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1. 发明专利

JP4917257B2 Laser processing method 有权
公开(公告)号：JP4917257B2
公开(公告)日：2012-04-18
申请号：JP2004329560
申请日：2004-11-12
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 隆二杉浦
IPC分类号： H01L21/301 , B23K26/00 , B23K26/06 , B23K26/38 , B23K26/40 , B23K101/42
CPC分类号： B28D5/0011 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular. In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

2. 发明专利

JP4749799B2 Laser processing method 有权
公开(公告)号：JP4749799B2
公开(公告)日：2011-08-17
申请号：JP2005235037
申请日：2005-08-12
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 憲一村松
IPC分类号： B23K26/40 , B23K26/04 , B23K26/06 , B23K101/40 , H01L21/301
CPC分类号： B28D5/0011 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , H01L2224/48091 , H01L2924/00014
摘要： A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 7 7 to 7 12 is made different from an irradiation condition of laser light L for forming the modified regions 7 13 to 7 19 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 µm to 525 µm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 7 1 to 7 19 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 µm to 525 µm, whereby particles are hard to occur.

3. 发明专利

JPWO2005098915A1 レーザ加工方法及び半導体チップ有权
公开(公告)号：JPWO2005098915A1
公开(公告)日：2008-03-06
申请号：JP2006512029
申请日：2005-03-25
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 剛志坂本 , 福満　憲志 , 憲志福満
IPC分类号： H01L21/301 , B23K26/04 , B23K26/38 , B23K26/40
CPC分类号： B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/172 , B23K2203/50 , B28D5/0011
摘要：複数の機能素子を含む積層部が形成された基板が厚い場合であっても、基板及び積層部の高精度な切断を可能にするレーザ加工方法を提供する。このレーザ加工方法では、裏面21をレーザ光入射面として基板4の内部に集光点Pを合わせてレーザ光Lを照射することで、改質領域71,72,73を基板4の内部に形成する。このとき、基板4の表面3と品質改質領域71の表面側端部との距離が5μm〜15μmとなる位置に品質改質領域71を形成している。このような位置に品質改質領域71を形成すると、基板4と共に、基板4の表面3に形成された積層部16(ここでは、層間絶縁膜17a,17b)も切断予定ラインに沿って精度良く切断することができる。

4. 发明专利

JP5632751B2 加工対象物切断方法有权
标题翻译：工件切割方法
公开(公告)号：JP5632751B2
公开(公告)日：2014-11-26
申请号：JP2010549442
申请日：2010-01-27
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 剛志坂本 , 愛湖中川 , 愛湖中川
IPC分类号： H01L21/301 , B23K26/00 , B23K26/064 , B23K26/40 , B23K26/53
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/03 , B23K26/0622 , B23K26/0853 , B23K26/40 , B23K2201/40 , B23K2203/50 , C03B33/0222 , H01L21/67092

5. 发明专利

JP5620553B2 加工情報供給装置有权
标题翻译：加工信息供给装置
公开(公告)号：JP5620553B2
公开(公告)日：2014-11-05
申请号：JP2013160181
申请日：2013-08-01
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 剛志坂本
IPC分类号： G05B19/418 , B23K26/00 , B23K26/40 , B23K26/53
CPC分类号： Y02P90/02

6. 发明专利

JP5597051B2 Laser processing method 有权
公开(公告)号：JP5597051B2
公开(公告)日：2014-10-01
申请号：JP2010164063
申请日：2010-07-21
申请人：浜松ホトニクス株式会社
发明人：剛志坂本
IPC分类号： H01L21/301 , B23K26/40 , B28D5/00
CPC分类号： B28D5/0011 , B23K26/0006 , B23K26/0087 , B23K2203/56
摘要： Disclosed is a laser processing method for cutting out at least a first effective section and a second effective section from a plate-shaped object to be processed. The method comprises a first step and a second step. In the first step, a first modification region in the object to be processed is formed along a first predetermined cutting line, which follows the outer edge of the first effective section, by means of relative movement of the focal point of a laser beam along the first predetermined cutting line. In the second step, after the first step, a second modification region in the object to be processed is formed along a second predetermined cutting line, which follows the outer edge of the second effective section and travels towards the first effective section to intersect the first predetermined cutting line, by means of the relative movement of the focal point of the laser beam along the second predetermined cutting line.

7. 发明专利

JPWO2010090111A1 加工対象物切断方法有权
公开(公告)号：JPWO2010090111A1
公开(公告)日：2012-08-09
申请号：JP2010549442
申请日：2010-01-27
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 剛志坂本 , 愛湖中川 , 愛湖中川
IPC分类号： H01L21/301 , B23K26/00 , B23K26/06 , B23K26/38 , B23K26/40
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/03 , B23K26/0622 , B23K26/0853 , B23K26/40 , B23K2201/40 , B23K2203/50 , C03B33/0222 , H01L21/67092
摘要：非改質領域2を介在させた状態で、改質領域7aから加工対象物1の表面12aに亀裂17aを生じさせ、改質領域7bから加工対象物1の裏面12bに亀裂17bを生じさせる。これにより、改質領域7を複数列形成する際に、シリコン基板12の厚さ方向に亀裂が連続的に進行するのを防止し得る。そして、加工対象物1に応力を生じさせることで、非改質領域2において亀裂17aと亀裂17bとを繋げて加工対象物1を切断する。これにより、加工対象物1の裏面12bにおける亀裂の蛇行等を防止して、加工対象物1を切断予定ライン5に沿って精度良く切断し得る。

8. 发明专利

JP4536407B2 Laser processing method and workpiece 有权
公开(公告)号：JP4536407B2
公开(公告)日：2010-09-01
申请号：JP2004100516
申请日：2004-03-30
申请人：浜松ホトニクス株式会社
发明人：剛志坂本 , 憲一村松
IPC分类号： H01L21/301 , B23K26/40 , B23K101/40
CPC分类号： B23K33/002 , B23K26/0057 , B23K26/40 , B23K2201/36 , B23K2203/50
摘要： A laser processing method is provided, which, when cutting a substrate formed with a laminate part including a plurality of functional devices into a plurality of chips, each chip including at least one of the functional devices, can cut the laminate part with a high precision together with the substrate. In this laser processing method, modified regions differing from each other in terms of easiness to cause the substrate 4 to fracture are formed along respective lines to cut 5a to 5d. Therefore, when an expandable tape is attached to the rear face of a substrate 4 and expanded, an object to be processed 1 is cut stepwise into a plurality of chips. Such stepwise cutting allows uniform tensile stresses to act on respective parts extending along the lines to cut 5a to 5d, whereby interlayer insulating films on the lines to cut 5a to 5d are cut with a high precision together with the substrate 4.

9. 发明专利

JP5670647B2 加工対象物切断方法有权
标题翻译：工件切割方法
公开(公告)号：JP5670647B2
公开(公告)日：2015-02-18
申请号：JP2010112188
申请日：2010-05-14
申请人：浜松ホトニクス株式会社
发明人：浩之岩城 , 浩之岩城 , 孝文荻原 , 孝文荻原 , 剛志坂本 , 剛志坂本 , 雅春星川 , 雅春星川 , 一弘渥美 , 一弘渥美 , 大祐河口 , 大祐河口
IPC分类号： B23K26/38 , B23K26/40 , H01L21/301
CPC分类号： B23K26/40 , B23K26/0057 , B23K2203/50

10. 发明专利

JP5597052B2 Laser processing method 有权
公开(公告)号：JP5597052B2
公开(公告)日：2014-10-01
申请号：JP2010164066
申请日：2010-07-21
申请人：浜松ホトニクス株式会社
发明人：剛志坂本
IPC分类号： H01L21/301 , B23K26/40
摘要： PROBLEM TO BE SOLVED: To provide a laser processing method capable of forming a modified area along each cutting schedule line while preventing damage on each effective part.SOLUTION: When cutting predetermined lines 51, 52, 53 are concentrated on one point towards each of adjacent three effective parts 18, modified areas 71, 72, 73 are formed in intermediate parts 51b, 52b, 53b on each of the cutting predetermined lines 51, 52, 53, and modified areas 71, 72, 73 are not formed in edge parts 51a, 52a, 53a. Thereby a generation of a crack from the modified area 71 in the vicinity of the cutting predetermined lines 52, 53 as the modified area 71 is formed along the cutting predetermined line 51, is prevented and it is prevented that a crack generated from the modified area 71 extends to the opposing effective part 18. Formation of the modified areas 72, 73 along the cutting predetermined lines 52, 53 are the same as the formation of the modified area 71.

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