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1. 发明授权

EP2629320B1 Mask structure and method for defect-free heteroepitaxial deposition 有权转让
公开(公告)号：EP2629320B1
公开(公告)日：2018-10-17
申请号：EP13155361.2
申请日：2013-02-15
申请人： IMEC VZW
发明人： Vincent, Benjamin , Thean, Aaron , Witters, Liesbeth
IPC分类号： H01L21/20 , H01L21/02 , H01L23/04 , H01L25/04 , H01L29/66 , C30B19/00 , C30B23/04 , C30B25/04 , C30B29/40
CPC分类号： H01L21/02639 , C30B19/00 , C30B19/12 , C30B23/04 , C30B25/04 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02538 , H01L21/02647 , H01L21/02664 , H01L21/762 , H01L29/0653 , H01L29/66795 , H01L29/7851
摘要： The invention is related to a mask structure suitable for producing a defect free epitaxially grown structure of a crystalline material on substrate of another crystalline material, the two materials having difference lattice constants. The mask comprises two levels : a first level comprising a first layer provided with a first opening, for example of first trench, the bottom of which is formed by the substrate formed of the first material. The second level comprises at least a barrier placed on at least two opposite sides of the trench. According to a preferred embodiment, the second level comprises one or more second trenches arranged perpendicularly to the first trench. The depth and width of the first and second trenches is such that defects generated in the epitaxially grown layer of the second material at the substrate portion at the bottom of the first trench, and propagating in the direction of the second trenches are trapped in the first trench. In this way, in the larger portion of the second trenches, essentially defect free material can be grown.

2. 发明公开

EP1007770A4 MOLECULAR BEAM EPITAXY EFFUSION CELL 失效
标题翻译：积液用于分子束外延
公开(公告)号：EP1007770A4
公开(公告)日：1999-04-22
申请号：EP98925296
申请日：1998-06-05
申请人： UNIV TEXAS
发明人： MATTORD TERRY J
IPC分类号： C30B23/06 , C30B19/00
CPC分类号： C30B23/066
摘要： A molecular beam epitaxy effusion cell for growing epitaxial layers upon a semiconductor substrate by control of a collimated beam of molecules generated from a source material in a high vacuum environment in order to control the hyper abrupt stoichiometry of the effusion flux. A heated control assembly is used to control the size of the exit openings of the effusion cell. The control assembly comprises a boroelectric heating member such as a grating having a plurality of holes and a perforated cover which are adjustable relative to one another. The grating includes an internal heating element.

3. 发明授权

EP0409691B1 Oxide garnet single crystal 失效
标题翻译：氧化石榴石单晶
公开(公告)号：EP0409691B1
公开(公告)日：1995-10-18
申请号：EP90401966.8
申请日：1990-07-06
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Ryuo, Toshihiko , Watanabe, Toshiaki
IPC分类号： C01F17/00 , C30B19/00
CPC分类号： H01F41/28 , C01F17/0012 , C30B19/00 , C30B29/28
摘要： A novel oxide garnet single crystal, which can be epitaxially grown on a rare earth-gallium garnet wafer and exhibiting excellent performance as a material of magneto-optical devices, is disclosed. The oxide garnet single crystal, grown on the substrate surface by the liquid-phase epitaxial method, has a chemical composition expressed by the formula (BiaEubLn1-a-b)3(Fe1-cMc)5O12, in which Ln is a rare earth element other than europium, e.g., terbium, M is an element selected from the group consisting of aluminum, gallium, indium and scandium, the subscript a is a positive number defined by 0.15

4. 发明公开

EP0620601A3 A GaP red light emitting element substrate and methods of manufacturing it 失效
标题翻译：间隙发射红光的半导体器件和工艺及其制备衬底。
公开(公告)号：EP0620601A3
公开(公告)日：1995-04-19
申请号：EP94105477.7
申请日：1994-04-08
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Yanagisawa, Munehisa c/o Isobe Kojo , Tamura, Yuuki, c/o Isobe Kojo , Arisaka, Susumu, c/o Isobe Kojo , Matsumoto, Hidetoshi, c/o Isobe Kojo
IPC分类号： H01L33/00 , C30B19/00
CPC分类号： H01L33/30 , C30B19/00 , C30B29/44 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L33/0062 , H01L33/305
摘要： A GaP red light emitting element substrate with a large amount of oxygen doped in the p-type GaP layer, and with very few Ga₂O₃ precipitates developed on and/or in the p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, the p-type GaP layer 3 doped with Zn and O, is formed by means of the liquid phase epitaxial growth method. The p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980°C or higher. When the temperature has reached the prescribed temperature of 980°C or higher during the growth using the Ga solution with a high concentration of oxygen, it is also possible to treat said Ga solution to decrease the concentration of the contained oxygen and then continue the growth. It is also possible to conduct the growth using the Ga solution with a high concentration of oxygen until the temperature reaches the prescribed temperature of 980°C or higher, and then, after switching the growth solution to a Ga solution with a low concentration of oxygen, continue the growth.
摘要翻译：提供一种大量的氧的在p型GaP层被掺杂在GaP红色发光元件衬底，并且该很少Ga2O3沉淀开发上和/或在p型GaP层，和制造的方法的所述底物。 n型后GaP层2上生长的n型GaP单结晶基板1，当n型GaP层2由液体相的指构成具有掺杂Zn和O，在所述p型GaP层3 外延生长方法，在p型GaP层3通过使用与氧的浓度高的镓溶液中生长，并且所述镓溶液从基板1移除。当温度降低至980规定的温度，以完成生长 ℃或更高。当温度已经达到980℃或更高的生长使用与氧的高浓度中的Ga溶液中所规定的温度，因此可以治疗所述镓溶液以降低包含的氧的浓度，然后继续生长，因此，可以使用具有氧的高浓度中的Ga溶液中，直至温度达到980℃或更高的规定温度，接着，用氧的浓度低切换生长溶液以Ga的溶液后进行的生长，继续生长。

5. 发明授权

EP2639344B1 METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL 有权
标题翻译：方法生产N-掺杂SIC MONO晶体
公开(公告)号：EP2639344B1
公开(公告)日：2016-04-20
申请号：EP11840494.6
申请日：2011-11-04
申请人： Nippon Steel & Sumitomo Metal Corporation
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , OKADA, Nobuhiro , DANNO, Katsunori , DAIKOKU, Hironori
IPC分类号： C30B29/36 , C30B19/00
CPC分类号： C30B15/20 , C30B15/10 , C30B15/30 , C30B15/36 , C30B17/00 , C30B19/02 , C30B29/36

6. 发明公开

EP2770089A1 METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL OF PERIODIC TABLE, AND NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL OF PERIODIC TABLE PRODUCED BY SAID PRODUCTION METHOD 审中-实审转让
标题翻译：用于生产氮化物半导体来自组13中的周期系统的金属，在这种方法制得的氮化物半导体来自组13中的周期系统的金属
公开(公告)号：EP2770089A1
公开(公告)日：2014-08-27
申请号：EP12841826.6
申请日：2012-10-19
申请人： Mitsubishi Chemical Corporation
发明人： SAITO, Yuya , ITOH, Sumitaka , TERADA, Shigeru , KIMURA, Hiromitu
IPC分类号： C30B29/38 , C30B19/00
CPC分类号： H01L33/32 , C01B21/0632 , C30B19/12 , C30B29/403 , H01L29/2003
摘要： For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration.
摘要翻译：对于通过外延生长一个基底基板那样的主表面上所获得的周期表第13族金属氮化物半导体晶体具有非极性面和/或半极性面作为主表面，就本发明的目的是提供一种高质量的半导体晶体确实具有低吸收系数，为设备有利，且被控制在晶体中掺杂物浓度，并提供一种制造方法，也可以生产半导体晶体。高品质的周期表第13族金属氮化物半导体晶体确实具有晶体和低吸收系数内的精确控制掺杂物浓度并做是因此，对于设备有利，能够提供通过抑制由杂质氧引起的氧掺杂并且具有 Si浓度比将O浓度高。

7. 发明公开

EP2259295A4 EPITAXIAL SUBSTRATE FOR SMEICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：外延片用于半导体元件，半导体元件及其制造方法的外延衬底半导体元件
公开(公告)号：EP2259295A4
公开(公告)日：2013-11-27
申请号：EP09725966
申请日：2009-03-13
申请人： NGK INSULATORS LTD
发明人： MIYOSHI MAKOTO , KURAOKA YOSHITAKA , SUMIYA SHIGEAKI , TANAKA MITSUHIRO
IPC分类号： H01L21/338 , C23C16/34 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/38 , C30B29/40 , H01L21/02 , H01L21/20 , H01L21/205 , H01L29/20 , H01L29/201 , H01L29/778 , H01L29/812
CPC分类号： H01L21/0262 , C30B19/00 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/201 , H01L29/7786

8. 发明公开

EP1969164A2 NON-SPHERICAL SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING THEM 审中-公开
标题翻译：不是球形半导体纳米晶体及其制造方法
公开(公告)号：EP1969164A2
公开(公告)日：2008-09-17
申请号：EP06848853.5
申请日：2006-12-21
申请人： The Research Foundation of State University of New York
发明人： YONG, Ken-Tye , SAHOO, Yudhisthira , Swihart, Mark , PRASAD, Paras
IPC分类号： C30B13/00 , C30B19/00
CPC分类号： C30B29/60 , B82Y30/00 , C30B7/00 , C30B29/46 , C30B29/48
摘要： The present invention relates to a method of making non-spherical semiconductor nanocrystals. This method involves providing a reaction mixture containing a first precursor compound, a solvent, and a surfactant, where the first precursor compound has a Group II or a Group IV element and contacting the reaction mixture with a pure noble metal nanoparticle seed. The reaction mixture is heated. A second precursor compound having a Group VI element is added to the heated reaction mixture under conditions effective to produce non-spherical semiconductor nanocrystals. Non-spherical semiconductor nanocrystals and nanocrystal populations made by the above method are also disclosed.

9. 发明授权

EP0559412B1 Process for producing thin film by epitaxial growth 失效
标题翻译：一种用于通过外延生长产生的薄膜工艺
公开(公告)号：EP0559412B1
公开(公告)日：1997-01-22
申请号：EP93301528.1
申请日：1993-03-01
申请人： TDK Corporation
发明人： Yamasawa, Kazuhito, c/o TDK Corporation , Oido, Atsushi, c/o TDK Corporation , Nakata, Akio, c/o TDK Corporation , Uchida, Nobuya, c/o TKD Corporation
IPC分类号： C30B19/00
CPC分类号： C30B19/00 , C30B19/02 , C30B29/28
摘要： In the manufacture of a thin film by epitaxial growth, defects such as cracking are avoided by increasing the deviation of the lattice constant of the resulting film in the direction of growth from the substrate. Preferably, the deviation is increased at the rate of (0.4 SIMILAR 9) x 10 %/ mu m.

10. 发明公开

EP0107702A4 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SEMICONDUCTOR AREAS. 失效
标题翻译：工艺生产具有隔离介电半导体区的半导体器件。
公开(公告)号：EP0107702A4
公开(公告)日：1987-01-22
申请号：EP83901661
申请日：1983-04-07
申请人： WESTERN ELECTRIC CO
发明人： CELLER GEORGE K , LISCHNER DAVID JOHN , ROBINSON MCDONALD
IPC分类号： H01L21/20 , H01L21/268 , H01L21/762 , C30B19/00 , B05D3/06 , B05D5/12 , H01L21/00
CPC分类号： H01L21/2022 , H01L21/2686 , H01L21/76248 , Y10S148/091 , Y10S148/093
摘要： Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric material are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.

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