专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP4208589A1 CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGE AND METHODS FOR GROWING A MELT OF SILICON IN A CRUCIBLE ASSEMBLY 审中-实审
公开(公告)号：EP4208589A1
公开(公告)日：2023-07-12
申请号：EP21772731.2
申请日：2021-08-30
申请人： GlobalWafers Co., Ltd.
发明人： TOSI, Paolo , PANNOCCHIA, Matteo , SCALA, Roberto
IPC分类号： C30B15/12 , C30B15/14 , C30B29/06

2. 发明公开

EP4107315A1 ACTIVE EDGE CONTROL OF A CRYSTALLINE SHEET FORMED ON THE SURFACE OF A MELT 审中-实审
公开(公告)号：EP4107315A1
公开(公告)日：2022-12-28
申请号：EP21756665.2
申请日：2021-02-19
申请人： Leading Edge Equipment Technologies, Inc.
发明人： KELLERMAN, Peter , GREENLEE, Alison , DAGGOLU, Parthiv , MARTINEZ, Alexander
IPC分类号： C30B15/26 , C30B11/00 , C30B15/00 , C30B15/06 , C30B15/10 , C30B15/14

3. 发明公开

EP3926078A1 PROCÉDÉ DE FABRICATION D'UN CRISTAL SEMI-CONDUCTEUR 审中-公开
公开(公告)号：EP3926078A1
公开(公告)日：2021-12-22
申请号：EP21179412.8
申请日：2021-06-15
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： PIHAN, Etienne , NEHARI, Abdeldjelil
IPC分类号： C30B15/14 , C30B29/06 , C30B29/08 , C30B11/14 , C30B15/10 , C30B17/00
摘要： Procédé de fabrication d'une pièce par solidification d'un matériau semi-conducteur Procédé de fabrication d'une pièce (70) comportant un col (40) et un fût (60) prolongeant le col, la pièce comportant une portion monocristalline représentant plus de 80 % de son volume, le procédé comportant les étapes de :
i) fourniture d'un creuset (5) contenant un bain (20) comportant un matériau semi-conducteur en fusion choisi parmi le silicium, le germanium et leurs mélanges, et d'un germe (25) solide comportant le matériau semi-cristallin,
ii) mise en contact du germe avec le bain,
iii) formation du col en translatant le germe par rapport au bain pour extraire et solidifier le matériau semi-conducteur hors du bain, et
iv) formation du fût en refroidissant le bain et en réduisant la vitesse de translation du germe par rapport à l'étape iii),
la pièce présentant au moins une section, transverse à l'axe (X) de translation du germe, dont l'aire est supérieure ou égale à 0,15 m 2 .

4. 发明授权

EP3523465B1 VERFAHREN ZUM ZIEHEN EINES EINKRISTALLS AUS HALBLEITERMATERIAL AUS EINER SCHMELZE, DIE IN EINEM TIEGEL ENTHALTEN IST 有权
公开(公告)号：EP3523465B1
公开(公告)日：2020-02-19
申请号：EP17781430.8
申请日：2017-09-28
申请人： Siltronic AG
发明人： SCHRÖCK, Thomas , HEUWIESER, Walter
IPC分类号： C30B15/14 , C30B15/20 , C30B15/26

5. 发明公开

EP3532658A1 SINGLE-CRYSTAL PEROVSKITE SOLID SOLUTIONS WITH INDIFFERENT POINTS FOR EPITAXIAL GROWTH OF SINGLE CRYSTALS 审中-实审
公开(公告)号：EP3532658A1
公开(公告)日：2019-09-04
申请号：EP17863804.5
申请日：2017-10-31
申请人： Quest Integrated, LLC
发明人： FRATELLO, Vincent
IPC分类号： C30B3/00 , C30B15/14 , C30B1/00

6. 发明公开

EP3523465A1 VERFAHREN ZUM ZIEHEN EINES EINKRISTALLS AUS HALBLEITERMATERIAL AUS EINER SCHMELZE, DIE IN EINEM TIEGEL ENTHALTEN IST 有权
公开(公告)号：EP3523465A1
公开(公告)日：2019-08-14
申请号：EP17781430.8
申请日：2017-09-28
申请人： Siltronic AG
发明人： SCHRÖCK, Thomas , HEUWIESER, Walter
IPC分类号： C30B15/14 , C30B15/20 , C30B15/26

8. 发明授权

EP2644755B1 SINGLE CRYSTAL PULLING DEVICE AND LOW HEAT CONDUCTIVE MEMBER TO BE USED IN SINGLE CRYSTAL PULLING DEVICE 有权
公开(公告)号：EP2644755B1
公开(公告)日：2018-07-18
申请号：EP11843787.0
申请日：2011-11-21
申请人： Toyo Tanso Co., Ltd.
发明人： OKADA, Osamu , KAWAKAMI, Masaaki
IPC分类号： C30B15/10 , C04B35/83 , C30B29/06 , C30B15/14
CPC分类号： C30B15/14 , C30B15/10 , C30B15/30 , C30B29/06 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling apparatus (1) has a quartz crucible (2) for accommodating silicon melt (3), a graphite crucible (4) for retaining the quartz crucible (2), a tray (5) for securing and holding the graphite crucible (4) from below, and a crucible rotating shaft (6) for supporting the tray (5) from below and for elevating and lowering the tray (5) and the crucibles (2), (4) while rotating them. A low heat conductive member (10) is interposed on a joint surface between the tray (5) and the crucible rotating shaft (6). The low heat conductive member (10) is formed in a substantially tubular shape, and is interposed in such a manner that a protruding portion of the crucible rotating shaft (6) is inserted through a center hole of the low heat conductive member (10). Thereby, a gap portion (11) is formed below a bottom portion of the tray (5).

9. 发明公开

EP3305947A1 MELTING METHOD DURING FLOATING-ZONE GROWTH OF SILICON 审中-公开
标题翻译：硅的浮区生长熔化法
公开(公告)号：EP3305947A1
公开(公告)日：2018-04-11
申请号：EP16724471.4
申请日：2016-04-20
申请人： Kravtsov, Anatoly
发明人： Kravtsov, Anatoly
IPC分类号： C30B29/06 , C30B13/22 , C30B13/00 , C30B15/14
CPC分类号： C30B29/06 , C30B13/00 , C30B15/14
摘要： The invention relates to the production of silicon, for example, for the power microelectronics or the photoelectric industry including the manufacturing of solar cells. The invention solves the problem of obtaining silicon in the form of high-purity rods made of native silicon of varying quality and forms suitable by their electrical, mechanical and geometrical properties for growing single crystals of various purposes using the float-zone melting method.
The proposed method, which implementation is shown on Fig. 1 and Fig. 2 , shall be realized as follows: silicon is putted into the container, having a thermal insulator (1) and the cooling device (2), and placed in the melting chamber of the apparatus, produce a vacuum and melt, using electron beams (3) for heating. In addition, beams are moved aside up to the specified diameter and start scanning, forming an annular heating zone. A heating zone diameter (5) selected in a way to obtain the required result - to melt down all silicon in container or to maintain part of the initial not melted mass (7) between the molten zone (6) and the walls of the container. After melting of particular part of initial mass (7), the crystal seed (8) is inserted into the container, coupled with a melt and grow the rod (9) of required diameter. The growing process is managed by changing the stretching speed (V) and a heating intensity (3), besides is kept at a constant heating (3) the annular zone (4) diameter. Focal spot scanning path (5) by electron beams together form a shape that is close to the required diameter of the ring and form sufficient heat symmetry field, in order to obtain the cylindrical rod (9).
摘要翻译：本发明涉及例如用于功率微电子学或包括制造太阳能电池的光电工业的硅的生产。本发明通过使用浮区熔化法解决了以由不同质量的天然硅制成的高纯度棒形式获得硅的问题，并且形成适合于其电，机械和几何性质的用于生长各种目的的单晶的硅的问题。图1和图2所示的实施方案应该如下实现：将硅放入具有绝热体（1）和冷却装置（2）的容器中，并将其置于熔化使用电子束（3）进行加热，产生真空并熔化。此外，梁移动到指定的直径并开始扫描，形成一个环形加热区。以获得所需结果的方式选择加热区直径（5） - 熔化容器中的所有硅或保持熔融区（6）与容器壁之间的部分初始未熔化物质（7）。在初始质量块（7）的特定部分熔化后，将晶种（8）插入容器中，与熔体结合并生长所需直径的棒（9）。通过改变拉伸速度（V）和加热强度（3）来管理生长过程，此外保持恒定加热（3）环形区域（4）直径。焦点扫描路径（5）通过电子束一起形成接近环所需直径并形成足够热对称场的形状，以获得圆柱形杆（9）。

10. 发明公开

EP3142973A4 APPARATUS FOR PROCESSING A MELT 审中-公开
公开(公告)号：EP3142973A4
公开(公告)日：2017-12-13
申请号：EP15792841
申请日：2015-05-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
发明人： CARLSON FREDERICK M , KELLERMAN PETER L , MORRELL DAVID , MACKINTOSH BRIAN , DESAI NANDISH
IPC分类号： C30B15/06 , C30B15/10 , C30B15/14 , C30B29/06 , C30B29/64 , F27B3/02 , F27B3/10 , F27B14/06 , F27B14/14 , F27D99/00
CPC分类号： C30B15/06 , C30B15/10 , C30B15/14 , C30B29/06 , C30B29/64 , F27B3/02 , F27B3/10 , F27B14/06 , F27B14/14 , F27D2099/0013 , Y10T117/1048
摘要： An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式