即使在低温吹扫（LTP）处理之后也抑制颗粒的产生。解决方案：半导体器件的制造方法包括：将晶片200承载到处理室201中的步骤; 将来自气体供给部249的二氯硅烷（DCS）气体和NH 3 SB 3气体从气体供给部238交替供给到处理室201并在晶片200上形成SiN膜的工序; 以及从处理室201携带具有成膜的晶片200的步骤，从而在重复这些步骤的同时在晶片200上连续形成SiN膜多次。在从处理室201携带具有成膜的晶片200的同时，将另外的晶片200放置在处理室201中后，其中还包括：改变处理室201的温度的步骤; 以及从气体供给部249供给NF SB 3气体和N气体从气体供给部237向处理室201供给的工序，进行等离子体激发气体供应部分237中的N 2 气体。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007095754A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007095754A
公开(公告)日：2007-04-12
申请号：JP2005279600
申请日：2005-09-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： AKAE HISANORI , HIROSE YOSHIRO , KAMAKURA TSUKASA , YONEBAYASHI MASAHIRO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which reaction between remaining gas elements and the surface of a substrate can be made uniform after treatment of the substrate, and the uniformity of substrate treatment can be improved within the substrate surface.
SOLUTION: A substrate is taken in a treatment chamber, and a processing gas is supplied into the treatment chamber to treat the substrate. Next, after the treatment of the substrate, the treatment chamber is purged while the treated substrates are being turned therein, and reaction between remaining gas elements and the surface of the substrate is made uniform after the treatment. Then, the treated substrates are taken out from the treatment chamber.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造半导体器件的方法，通过该方法可以在处理衬底之后使剩余气体元件和衬底表面之间的反应均匀，并且可以提高衬底处理的均匀性基材表面。解决方案：将基板带入处理室，并将处理气体供应到处理室中以处理基板。接下来，在处理基板之后，处理室在被处理的基板被转动的同时被清除，并且在处理之后使剩余气体元件和基板表面之间的反应均匀。然后，将处理过的基板从处理室中取出。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2010118441A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010118441A
公开(公告)日：2010-05-27
申请号：JP2008289726
申请日：2008-11-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO , OKUDA KAZUYUKI
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which scratches on a substrate reverse surface are reduced by eliminating production of particles at contact portions of a port column and the substrate.
SOLUTION: The method of manufacturing the semiconductor device includes a substrate carrying-in step of carrying a plurality of substrates held by a substrate holding means into a processing chamber, a pressure lowering step of lowering the pressure in the processing chamber, a substrate processing step of introducing a processing gas into the processing chamber in a state wherein the substrate holding means is rotated to process the substrate, and a pressure raising step of raising the pressure in the processing chamber, the substrate holding means being stopped from rotating after the pressure in the processing chamber is raised up to predetermined pressure in the pressure raising step.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过消除在端口塔和基板的接触部分处产生颗粒而减少基板反面上的划痕的半导体器件的制造方法。解决方案：制造半导体器件的方法包括将由衬底保持装置保持的多个衬底承载到处理室中的衬底承载步骤，降低处理室中的压力的压力降低步骤，基板处理步骤，在基板保持装置旋转以处理基板的状态下将处理气体引入处理气体;以及升压步骤，提高处理室中的压力，基板保持装置停止转动，在加压步骤中，处理室中的压力升高到预定压力。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2006278594A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2006278594A
公开(公告)日：2006-10-12
申请号：JP2005093462
申请日：2005-03-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OOKA TSUKASA , YONEBAYASHI MASAHIRO , HIROSE YOSHIRO , AKAE HISANORI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce adhesion of reaction product by cleaning gas to a member in a processing room.
SOLUTION: A resistance heating heater 46 is kept to a cleaning temperature Tcln, and an inner part of the processing room 20 is etched and purged. The resistance heating heater 46 is kept in a purge temperature Tpur while the resistance heating heater 46 is raised to a processing temperature Tpro for processing a next substrate 26, and the inner part of the processing room 20 is purged. The purge temperature Tpur is set to be higher than a removal temperature Tdes of gas comprising carbon C and to be lower than a reaction temperature Trea of gas comprising carbon C. The removal temperature Tdes of gas comprising carbon C is that which sufficiently urges reaction of gas comprising fluorine F which remains in the processing room 20 and carbon C comprised in a substrate holding plate 42 and the like.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过清洁气体来减少反应产物对处理室中的构件的粘附。解决方案：将电阻加热加热器46保持在清洁温度Tcln，并且处理室20的内部被蚀刻和清洗。电阻加热器46保持在净化温度Tpur中，同时电阻加热器46升高到加工温度Tpro以处理下一个基板26，并且处理室20的内部被清除。吹扫温度Tpur设定为高于包含碳C的气体的去除温度Tdes并且低于包含碳C的气体的反应温度Trea。包含碳C的气体的去除温度Tdes是足够促进包含保留在处理室20中的氟F和包含在基板保持板42等中的碳C的气体。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2014067796A Method for manufacturing semiconductor device and substrate processing device 有权
标题翻译：制造半导体器件和衬底加工器件的方法
公开(公告)号：JP2014067796A
公开(公告)日：2014-04-17
申请号：JP2012210757
申请日：2012-09-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO , YOSHINO AKIHITO
IPC分类号： H01L21/205 , C23C16/02 , C23C16/24 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a substrate processing device, capable of forming a desired film.SOLUTION: A method for manufacturing a semiconductor device which processes a substrate in a processing chamber comprises the steps of: repeatedly performing a step of supplying a chlorine-containing gas to the substrate and a step of supplying a silicon-containing gas to the substrate supplied with the chlorine-containing gas (first substrate processing step); and supplying a silicon-containing gas to the substrate for which the first substrate processing step was performed (second substrate processing step).
摘要翻译：要解决的问题：提供一种能够形成期望的膜的半导体器件和衬底处理器件的制造方法。解决方案：一种用于处理处理室中的衬底的半导体器件的制造方法，包括以下步骤：重复执行向基板供给含氯气体的步骤和向供给含氯气体的基板供给含硅气体的步骤（第一基板处理步骤）。并向进行了第一基板处理步骤的基板供给含硅气体（第二基板处理步骤）。

8. 发明专利

JP2011134748A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011134748A
公开(公告)日：2011-07-07
申请号：JP2009290254
申请日：2009-12-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method of improving productivity of a substrate by forcibly removing cracks and film peeling and preventing a reaction tube from generating any particles.
SOLUTION: Two steps are executed, namely a step of carrying a deposited substrate 2 from a treatment chamber 32 and increasing a temperature in the treatment chamber from a deposition temperature, and a step of supplying an activation gas activated by plasma excitation in the treatment chamber and a mixed gas of a nitriding agent after the increased temperature in the treatment chamber reaches a stable, fixed value and forcibly removing a film causing cracks and film peeling because of adhesion to the inside of the treatment chamber.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决方案：提供一种通过强制地除去裂纹和膜剥离并防止反应管产生任何颗粒来提高基板的生产率的方法。解决方案：执行两个步骤，即从处理室32携带沉积的基板2并从沉积温度提高处理室中的温度的步骤，以及将通过等离子体激发激活的活化气体的步骤处理室和处理室中温度升高之后的氮化剂的混合气体达到稳定的固定值，并且强制地除去由于对处理室内部的粘附而引起裂纹和膜剥离的膜。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010016033A Method for manufacturing semiconductor device and substrate treatment apparatus 审中-公开
标题翻译：制造半导体器件和基板处理装置的方法
公开(公告)号：JP2010016033A
公开(公告)日：2010-01-21
申请号：JP2008172134
申请日：2008-07-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO , KAMAKURA TSUKASA , AKAE HISANORI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for improving the uniformity of a formed film thickness and reproducibility by suppressing a variation in the uniformity of the formed film thickness caused by the deformation of a susceptor when a treatment chamber of a substrate treatment apparatus is subjected to dry cleaning.
SOLUTION: The substrate treatment apparatus includes: a treatment chamber 46; a susceptor 56; a film forming gas supply line 58; fluorine-based gas supply lines 102, 103 for supplying fluorine-based gases; an activation mechanism 101 for activating the fluorine-based gas by plasma; an activated gas supply line 58 for supplying the fluorine-based gas activated by the plasma by the activation mechanism to the inside of the treatment chamber; and a control section 41 for controlling so that the treatment of forming a film by supplying the film forming gas to the substrate is repeated at least one or more times, the treatment of carrying a dummy substrate into the treatment chamber and placing the carried substrate on the susceptor and supplying the fluorine-base gas activated by the plasma into the treatment chamber is repeated a plurality of times, and the treatment of carrying the substrate into the treatment chamber again and forming a film is executed at least at one or more times.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过抑制由基体处理室的基座的变形引起的成形膜厚度的均匀性的变化来提高成膜厚度和再现性的均匀性的方法对设备进行干洗。解决方案：基板处理装置包括：处理室46; 感受器56; 成膜气体供给管线58; 供给氟系气体的氟系气体供给管线102,103; 用于通过等离子体激活氟基气体的激活机构101; 用于将通过激活机构激活的等离子体的氟系气体供给到处理室的内部的活性气体供给管线58; 以及控制部分41，用于控制，使得通过将成膜气体供给到基板来形成膜的处理重复至少一次或多次，将伪基板运送到处理室中并将载置的基板放置在承受器并且将由等离子体激活的氟基气体供给到处理室中多次重复，并且至少一次或多次执行再次将基板输送到处理室中并形成膜的处理。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2004193471A Substrate processing apparatus and manufacturing method of semiconductor device 审中-公开
公开(公告)号：JP2004193471A
公开(公告)日：2004-07-08
申请号：JP2002362081
申请日：2002-12-13
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KASATSUGU KATSUNAO , YONEBAYASHI MASAHIRO , OOKA TSUKASA , MOCHIZUKI TAKAYUKI , AKAE HISANORI , NISHITANI EISUKE
IPC分类号： H01L21/683 , H01L21/02 , H01L21/205 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of improving the uniformity of substrate processing by enhancing the uniformity of the temperature distribution of a substrate mount member, and to provide a manufacturing method of a semiconductor device employing the same. SOLUTION: The substrate mounting member 30 on which the substrate 16 is mounted, a heating member 17 for heating the substrate 16 via the substrate mounting member 30, and a support member 40 for supporting a peripheral part 31 of the substrate mounting member 30 are placed in a processing chamber 10; recessed parts 32 located at an equal interval in the circumferential direction are formed to the peripheral part 31 of the substrate mounting member 30 or the support member 40, at a position equivalent to a contact part between the peripheral part 31 of the substrate mount member 30 and the support member 40; a gap length W of the recessed parts 32 in the circumferential direction is selected to be 1mm≤W≤20mm; and the length h of the recessed parts 32 in the height direction is selected to be 0.5mm≤h≤5mm. COPYRIGHT: (C)2004,JPO&NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式