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1. 发明专利

JP2006245605A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2006245605A
公开(公告)日：2006-09-14
申请号：JP2006126339
申请日：2006-04-28
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： FUNAHASHI MASAKI , TANITSU RYOSUKE , KASUKAWA AKIHIKO
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser with Fabry-Perot mode oscillations suppressed, resulting in a large sub-mode suppression ratio (SMSR), and a semiconductor laser whose coupling coefficient is satisfactorily uniform, resulting in a high product yield.
SOLUTION: A DFB laser 10 comprises a laminated structure, in which an InP buffer layer 14, an active layer 16, an InP spacer layer 18 with a film thickness of 200 nm, a diffraction grating 20 consisting of a GaInAsP layer and having a periodic of 240 nm and a film thickness of 20 nm, and an InP first clad layer 22, in which the diffraction grating is embedded, are sequentially formed on an InP substrate 12. The peak wavelength λ
max in the optical gain distribution of the active layer is approximately 1,530 nm, and the bandgap wavelength of the diffraction grating is approximately 1,510 nm. By forming the diffraction grating of GaInAsP having λ
g of approximately 1,510 nm, absorption hardly takes place at the oscillation wavelength close to 1,550 nm. The absorption coefficient for the peak wavelength in the optical gain distribution of the active layer is larger than the absorption coefficient for the oscillation wavelength.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供抑制法布里 - 珀罗模式振荡的半导体激光器，导致大的子模式抑制比（SMSR）和耦合系数令人满意地均匀的半导体激光器，导致高产品产量。解决方案：DFB激光器10包括层压结构，其中InP缓冲层14，有源层16，膜厚度为200nm的InP间隔层18，由GaInAsP层和具有240nm的周期性和20nm的膜厚度以及嵌入有衍射光栅的InP第一包层22依次形成在InP基板12上。峰值波长λ max g 的GaInAsP的衍射光栅，在接近1550nm的振荡波长下几乎不发生吸收。有源层的光学增益分布中的峰值波长的吸收系数大于振荡波长的吸收系数。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006303521A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2006303521A
公开(公告)日：2006-11-02
申请号：JP2006158844
申请日：2006-06-07
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： FUNAHASHI MASAKI , TANITSU RYOSUKE , KASUKAWA AKIHIKO
IPC分类号： H01S5/12 , H01S5/227 , H01S5/347
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device that suppresses an oscillation of Fabry Perot Mode, and exhibits a big submode suppression rate or SMSR, and in that a uniformity of bonding factor is excellent, and product yield is high.
SOLUTION: A DFB laser device 10, an embedding hetero type having an oscillation wavelength of 1,550 nm, comprises, on an n-InP substrate 12, an n-InP buffer layer 14, an active layer 16, a p-InP spacer layer 18, a grating 20 consisting of GaInAsP layer, and a lamination structure of p-InP first cladding layer 22 in which a grating is embedded. A peak wavelength λ
max of optical profit distribution of the active layer is about 1,530 nm, and a band gap wavelength of the grating is roughly 1,510 nm. By forming the grating with GaInAsP having a λ
g of about 1,510 nm, absorption hardly occurs with respect to a wavelength near an oscillation wavelength of 1,550 nm. An absorption coefficient with respect to the peak wavelength of the optical profit distribution of the active layer is bigger than an absorption coefficient with respect to the oscillation wavelength.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制法布里珀罗模式的振荡的半导体激光器件，并且具有大的子模式抑制率或SMSR，并且粘结系数的均匀性优异，产品收率高。解决方案：具有振荡波长为1,550nm的嵌入异质型DFB激光装置10在n-InP衬底12上包括n-InP缓冲层14，有源层16，p-InP 间隔层18，由GaInAsP层构成的光栅20和嵌入光栅的p-InP第一包层22的层叠结构。有源层的光学利润分布的峰值波长λ约为1530nm，光栅的带隙波长约为1.510nm。通过用具有约1,510nm的λ g 的GaInAsP形成光栅，相对于1550nm的振荡波长附近的波长几乎不发生吸收。相对于有源层的光学利润分布的峰值波长的吸收系数大于相对于振荡波长的吸收系数。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2003324244A Distribution feedback type semiconductor laser device and distribution feedback type semiconductor laser module 审中-公开
标题翻译：分布式反馈型半导体激光器件和分布式反馈型半导体激光器模块
公开(公告)号：JP2003324244A
公开(公告)日：2003-11-14
申请号：JP2002249018
申请日：2002-08-28
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： FUNAHASHI MASAKI , TANITSU RYOSUKE , KASUKAWA AKIHIKO
IPC分类号： H01S5/12 , H01S5/0687
摘要： PROBLEM TO BE SOLVED: To provide a DFB laser device having high wavelength stability in which a change in oscillation wavelength relative to a change in operation current is small.
SOLUTION: The DFB laser device 50 includes a DFB laser element 52 with a buried heterostrcture having a resonator length of 400μm, a differential resistance of 4 Ω and an oscillation wavelength of 1550 nm; and a heat sink 54 bonding and mounting the DFB laser element 52 in a junction-down manner so that heat resistance is ≤50 K/W. The DFB laser element 52 has the laminated structure of an MQW-SCH layer, a p-InP spacer layer, a diffraction grating whose period is about 240 nm, and a p-InP buried layer for the diffraction grating on the surface of an n-In substrate. The upper part of the lamination structure is processed like mesa-stripes, and carrier block layers are buried in both sides of the lamination structure. A p-InP clad layer and high dope GaInAs contact layer are successively laminated on the p-InP buried layer and the carrier block layers applied to both sides of the p-InP buried layer. In the DFB laser device, the rate-of-change of a change in oscillation wavelength relative to a change in injection current at an operation current 100 mA is 5 pm/mA or less.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有高波长稳定性的DFB激光器件，其中振荡波长相对于工作电流变化的变化小。解决方案：DFB激光器件50包括具有谐振器长度为400μm，差分电阻为4Ω，振荡波长为1550nm的掩埋异质结的DFB激光元件52。和散热片54，以结合下降的方式结合并安装DFB激光元件52，使得耐热性≤50K/ W。 DFB激光元件52具有MQW-SCH层，p-InP间隔层，周期为约240nm的衍射光栅以及n表面上的衍射光栅的p-InP掩埋层的层叠结构 - 在基材中。层压结构的上部像台面条状加工，载体块层埋在层压结构的两侧。 p-InP覆盖层和高掺杂GaInAs接触层依次层叠在p-InP掩埋层上，并且载体块层施加到p-InP掩埋层的两侧。在DFB激光装置中，振荡波长相对于工作电流100mA时的注入电流变化的变化率为5pm / mA以下。版权所有（C）2004，JPO

4. 发明专利

JP2005150270A Semiconductor laser module 审中-公开
标题翻译：半导体激光模块
公开(公告)号：JP2005150270A
公开(公告)日：2005-06-09
申请号：JP2003383319
申请日：2003-11-13
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TANITSU RYOSUKE , YOSHIDA JIYUNJI , TSUKIJI NAOKI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module in which the output light of a semiconductor laser element is optically connected to an optical fiber, and which is reduced in tracking error.
SOLUTION: The semiconductor laser module 4 is composed of at least the semiconductor laser element 1, the optical fiber 3, and an optical element 2 formed of a lens which optically connects the output light of the semiconductor laser element to the optical fiber. The output light of the semiconductor laser element 1 is connected to the optical fiber 3 so that the tracking error temperature dependency of the semiconductor laser element 1 is reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体激光元件的输出光与光纤光学连接并且减小跟踪误差的半导体激光器模块。解决方案：半导体激光器模块4至少由半导体激光元件1，光纤3和由将半导体激光元件的输出光与光纤连接而成的透镜构成的光学元件2 。半导体激光元件1的输出光被连接到光纤3，使得半导体激光元件1的跟踪误差温度依赖性降低。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2007251067A Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：JP2007251067A
公开(公告)日：2007-09-27
申请号：JP2006075694
申请日：2006-03-17
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SEKI MASAYOSHI , TANITSU RYOSUKE , TSUKIJI NAOKI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module which is further improved in bonding reliability by carrying out bonding without producing low melting point layer, in the case of bonding by laser welding.
SOLUTION: The semiconductor laser module is constituted such that: a sealing member stores a base, where a semiconductor laser element consisting of a first metal material is laid, or the semiconductor laser element; a lens holder consisting of a second metal material holds a lens to which the light emitted from the semiconductor laser element is led; and the sealing member and the lens holder are connected via a connection member consisting of a third metal material. The first metal material is a Fe-nickel-Co system alloy, the second metal material where Pb element, Te element, and S element are added, and also Ni element exists in inescapable impurities concentration is a ferrite system stainless alloy excellent in a free-machining property, and the third metal material is a ferrite system stainless alloy where Ni element, Pb element, Te element, and S element exist in inevitable impurities concentration.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在不生产低熔点层的情况下进行接合而进一步提高接合可靠性的半导体激光器模块，在通过激光焊接的情况下。解决方案：半导体激光器模块构成为：密封部件存储由第一金属材料构成的半导体激光元件或半导体激光元件的基底，由第二金属材料构成的透镜保持器保持从半导体激光元件发射的光被引导到的透镜; 并且密封构件和透镜保持器通过由第三金属材料构成的连接构件连接。第一种金属材料是Fe-Ni-Co系合金，添加了Pb元素，Te元素和S元素的第二种金属材料以及不可避免的杂质浓度存在的Ni元素是一种优良的自由度的铁素体系不锈钢合金第三种金属材料是铁素体系不锈钢合金，Ni元素，Pb元素，Te元素和S元素不可避免地存在杂质浓度。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2003069144A Distributed feedback semiconductor laser element 有权
标题翻译：分布式反馈半导体激光元件
公开(公告)号：JP2003069144A
公开(公告)日：2003-03-07
申请号：JP2001258167
申请日：2001-08-28
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： FUNAHASHI MASAKI , TANITSU RYOSUKE , KASUKAWA AKIHIKO
IPC分类号： H01S5/12 , H01S5/227
CPC分类号： H01S5/1228 , H01S5/0287 , H01S5/0654 , H01S5/12 , H01S5/1203 , H01S5/1221 , H01S5/2022 , H01S5/227
摘要： PROBLEM TO BE SOLVED: To provide a distributed feedback semiconductor laser element which stably oscillates in the oscillation wavelength longer than the peak wavelength of the optical gain distribution of an active layer, shows a large sub-mode suppression ratio (SMSR), assures good single mode property of vertical mode even when amount of de-tuning is large, and also assures higher resistance for reflected returning beam.
SOLUTION: A laminate structure of InP buffer layer 14, an active layer 16, a InP spacer layer 18 in the thickness of 200 nm, a GaInAs diffraction grating 20, and a InP clad layer 22 embedding the diffraction grating is provided on a InP substrate 12. The band gap wavelengths of active layer and diffraction grating are about 1540 nm and about 1510 nm. The laminate structure is etched in the shape of mesa-stripe and a current pinching regions of pn isolation are formed in both sides of the mesa-stripe. An absorption coefficient for the peak wavelength of the optical gain distribution of active layer is larger than that for the oscillation wavelength. Moreover, the light emitting end surface and rear end surface are coated to provide the end surface reflectivity of 10% and 90%.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供在比有源层的光学增益分布的峰值波长更长的振荡波长下稳定振荡的分布式反馈半导体激光元件，显示出大的子模式抑制比（SMSR），确保良好的单个即使在去量程大的情况下，垂直模式的模式属性也能确保反射返回光束的电阻更高。解决方案：在InP衬底上设置InP缓冲层14，有源层16，厚度为200nm的InP间隔层18，GaInAs衍射光栅20和嵌入衍射光栅的InP覆盖层22的叠层结构有源层和衍射光栅的带隙波长约为1540nm和约1510nm。层压结构被蚀刻成台面形状，并且在台面条的两侧形成pn隔离的电流夹持区域。有源层的光学增益分布的峰值波长的吸收系数大于振荡波长的吸收系数。此外，发光端面和后端表面被涂覆以提供10％和90％的端面反射率。

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