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1. 发明专利

JPH06169031A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06169031A
公开(公告)日：1994-06-14
申请号：JP21373893
申请日：1993-08-30
申请人： HITACHI LTD
发明人： ITO CHIKAICHI , HARADA YUKIYOSHI , KAMIKAWAI RYOTARO
IPC分类号： H01L21/60 , H01L23/12 , H01L23/14
摘要： PURPOSE:To minimize a stress working on a joint section between an IC chip and a wiring board and enhance the reliability of the wiring board, facilitate the increasing of the number of wiring layers and eliminate warping of the board by constituting the wiring board with the same material as that for the IC chip and forming wirings on an insulating film on the board by way of soft polymer layer. CONSTITUTION:This semiconductor device provides a semiconductor board 1 and an insulating film 2 formed on the front and rear sides of the semiconductor board 1 and a first soft polymer layer 4 which is formed on the insulating film 2 and has a first opening. There are further provided a first wiring 5 which is formed, extending on the bottom and the sides of the first opening, and what is more, which is not filled up in the central part of the opening, and an IC chip 6 which is electrically connected to the first wiring by means of solder in a location different from the first opening. The semiconductor board 1 and the IC chip are prepared with the same material. For example, a silicon board is applied for the board 1 where a through hole is bored with a laser.

2. 发明专利

JPS6276520A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6276520A
公开(公告)日：1987-04-08
申请号：JP19538286
申请日：1986-08-22
申请人： HITACHI LTD
发明人： HONMA YOSHIO , NOZAWA HISAO , HARADA YUKIYOSHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make concaves and convexes on the surface flat easily and exactly and to increase integration density by forming a processed film on a substrate and forming an organic coating all over the surface to make it flat and by etching at a + or -50% etching speed the coating and the processed film by using a gas which contains a specific gaseous organic material and oxygen. CONSTITUTION:An insulating layer or a conductive layer (a coated layer) 23 is formed by coating on the surface which has a recession and a projection of a semiconductor substrate 21. The coating layer 23 on the surface of the substrate 21 makes the surface flat as a whole since the layer is coated thinly on a projection C, on the top D of a step difference, etc. For the material of the coating layer 23, a material which has the nearly equal etching speed to the etching speed of the semiconductor substrate 21 is used. If the difference of the etching speed is + or -50%, the material is practically preferable and especially, a range of + or -30% is desirable. For the etching of the surface of such a semiconductor substrate 21, a mixed gas of an organic carbon compound gas containing one of chlorine, bromine or fluorine and oxygen of maximum concentration 20% is used.

3. 发明专利

JPS5932141A Manufacture of electronic device 失效
标题翻译：电子器件的制造
公开(公告)号：JPS5932141A
公开(公告)日：1984-02-21
申请号：JP14114982
申请日：1982-08-16
申请人： Hitachi Ltd
发明人： SAIKI ATSUSHI , HARADA YUKIYOSHI , OKETA YOSHINORI
IPC分类号： H05K5/00 , H01L21/52 , H01L21/58 , H01L21/60 , H01L23/538
CPC分类号： H01L24/83 , H01L23/5389 , H01L24/26 , H01L24/82 , H01L24/96 , H01L24/97 , H01L2224/16 , H01L2224/24 , H01L2224/24137 , H01L2224/24227 , H01L2224/8319 , H01L2224/8385 , H01L2224/92 , H01L2224/97 , H01L2924/01013 , H01L2924/01078 , H01L2924/07802 , H01L2224/96 , H01L2224/82 , H01L2224/83 , H01L2924/00012
摘要： PURPOSE:To protect an electronic device from a damage by plating an electronic part on a low melting point material layer, heating the part and burying it in the layer, thereby facilitating the handling of the part. CONSTITUTION:IC pellets 2-4 are aligned on a polytetrafluoroethylene plate 1 in a matrix shape, heated at 190-220 deg.C for 10-60min so as to soften the plate, pressed by the own weight of the pellets or as required and buried. Then, the surface is covered with polyimide resin 5, a window is opened, and aluminum wirings 6-10 are deposited. Then, an LSI covered with an insulator can be readily assembled. When the pellets are treated by burying them in a low melting point material in this manner, they can be more readily handed as compared with a sole pellet, and the support can protect the surfaces of the pellets.
摘要翻译：目的：为了通过在低熔点材料层上电镀电子部件来保护电子设备免受损坏，加热部件并将其埋在层中，从而便于部件的处理。构成：将IC颗粒2-4在基体形状的聚四氟乙烯板1上排列，在190-220℃加热10-60分钟，以软化板，由颗粒的重量或按需要压制，埋葬。然后，用聚酰亚胺树脂5覆盖表面，打开窗户，并沉积铝布线6-10。然后，可以容易地组装用绝缘体覆盖的LSI。当以这种方式将颗粒埋在低熔点材料中进行处理时，与底部颗粒相比，它们可以更容易地进行处理，并且支撑体可以保护颗粒的表面。

4. 发明专利

JPS58222532A Semiconductor device and manufacture thereof 失效
标题翻译：半导体器件及其制造
公开(公告)号：JPS58222532A
公开(公告)日：1983-12-24
申请号：JP10375882
申请日：1982-06-18
申请人： Hitachi Chem Co Ltd , Hitachi Ltd , Hitachi Tobu Semiconductor Ltd
发明人： ABE TOORU , TAKAGI TAKESHI , IIDA SATOSHI , KAWAI SHIGETAKA , HARADA YUKIYOSHI , SAIKI ATSUSHI , OOSHIMA TOYOJI , ISHIMARU TOSHIAKI
IPC分类号： H01L23/52 , H01L21/60
CPC分类号： H01L24/97 , H01L24/82 , H01L2224/24 , H01L2224/24227 , H01L2224/97 , H01L2924/01078 , H01L2924/014 , H01L2924/15311 , H01L2224/82 , H01L2924/00012
摘要： PURPOSE:To obtain the semiconductor device, which can easily execute a large number of mountings simultaneously and manufacturing cost thereof is low, by forming an electrode (an external terminal) through a semiconductor pellet on the surface of a base body and the partially removed section of an insulator layer coated on an insulator. CONSTITUTION:The insulator 2 and the semiconductor pellet 5 are formed onto the base body 1, and the insulator layer 7 is formed. Evaporating wiring 9 is evaporated, the solder electrodes 10 (10E is one for an emitter, 10B one for a base and 10C one for a collector) are formed through solder dipping, solder plating or solder evaporation, and the semiconductor device 11 is completed. All of a large number of the semiconductor devices 11 can be connected simultaneously to external leads 12E, 12B, 12C through solder dissolution by an oven flow of the solder electrodes 10E, 10B, 10C previously extracted on the semiconductor device 11.
摘要翻译：目的：通过在基体的表面上形成通过半导体颗粒的电极（外部端子），能够容易地同时执行大量安装并且制造成本低的半导体器件，并且部分去除部分涂覆在绝缘体上的绝缘体层。构成：将绝缘体2和半导体芯片5形成在基体1上，形成绝缘体层7。蒸发布线9被蒸发，焊料电极10（10E是发射极的一个，用于基底的10B，用于集电体的10E），通过焊料浸渍，焊料电镀或焊料蒸发形成，并且半导体器件11完成。通过预先在半导体器件11上提取的焊料电极10E，10B，10C的烘箱流，可以将大量的半导体器件11同时连接到外部引线12E，12B，12C。

5. 发明专利

JPS572521A FORMING METHOD FOR SELF-ALIGNMENT MULTILAYER WIRE 失效
公开(公告)号：JPS572521A
公开(公告)日：1982-01-07
申请号：JP7554680
申请日：1980-06-06
申请人： HITACHI LTD
发明人： TSUNEKAWA SUKEYOSHI , HONMA YOSHIO , HARADA YUKIYOSHI
IPC分类号： H01L21/302 , H01L21/30 , H01L21/3065
摘要： PURPOSE:To enhance the reliability of a microminiature multilayer wire by burying a metal or an insulator by a bias sputtering method in the recesses of a substrate, thereby suppressing the disconnection and the shortcircuitting of the wire. CONSTITUTION:An oxidized film 42 is formed on a silicon substrate 41, a photo resist is patterned on a metal 43 to become a wire formed by sputtering on the entire surface of the substrate, and with the photo resist thus patterned as a mask the metal 43 is patterned. A bias sputtering is performed thereon to equalize the surface of the metal 43 to the surface of an SiO2 film 45, and the exposed photo resist is isolated by etching. Thus, the SiO2 film can be so buried between metallic wires in a self-aligning manner that the surfaces may approximately coincide with one another. When these steps are repeated, a multilayer wire can be formed.

6. 发明专利

JPS5495185A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5495185A
公开(公告)日：1979-07-27
申请号：JP199878
申请日：1978-01-13
申请人： HITACHI LTD
发明人： NISHIDA TAKASHI , UEKI KAZUYOSHI , MIZUTANI TATSUMI , HARADA YUKIYOSHI
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PURPOSE:To facilitate the formation of a multi-layer wiring to improve reliability by utilizing the directivity, which is a feature of the laser evaporation method, to make the step difference of the semiconductor substrate flat. CONSTITUTION:Al film 303 is evaporated on semiconductor substrate 301 where an active region is formed, and mask 304 of a positive-type photo-resistor is formed. Next, film 303 is etched by the reaction-property sputter etching using BCl3 as reaction gas, and film 303 is made into the form of Al wiring 303'. After that, SiO2 film 305 is caused to adhere to all the surface of substrate 301 by the laser evaporation method while leaving mask 304 as it is, and needless mask 304 and SiO2 film 305' which is caused to adhere onto mask 304 are removed to obtain a structure where all the surface is flat. Next, Si3N4 film 306 is grown throughout the surface by the plasma CVD method. Thus, flat substrate 301 where Al wiring 303' is buried is obtained, and is laminated as required.

7. 发明专利

JPS5454584A PRODUCTION OF INSB MIS STRUCTURE AND DEVICE 失效
公开(公告)号：JPS5454584A
公开(公告)日：1979-04-28
申请号：JP12094077
申请日：1977-10-11
申请人： HITACHI LTD
发明人： KODERA NOBUO , HARADA YUKIYOSHI , NISHIDA TAKASHI
IPC分类号： H01L29/78 , H01L21/18 , H01L21/205 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/331 , H01L27/12 , H01L29/20 , H01L29/40 , H01L29/73 , H01L29/786
摘要： PURPOSE:To obtain a device suitable for high speed arithmetic circuits by providing high electron mobility to InSb semiconductor thin film and forming stable gate oxide films thereby forming a plurality of MOS structures composed of InSb. CONSTITUTION:After a gate region 62 is diffusion-formed on a Si substrate 60, the entire surface is covered with a SiO2 film 66 and an opening is etched over the region 62. An underlying glass film 67 composed of SiO2 and Al2O3 is deposited over the entire surface. Next, an InSb film 65 of stoichiometric composition is grown from an In crucible and Sb crucible and further an In film 651 is deposited thereon by a three temperature vapor deposition method. Thereafter, the films are melted by a photo wire zone melt method to coarsen the grain boundaries and perform impurity refining. The InSb film 65 is then polished until the underlying glass film 67 exposes and an InSb film is formed on the gate region 62, after which a SiO2 film 68 is grown over the entire surface by a CVD method. In this way, the thickness of the InSb film is made 0.03 to 0.1mum and the electron mobilities of 2 to 8X10 cm /v.sec. were obtained.

8. 发明专利

JPS53109479A FORMING METHOD OF INSULATING FILM 失效
公开(公告)号：JPS53109479A
公开(公告)日：1978-09-25
申请号：JP2384877
申请日：1977-03-07
申请人： HITACHI LTD
发明人： HARADA YUKIYOSHI , NISHIDA TAKASHI , UEKI KAZUYOSHI
IPC分类号： H01L21/302 , H01L21/283 , H01L21/3065 , H01L21/312
摘要： PURPOSE:To obtain the insulating film flat and strong on the substrate, by forming the wiring pattern on the semiconductor substrate via the insulating film and by coating inorganic insulator between wires with laser evaporation method, after coating the pattern with the resist film.

9. 发明专利

JPS53105980A PATTERN FORMATION METHOD 失效
公开(公告)号：JPS53105980A
公开(公告)日：1978-09-14
申请号：JP2021377
申请日：1977-02-28
申请人： HITACHI LTD
发明人： HONMA YOSHIO , YAMANAKA ICHISUKE , NOZAWA HISAO , HARADA YUKIYOSHI
IPC分类号： H01L21/306 , H01L21/027 , H01L21/302
摘要： PURPOSE:A desired high-molecule resin layer is formed on the substrate via the thin layer of amino silane, polysilazane or cyclo polysilazane of a fixed constitutional respectively. Thus, a micropattern can be formed.

10. 发明专利

JPS5345176A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5345176A
公开(公告)日：1978-04-22
申请号：JP11935076
申请日：1976-10-06
申请人： HITACHI LTD
发明人： NISHIDA TAKASHI , HONMA YOSHIO , MUKAI KIICHIROU , UEKI KAZUYOSHI , HARADA YUKIYOSHI
IPC分类号： H01L21/28 , H01L21/283
摘要： PURPOSE:To open holes at high accuracy even in the case of Al alloy wiring by making a thin Al2O3 film by a laser evaporation method, beforehand providing overhangs to through-holes and lifting these off.

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