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    • 9. 发明公开
    • Improved electrical connections to dielectric materials
    • Verbesserte elektrische Verbindungen zu dielektrischen Materialien。
    • EP0609081A2
    • 1994-08-03
    • EP94300604.9
    • 1994-01-27
    • TEXAS INSTRUMENTS INCORPORATED
    • Gnade,Bruce E.Summerfelt, Scott R.
    • H01L21/3205
    • H01L28/75H01L21/32051H01L28/55H01L28/56H01L28/60Y10S505/818Y10T29/435Y10T29/49128
    • A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48 ), an oxygen gettering layer (e.g. platinum/tantalum mixture 34 ) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36 ) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38 ) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40 ) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
    • 本发明的优选实施方案包括可氧化层(例如钽48),覆盖可氧化层的氧吸气层(例如铂/钽混合物34),覆盖氧吸气层的贵金属层(例如铂36)和 高介电常数材料层(例如钛酸钡锶38)覆盖贵金属层。 所提出的新颖结构提供与高介电常数材料的电连接,而不存在电流结构的缺点。 氧吸气层控制氧扩散,使下电极或下电极/衬底界面处的电阻层的形成最小化。 吸氧层用作氧的吸气位置,其中氧氧化层的反应性金属部分,使层的贵金属部分保持完整。 虽然形成的氧化物/低氧化物(例如五氧化二铝40)是电阻的,但是它们分散在贵金属基质内,留下从层的顶部到底部的导电路径。 本发明提供一种用于高介电常数材料的稳定且导电的电极,同时使用标准集成电路材料来促进和节约制造工艺。