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    • 8. 发明公开
    • Optical magnetic field sensor using magneto-optical element
    • 使用磁光元件的光磁场传感器
    • EP0935141A3
    • 1999-08-18
    • EP99110502.4
    • 1996-03-14
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Itoh, NobukiMinemoto, HisashiIshiko, DaisukeIshizuka, Satoshi
    • G01R33/02H01F10/24
    • G01R33/0322H01F1/346H01F10/245
    • This invention relates to an optical magnetic field sensor which comprises
      a magneto-optical transducer including a polarizer, a magneto-optical element, and an analyzer sequentially arranged in this order along a direction of a light beam being passed, the analyzer being provided so as to make the direction of a transmitted light beam through the magneto-optical element different from that of the polarizer so that a magnetic field intensity to be measured is detected as an output light intensity; a first lens optically connected via the polarizer to an end of the magneto-optical element; a first optical fiber for inputting a light beam to the first lens; a second lens optically connected via the analyzer to the other end of the magneto-optical element; and a second optical fiber for outputting a light beam from the second lens wherein said first optical fiber/said magneto-optical element and said magneto-optical element and said second optical fiber are optically arranged to constitute a confocal optical system through the first and second lenses, and the first and second optical fibers are arranged substantially in axial symmetry with respect to said magneto-optical element.
    • 光磁场传感器本发明涉及一种光磁场传感器,它包括一个磁光传感器,该传感器包括一个偏振器,一个磁光元件和一个分析器,它们沿着被传送的光束的方向依次排列,分析器被设置成 使通过磁光元件的透射光束的方向不同于偏振器的方向,从而将待测量的磁场强度检测为输出光强度; 第一透镜,经由所述偏振器光学连接到所述磁光元件的端部; 第一光纤,用于向第一透镜输入光束; 第二透镜,经由所述分析器光学连接到所述磁光元件的另一端; 以及用于输出来自第二透镜的光束的第二光纤,其中所述第一光纤/所述磁光元件以及所述磁光元件和所述第二光纤被光学地布置成通过第一和第二光纤构成共焦光学系统 透镜,并且第一和第二光纤相对于所述磁光元件基本上轴对称地设置。
    • 9. 发明公开
    • Magnetostatic wave device
    • 静磁波装置
    • EP0875990A1
    • 1998-11-04
    • EP98105990.0
    • 1998-04-01
    • MURATA MANUFACTURING CO., LTD.
    • Kumatoriya, MakotoUmegaki, Toshihito
    • H03H2/00H01F10/24
    • H03H2/001H01F10/245
    • The magnetostatic wave device comprises a single crystal substrate made of Gd 3 Ga 5 O 12 , a magnetic garnet single crystal film provided on the single crystal substrate and at least one transducer provided on the magnetic garnet single crystal film. The magnetic garnet single crystal film has {111} plane and is made of a material expressed by the formula (YR 1 ) 3 (FeR 2 ) 5 O 12 , where R 1 is at least one element selected from La, Bi, Lu and Gd, R 2 is at least one element selected from Ga, Al, In and Sc and Y and Fe are the main components with respect to R 1 and R 2 . In the magnetostatic wave device, a DC magnetic field is applied to the magnetic garnet single crystal film so that a magnetostatic surface wave propagates on the magnetic garnet single crystal film in a direction of 〈110〉 axis on {111} plane of the magnetic garnet single crystal film.
    • 该静磁波器件包括由Gd3Ga5O12制成的单晶衬底,设置在单晶衬底上的磁性石榴石单晶膜和设置在磁性石榴石单晶膜上的至少一个换能器。 磁性石榴石单晶膜具有{111}面并且由式(YR1)3(FeR2)5O12表示的材料制成,其中R1是选自La,Bi,Lu和Gd中的至少一种元素,R2是 选自Ga,Al,In和Sc中的至少一种元素以及Y和Fe是相对于R1和R2的主要组分。 在静磁波器件中,对磁性石榴石单晶膜施加直流磁场,使得静磁性表面波在磁性石榴石的{111}面上<110>轴方向上在磁性石榴石单晶膜上传播 单晶膜。