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1. 发明授权

EP1920883B1 ELECTRON BEAM ASSISTED EEM METHOD 失效转让
标题翻译：电子助EEM程序
公开(公告)号：EP1920883B1
公开(公告)日：2013-05-22
申请号：EP06782248.6
申请日：2006-08-03
申请人： Mori, Yuzo , JTEC Corporation
发明人： Mori, Yuzo
IPC分类号： B24B1/00 , B24B19/22 , B24B31/06 , B24B37/00 , B24B31/116 , B24C1/08 , G02B5/08 , G21K1/06
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908

2. 发明公开

EP1920883A4 ELECTRON BEAM ASSISTED EEM METHOD 失效转让
标题翻译：电子助EEM程序
公开(公告)号：EP1920883A4
公开(公告)日：2011-06-15
申请号：EP06782248
申请日：2006-08-03
申请人： MORI YUZO
发明人： MORI YUZO
IPC分类号： B24B1/00 , B24B19/22 , B24B31/06 , B24B31/116 , B24B37/00 , B24C1/08 , G02B5/08 , G21K1/06
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908

3. 发明公开

EP1920883A1 ELECTRON BEAM ASSISTED EEM METHOD 失效转让
标题翻译： ELEKTRONENSTRAHLUNTERSTÜTZTESEEM-VERFAHREN
公开(公告)号：EP1920883A1
公开(公告)日：2008-05-14
申请号：EP06782248.6
申请日：2006-08-03
申请人： Mori, Yuzo
发明人： Mori, Yuzo
IPC分类号： B24B1/00 , B24B19/22 , B24B31/06 , B24B37/00
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908
摘要： To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.
摘要翻译：提供一种能够实现包括玻璃陶瓷材料的工件的超精密加工的电子束辅助EEM方法，其中在加工过程中以加工速度彼此不同的至少两种组分材料以精细混合状态存在，并且表面状态不均匀，表面粗糙度为0.2〜0.05nm RMS。 EEM方法包括一个工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过细颗粒与细颗粒之间的化学相互作用将微粒与化学键合的工作面上的原子除去工作面界面。工件包括以精加工的混合状态存在并且在加工过程中加工速度彼此不同的至少两种组分材料。在将工件的工作面暴露于电子束进行变形，使得工作面中的表面层部的加工速度基本均匀的情况下，通过工作过程进行超精密平滑化。

4. 发明公开

EP1368827A2 ELECTROCHEMICAL METHODS FOR POLISHING COPPER FILMS ON SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：电化学方法进行抛光铜膜在半导体基板上
公开(公告)号：EP1368827A2
公开(公告)日：2003-12-10
申请号：EP02732162.9
申请日：2002-01-15
申请人： Steag Cutek Systems, Inc.
发明人： ZHU, Mei c/o Steag Cutek Systems Inc. , IVANOV, Igorc/o Steag Cutek Systems Inc. , TING, Chiu, H. c/o Steag Cutek Systems Inc.
IPC分类号： H01L21/3213
CPC分类号： H01L21/32115 , C25D3/38 , C25D5/18 , C25F3/02 , H01L21/7684 , Y10S451/907 , Y10S451/908
摘要： Methods for electrochemically polishing copper films on semiconductor substrates use an alkaline solution with a pH in the range of about 8.0 to 10.5. A constant current density of from 53.82 to 1076.36 amperes per square meter (5 to 100 amperes per square foot) is applied to an electrochemical cell formed by an electrode, the alkaline solution and the copper film. Copper is removed at a rate of from 500 to 10,000 angstroms per minute. The end point for the electro-polishing is detected by a sudden change in applied voltage. The alkaline polishing solution may also contain copper film. Furthermore, this copper deposition will occur selectively on the exposed copper surface but not on the exposed barrier layer surface. Hence, the method can compensate for dishing and erosion by re-depositing copper in regions after too much copper was removed from those regions.

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