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1. 发明公开

EP4199119A1 ULTRA-THIN PLASMONIC SOLAR CELLS, METHODS FOR THEIR MANUFACTURE AND USE 审中-实审
公开(公告)号：EP4199119A1
公开(公告)日：2023-06-21
申请号：EP22179899.4
申请日：2018-03-28
申请人： Peafowl Plasmonics AB
发明人： SÁ, Jacinto , FREITAG, Marina
IPC分类号： H01L31/04 , H10K10/00 , H10K30/00 , H10K30/15
摘要： An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver; and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker / linkers. A method for producing said plasmonic solar cell by self-assembly.

2. 发明授权

EP3778570B1 STRONGLY-POLARIZED MOLECULE, AND SINGLE MOLECULE FIELD EFFECT TRANSISTOR PREPARED THEREFROM 有权
公开(公告)号：EP3778570B1
公开(公告)日：2023-10-04
申请号：EP19780897.5
申请日：2019-03-29
发明人： GUO, Xuefeng , XIN, Na , ZHANG, Weining , MENG, Linan
IPC分类号： C07D209/52 , C07C5/00 , C07F15/00 , C07C211/31 , C07D487/04 , C07F15/06 , C07F3/06 , H10K10/00 , H10K10/46 , C07F15/03 , C07C209/52 , C07D333/78 , C07C15/20 , C07C211/30

3. 发明公开

EP4443520A1 SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：EP4443520A1
公开(公告)日：2024-10-09
申请号：EP22898176.7
申请日：2022-08-10
申请人： Kao Corporation
发明人： ASAI Mitsuo
IPC分类号： H01L29/786 , H01L21/336 , H01L29/16 , H10K10/00 , H10K85/00
CPC分类号： C01B32/168 , C01B32/174 , H01L21/304 , H01L29/16 , H01L29/66477 , H01L29/786 , H10K10/40 , H10K85/00 , H10K85/20
摘要： The present disclosure relates to a semiconductor element 1 including: a gate electrode 2; a source electrode 3; a drain electrode 4; a semiconductor layer 5 that is in contact with the source electrode 3 and the drain electrode 4; and a gate insulating layer 6 that insulates the semiconductor layer 5 from the gate electrode 2, in which the semiconductor layer 5 has a network structure of carbon nanotubes, the semiconductor layer 5 is sealed with a sealing layer 8, and the semiconductor layer 5 has an average thickness of 5 nm or less. The sealing layer 8 preferably contains a compound whose SP value calculated using the Fedors method is 15 (cal/cm3)1/2 or less. Also, the sealing layer preferably has a relative permittivity of 5.0 or less. The sealing layer 8 preferably contains one or more selected from the group consisting of a fluorine-based resin, an acrylic resin, a styrene-based resin, a vinyl-based resin, and an olefin-based resin.

4. 发明公开

EP4403548A1 NOVEL COMPOUND FOR CAPPING LAYER, AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME 审中-实审
公开(公告)号：EP4403548A1
公开(公告)日：2024-07-24
申请号：EP22870125.6
申请日：2022-07-22
申请人： Samsung Display Co., Ltd. , Dongjin Semichem Co., Ltd.
发明人： HAM, Ho Wan , AN, Hyun Cheol , KIM, Dong Jun , LEE, Dong Hyun , ANN, Ja Eun , KWON, Dong Yuel , LEE, Sung Kyu , LEE, Tae Jin , PARK, Yeong Rong , LEE, Dae Woong , OH, Il Soo , LEE, Bo Ra , IM, Hyeon Jeong , CHO, Ill Hun
IPC分类号： C07C233/62 , C07C235/40 , C07C323/30 , C07C219/24 , C07D211/62 , C07D401/12 , C07D309/08 , H10K10/00 , H10K77/00
CPC分类号： C07D309/08 , C07C233/62 , C07D401/12 , C07C323/30 , C07C219/24 , C07D211/62 , C07C235/40
摘要： A novel compound for a capping layer, and an organic light emitting device containing the same are disclosed.

5. 发明公开

EP4397154A1 NON-VOLATILE RESISTIVE RANDOM-ACCESS MEMORY AND A MANUFACTURING METHOD THEREOF 审中-实审
公开(公告)号：EP4397154A1
公开(公告)日：2024-07-10
申请号：EP22863738.5
申请日：2022-08-29
申请人： University of South Africa
发明人： VALLABHAPURAPU, Sreedevi , VALLABHAPURAPU, Vijaya Srinivasu , DLAMINI, Zolile Wiseman
IPC分类号： H10K10/00 , H10K85/00 , H01L27/00 , H10K19/00 , H10N70/00 , H10K99/00 , H10K10/80
CPC分类号： G11C13/0014 , H10B63/30 , G11C2213/1520130101

6. 发明公开

EP4369885A1 PEROVSKITE CELL AND PHOTOVOLTAIC MODULE 审中-实审
公开(公告)号：EP4369885A1
公开(公告)日：2024-05-15
申请号：EP22851652.2
申请日：2022-05-10
申请人： Longi Green Energy Technology Co., Ltd.
发明人： XIE, Junjie , WU, Zhao , XU, Chen , LI, Zifeng , LIU, Tong , SUN, Zhuxing
IPC分类号： H10K10/00
CPC分类号： Y02E10/549 , H10K30/80 , H10K30/50 , H10K30/82
摘要： The present application relates to the technical field of solar photovoltaics. Provided are a perovskite cell and a photovoltaic module. The perovskite cell comprises a perovskite light absorption layer, a first carrier transport layer, a second carrier transport layer, a first transparent electrode layer, a second transparent electrode layer, and an optical adjustment layer, wherein the optical adjustment layer is arranged between the second carrier transport layer and the second transparent electrode layer; and the transmittance of the optical adjustment layer for visible light is greater than or equal to a preset transmittance, and the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity. In the present application, the transmittance of an optical adjustment layer for visible light is greater than or equal to a preset transmittance, such that the efficiency of the perovskite cell and the lighting requirement of a building can be ensured; in addition, when the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity, the requirements of the building for heat preservation, refrigeration, etc., can be ensured, thereby reducing the energy loss caused by the requirements of the building for heat preservation and refrigeration.

8. 发明授权

EP3577702B1 METHOD FOR MATERIAL PACKAGING AND DEVELOPING ROTATIONALLY ANISOTROPIC MATERIALS 有权
公开(公告)号：EP3577702B1
公开(公告)日：2024-03-27
申请号：EP18709440.4
申请日：2018-02-02
发明人： PITMAN, Michael , CLEMENT, Teresa J. , STRATIS, Glafkos K. , SAMUEL, Alphonso A. , DELY, Alex , SUNNE, Wayne L.
IPC分类号： H10K10/00 , H10K30/00 , H10K85/60 , H01G9/20

9. 发明授权

EP3577701B1 SOLID STATE MATERIALS WITH TUNABLE DIELECTRIC RESPONSE AND ROTATIONAL ANISOTROPY 有权转让
公开(公告)号：EP3577701B1
公开(公告)日：2024-03-27
申请号：EP18707785.4
申请日：2018-02-02
发明人： PITMAN, Michael , CLEMENT, Teresa J. , STRATIS, Glafkos K. , SAMUEL, Alphonso A. , DELY, Alex , SUNNE, Wayne L.
IPC分类号： H10K10/00 , H10K85/60 , G02F1/00

10. 发明公开

EP4236651A1 A/M/X CRYSTALLINE MATERIAL, PHOTOVOLTAIC DEVICE, AND PREPARATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4236651A1
公开(公告)日：2023-08-30
申请号：EP21963474.8
申请日：2021-12-23
申请人： Contemporary Amperex Technology Co., Limited
发明人： SU, Shuojian , LIU, Zhaohui , WANG, Yandong , WANG, Yanfen , GUO, Yongsheng , CHEN, Guodong , OUYANG, Chuying
IPC分类号： H10K10/00
摘要： This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is ≥80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R avg being ≤75.

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