专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP4101951B1 CZOCHRALSKI SINGLE CRYSTAL FURNACE FOR PREPARING MONOCRYSTALLINE SILICON AND METHOD FOR PREPARING MONOCRYSTALLINE SILICON 有权
公开(公告)号：EP4101951B1
公开(公告)日：2023-11-08
申请号：EP21217766.1
申请日：2021-12-26
发明人： OU, Ziyang , BAI, Xiaolong , ZHANG, Xinyu
IPC分类号： C30B15/14 , C30B29/06

2. 发明公开

EP4219803A1 METHOD AND APPARATUS FOR PRODUCING ELECTRICALLY CONDUCTING BULK BETA-GA2O3 SINGLE CRYSTALS AND ELECTRICALLY CONDUCTING BULK BETA-GA2O3 SINGLE CRYSTAL 审中-实审转让
公开(公告)号：EP4219803A1
公开(公告)日：2023-08-02
申请号：EP22154305.1
申请日：2022-01-31
申请人： Siltronic AG
发明人： Galazka, Zbigniew , Bickermann, Matthias , Ganschow, Steffen , Schröder, Thomas , Häckl, Walter
IPC分类号： C30B15/10 , C30B15/14 , C30B15/20 , C30B29/16
摘要： Method and apparatus for producing electrically conducting bulk β-Ga 2 O 3 single crystals grown from the melt, especially by the Czochralski method. To growth the β-Ga 2 O 3 single crystals ( 7 ) of high electrical conductivity and large diameter, larger than one inch, combined with the length exceeding 25 mm, the growth furnace is provided with an inner thermal insulation ( 8 ) of low radiative reflectivity ( R ) in the near infrared spectral region of 1 - 3 µm that decreases reflections of heat back to the growing single crystal ( 7 ) and thus increases the heat dissipation from the growing single crystal ( 7 ). Low reflectivity can be achieved either by high emissivity or high transmittivity. Additionally, the β-Ga 2 O 3 single crystal ( 7 ) is grown at a rate that dynamically decreases as the growth proceeds, to dynamically decrease the latent heat of crystallization and the amount of the heat to be dissipated from the growing single crystal ( 7 ).

3. 发明授权

EP3921461B1 CREUSET FROID 有权
公开(公告)号：EP3921461B1
公开(公告)日：2023-04-05
申请号：EP20702505.7
申请日：2020-02-06
发明人： ZAIDAT, Kader , GARNIER, Christian , HASAN, Ghatfan
IPC分类号： C30B15/10 , C30B15/14 , C30B15/30 , C30B29/06 , C30B35/00 , F27B14/10 , H05B6/24

4. 发明授权

EP3864198B1 VORRICHTUNG ZUM ZIEHEN EINES EINKRISTALLS AUS HALBLEITERMATERIAL NACH DER CZ-METHODE AUS EINER SCHMELZE UND VERFAHREN UNTER VERWENDUNG DER VORRICHTUNG 有权
公开(公告)号：EP3864198B1
公开(公告)日：2022-09-07
申请号：EP19779481.1
申请日：2019-09-27
发明人： MOLCHANOV, Alexander
IPC分类号： C30B15/20 , C30B15/26 , C30B15/14 , C30B29/06 , C30B29/08

5. 发明公开

EP3636806A1 SILICON-BASED MELT COMPOSITION AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL USING SAME 有权
公开(公告)号：EP3636806A1
公开(公告)日：2020-04-15
申请号：EP19807632.5
申请日：2019-05-22
申请人： LG CHEM, LTD.
发明人： LEE, Horim , KIM, Junghwan , CHUNG, Chanyeup , KO, Jung Min
IPC分类号： C30B29/36 , C30B15/36 , C30B15/14
摘要： A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.

[Formula 1] Si a Y b Fe c

In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is
equal to or greater than 0.1 and equal to or less than 0.2.

6. 发明公开

EP3234232A1 DOPPELWANDIGER GRAPHIT-TRICHTER 审中-公开
公开(公告)号：EP3234232A1
公开(公告)日：2017-10-25
申请号：EP15822925.2
申请日：2015-12-16
申请人： SGL Carbon SE
发明人： KESSEL, Jürgen , KAHL, Hans-Georg , MANKA, Christoph
IPC分类号： C30B15/14
CPC分类号： C30B15/14
摘要： The invention relates to a double-walled graphite funnel (1) which has an upper opening (12) and a lower opening (14), wherein the openings (12, 14) have different clear widths and are arranged parallel to one another, and wherein the double-walled graphite funnel (1) is formed from an inner funnel (4) and an outer funnel (3), the inner funnel (4) and outer funnel (3) are composed of graphite, the inner funnel (4) is designed in terms of the dimensions and shape thereof such that said inner funnel can be received in the outer funnel (3), the inner funnel (4) is received in the outer funnel (3) such that an intermediate space (7) is formed between the inner funnel (4) and the outer funnel (3), the intermediate space (7) is, adjacent to the opening (14) with relatively small clear width, delimited by a contact surface formed between the inner funnel (4) and the outer funnel (3), and the intermediate space (7) is, adjacent to the opening (12) with the relatively large clear width, accessible from the outside, characterized in that the intermediate space (7) between the inner funnel (4) and the outer funnel (3) is filled with a pourable filling material (8). The invention also relates to a set for producing a double-walled graphite funnel according to the invention.
摘要翻译：本发明涉及一种具有上开口（12）和下开口（14）的双壁石墨漏斗（1），其中开口（12,14）具有不同的净宽度并且彼此平行布置，并且其中双层石墨漏斗1由内漏斗4和外漏斗3形成，内漏斗4和外漏斗3由石墨组成，是根据其尺寸和形状设计的，使得所述内漏斗可以容纳在外漏斗（3）中，内漏斗（4）容纳在外漏斗（3）中，使得中间空间（7）为（4）与外漏斗（3）之间形成的中间空间（7）与开口（14）相邻处具有相对小的净宽度，其由内漏斗（4）与内漏斗和外漏斗（3）之间，并且中间空间（7）与开口（12）相邻且具有较大的净宽度，其特征在于，内漏斗（4）和外漏斗（3）之间的中间空间（7）填充有可倾倒的填充材料（8）。本发明还涉及用于生产根据本发明的双壁石墨漏斗的套件。

7. 发明公开

EP3016155A4 METHOD FOR MANUFACTURING N-TYPE SEMICONDUCTOR ELEMENT FOR REFRIGERATION OR HEATING DEVICE 有权
标题翻译：方法生产N-半导体元件进行冷却或加热装置
公开(公告)号：EP3016155A4
公开(公告)日：2016-11-30
申请号：EP14816818
申请日：2014-05-26
申请人： CHEN ZHIMING , GU WEI , SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO LTD
发明人： CHEN ZHIMING , GU WEI
IPC分类号： H01L35/34 , B28D5/00 , C01B19/00 , C30B15/10 , C30B15/14 , C30B29/46
CPC分类号： C30B29/46 , B28D5/00 , C01B19/007 , C30B15/10 , C30B15/14 , H01L35/34
摘要： Disclosed is a method for manufacturing an N-type semiconductor element for a cooling or heating device, the N-type semiconductor element is made of tellurium material, bismuth material and selenium material, firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between the two ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a cooling or heating device of a semiconductor.

8. 发明授权

EP2697413B1 VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON MATERIAL MIT MONO- ODER MULTIKRISTALLINER STRUKTUR 有权
标题翻译：方法和设备材料与单声道和多结晶化结构的生产
公开(公告)号：EP2697413B1
公开(公告)日：2015-06-10
申请号：EP12713636.4
申请日：2012-03-21
申请人： Streicher Maschinenbau GmbH & Co. KG
发明人： KÖCKEIS, Rupert
IPC分类号： C30B15/14 , C30B28/10 , C30B15/08
CPC分类号： C30B15/14 , C30B15/08 , C30B28/10 , Y10S117/91 , Y10T117/1004 , Y10T117/1068

9. 发明授权

EP1840248B1 SEMICONDUCTOR SINGLE CRYSTAL PRODUCING DEVICE AND PRODUCING METHOD 有权转让
标题翻译：方法和制造装置HALF单晶
公开(公告)号：EP1840248B1
公开(公告)日：2015-02-18
申请号：EP05816745.3
申请日：2005-12-13
申请人： SUMCO TECHXIV KABUSHIKI KAISHA
发明人： NODA, Akiko, c/o KOMATSU DENSHI KINZOKU K.K. , IIDA, Tetsuhiro, c/o KOMATSU DENSHI KINZOKU K.K.
IPC分类号： C30B15/00 , C30B15/10 , C30B15/14 , C30B29/06
CPC分类号： C30B15/14 , C30B15/00 , C30B15/10 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/106 , Y10T117/108

10. 发明公开

EP1897977A4 METHOD OF GROWING SILICON SINGLE CRYSTAL 有权
标题翻译：用于生产硅
公开(公告)号：EP1897977A4
公开(公告)日：2014-01-22
申请号：EP05811258
申请日：2005-12-01
申请人： SUMCO CORP
发明人： INAMI SHUICHI , TAKASE NOBUMITSU , KOGURE YASUHIRO , HAMADA KEN , NAKAMURA TSUYOSHI
IPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/14
CPC分类号： C30B29/06 , C30B15/04 , C30B15/14

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式