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1. 发明公开

EP1274167A2 Surface acoustic wave element and manufacturing method of the same 审中-公开
标题翻译： AkustischesOberflächenwellenelementund Verfahren zur Herstellung desselben
公开(公告)号：EP1274167A2
公开(公告)日：2003-01-08
申请号：EP02291685.2
申请日：2002-07-05
申请人： Murata Manufacturing Co., Ltd.
发明人： Watanabe, Hiroki, c/o Intellectual Property Dept. , Ieki, Hideharu, c/o Intellectual Property Dept.
IPC分类号： H03H9/145 , H03H9/05
CPC分类号： H03H9/059 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16225 , H03H9/02944 , H03H9/02992 , H03H9/14538
摘要： There is provided an inexpensive surface acoustic wave apparatus assembled employing a flip chip technique, and capable of reducing ohmic loss by reducing electrode electrical resistance and of operating at a high-frequency range. A surface acoustic wave apparatus has a surface acoustic wave element (54) bonded to a package (11) by employing a flip chip technique. In the surface acoustic wave element (54), on a piezoelectric substrate (42), an IDT electrode (43), bus bar electrodes (44,45), reflector electrodes (46,47), relay electrodes (48,49), and electrode pads (50,51) are formed. Conductive films (Xb,Xd,Xe) are formed on the electrode pads (50,51) as a first metallic film while the conductive films (Xb,Xd,Xe) are also formed on at least any of the bus bar electrodes (44,45) and the relay electrodes (48,49) as a second metallic film.
摘要翻译：提供了一种使用倒装芯片技术组装的便宜的表面声波装置，并且能够通过减小电极电阻并在高频范围内操作来降低欧姆损耗。表面声波装置具有通过使用倒装芯片技术而与封装（11）接合的表面声波元件（54）。在表面声波元件（54）中，压电基板（42），IDT电极（43），母线电极（44,45），反射器电极（46,47），中继电极（48,49）并形成电极焊盘（50,51）。导电膜（Xb，Xd，Xe）形成在作为第一金属膜的电极焊盘（50,51）上，而导电膜（Xb，Xd，Xe）也形成在至少任何汇流条电极（44）上，45）和作为第二金属膜的中继电极（48,49）。

2. 发明授权

EP0100503B1 High frequency narrow-band pass multi-mode filter 失效
标题翻译：高频窄带多通道滤波器
公开(公告)号：EP0100503B1
公开(公告)日：1990-12-12
申请号：EP83107258.2
申请日：1983-07-23
申请人： TOYO COMMUNICATION EQUIPMENT CO.,LTD.
发明人： Nakazawa, Yuzo Toyo Comm. Equipment Co. Ltd. , Ono, Kazuo Toyo Communication Equipment Co. Ltd. , Tanaka, Masaki Toyo Comm. Equipment Co. Ltd. , Morita, Takao Toyo Comm. Equipment Co. Ltd. , Kurosaki, Takefumi Toyo Comm. Equipment Co. Ltd.
IPC分类号： H03H9/64 , H03H9/145
CPC分类号： H03H9/6433 , H03H9/02944 , H03H9/6463

3. 发明公开

EP0176786A2 Wandler für SAW-Anordnung 失效
标题翻译：传感器的SAW器件。
公开(公告)号：EP0176786A2
公开(公告)日：1986-04-09
申请号：EP85111041.1
申请日：1985-09-02
申请人： Epprecht, Georg, Prof., Dr.
发明人： Ebneter, Josef
IPC分类号： H03H9/145 , H03H9/64
CPC分类号： H03H9/1452 , H03H9/02755 , H03H9/02944 , H03H9/14505 , H03H9/1455 , H03H9/6426
摘要： Richtwandler für SAW-Filter auf einem piezoelektrischen Substrat. Der Wandler (Fig. 3a) besteht aus mehreren Gruppen (Ga, Gb ...), die halbgruppenweise (Gal, Ga2...) mit Sammelschienen (Phl, Ph2) für zwei Phasen (1, 2) verbunden sind. Abwechselnd sind diese Halbgruppen derart auf zwei oder mehr Kanäle (K1, K2...) verteilt, daß die Fingerelektroden jeder Phase (1, 2)- über alle Kanäle betrachtet - eine mehr oder weniger lückenlose Reihe bilden. Zu jedem Kanal gehört eine für beide Phasen 1.2 gemeinsame, mäandrierende Sammelschiene M.
摘要翻译：单向换能器的压电基片上的SAW滤波器。所述换能器（图3a）由若干组（GA，GB ...），半组（GA1，GA2 ...）与汇流条（PH1，PH2）为两个相的（1,2）连接。可替换地，这些半组被分布在这样的方式在两个或更多个通道（K1，K2 ...），在各相的所述指状电极（1，2） - 观察在所有的信道 - 形成更多或更少的连续系列。每个通道包括两个阶段1,2共同的，蜿蜒的母线M.

4. 发明公开

EP1646144A3 Surface acoustic wave element and method of manufacturing the same 审中-公开
标题翻译：用于产生相同的表面声波元件和方法的
公开(公告)号：EP1646144A3
公开(公告)日：2006-08-16
申请号：EP05021677.9
申请日：2005-10-04
申请人： ALPS ELECTRIC CO., LTD.
发明人： Fujimoto, Haruhiko Alps Electric Co., Ltd. , Ikeda, Takeshi Alps Electric Co., Ltd. , Meguro, Toshihiro Alps Electric Co., Ltd. , Waga, Satoshi Alps Electric Co., Ltd. , Ozaka, Kyosuke Alps Electric Co., Ltd.
IPC分类号： H03H3/08 , H03H9/02
CPC分类号： H03H9/14541 , H03H3/08 , H03H9/02818 , H03H9/02834 , H03H9/02929 , H03H9/02944
摘要： A surface acoustic wave element having power resistance is provided. In the surface acoustic wave element, upper dispersion preventing layers and side dispersion preventing layers each made of metal nitride are provided between interdigital transducer electrode portions and an insulating layer. Further, lower dispersion preventing layers made of metal nitride are provided between the interdigital transducer electrode portions and a piezoelectric substrate. If dispersion preventing layers made of 'metal nitride' are provided between the interdigital transducer electrode portions and the insulating layer, even though the insulating layer is formed, it is possible to prevent voids from being generated in the interdigital transducer electrode portions, unlike a related art. Therefore, the power resistance can be improved.

5. 发明公开

EP0740411A1 ACOUSTIC WAVE FILTER 失效
标题翻译：声波滤波器
公开(公告)号：EP0740411A1
公开(公告)日：1996-10-30
申请号：EP95936764.0
申请日：1995-11-10
申请人： FUJITSU LIMITED
发明人： NISHIHARA, Tokihiro Fujitsu Limited , SATOH, Yoshio Fujitsu Limited , UCHISHIBA, Hidema Fujitsu Limited , MATSUDA, Takashi Fujitsu Limited , IKATA, Osamu Fujitsu Limited
IPC分类号： H03H9/64 , H03H9/145
CPC分类号： H03H9/6483 , H03H9/02944 , H03H9/02984 , H03H9/145 , H03H9/64
摘要： In an acoustic wave filter constituted by arranging resonators having resonance characteristics or antiresonance characteristics in a ladder form, the resonator on the parallel arm in the first stage on the input side has a large flowing-in current and its service life is shortened due to the heat generated from its thin-film wiring. In order to prevent the shortening of the service life of the resonator, bonding wires (33, 31) are bonded to connecting electrodes (130, 131) for connecting one end of each of comb-teeth-like electrodes constituting the resonator or bonded to lead-out conductor (130-1) extended in the longitudinal direction of the connecting electrodes at positions on both sides of the center line C1 of the comb-teeth-like electrodes. The wires (33 and 31) may be bonded on the center line C1, but it is preferable to bond the wires (33 and 31) symmetrically with respect to the center line C1. It is preferably that the lengths of the comb-teeth-like electrodes are larger than the widths of the electrodes.

6. 发明公开

EP0140449A3 Surface acoustic wave device 失效
标题翻译：表面声波器件
公开(公告)号：EP0140449A3
公开(公告)日：1987-01-21
申请号：EP84201539
申请日：1984-10-25
申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED , N.V. Philips' Gloeilampenfabrieken
发明人： Schofield, John
IPC分类号： H03H09/64
CPC分类号： H03H9/02685 , H03H9/02637 , H03H9/02913 , H03H9/02944 , H03H9/02992 , H03H9/14538
摘要： A low insertion loss surface acoustic wave filter in which withdrawal weighted launching and output transducers 20, 40 are acoustically coupled by two high efficiency reflective multistrip couplers 6, 6'. To reduce the insertion loss, the inner bus bars 21, 41, are reduced in width so as to reduce the dead space 12 in the coupler. This makes it impossible to form a reliable wire bond connection to the inner bus bars which are therefore connected via a conducting path across the propagation path at the ends of the transducers. Further reduction in the widths of the inner bus bars and consequent increase in resistive losses are offset by several connections to a further bus 23, 43 via groups 25 of dummy electrodes arranged at null points in the weighting pattern.
摘要翻译：一种低插入损耗表面声波滤波器，其中提取加权发射和输出换能器20,40通过两个高效反射多带耦合器6,6'声学耦合。为了降低插入损耗，内部汇流条21,41的宽度减小以减小联接器中的死空间12。这使得不可能与内部母线形成可靠的导线接合连接，因此内部母线经由穿过传感器端部处的传播路径的导电路径连接。内部母线的宽度的进一步减小和随之而来的电阻损耗的增加被通过在加权图案中的零点处布置的虚拟电极组25的多个连接到另外的总线23,43来抵消。

7. 发明授权

EP1635458B1 Surface acoustic wave device 有权
标题翻译：声表面波器件
公开(公告)号：EP1635458B1
公开(公告)日：2011-12-14
申请号：EP04725791.0
申请日：2004-04-05
申请人： MURATA MANUFACTURING CO., LTD.
发明人： HADA, Takuo c/o Murata Manufacturing Co., Ltd. , NAKAO, Takeshi c/o Murata Manufacturing Co., Ltd. , KADOTA, Michio c/o Murata Manufacturing Co., Ltd. , NAKAGAWARA, Osamu c/o Murata Manufacturing Co.Ltd.
IPC分类号： H03H9/145 , H03H9/25 , H03H9/02
CPC分类号： H03H9/25 , H03H9/009 , H03H9/02094 , H03H9/02897 , H03H9/02929 , H03H9/02944 , H03H9/14538 , H03H9/6483
摘要： A surface acoustic wave device which uses an interdigital electrode mainly containing Cu and is significantly improved in power resistance. The surface acoustic wave device (1) comprises a piezoelectric substrate (2), and an interdigital electrode (3) formed on the piezoelectric substrate (2), wherein the interdigital electrode (3) has a main electrode layer (3a) consisting of Cu or an alloy mainly containing Cu, and a close-contact layer (3b) disposed between the main electrode layer (3a) and the piezoelectric substrate (2) and mainly containing NiCr, or a close-contact layer (3b) mainly containting Ti and having a film thickness of 18-60 nm.

8. 发明公开

EP1883158A4 ELASTIC BOUNDARY WAVE DEVICE 审中-公开
标题翻译：弹性边界波装置
公开(公告)号：EP1883158A4
公开(公告)日：2009-02-18
申请号：EP06732553
申请日：2006-05-12
申请人： MURATA MANUFACTURING CO
发明人： KANDO HAJIME
IPC分类号： H03H9/02 , H03H9/145
CPC分类号： H03H9/02834 , H03H9/0222 , H03H9/02944 , H03H9/14532 , H03H9/14541
摘要： It is possible to provide an elastic boundary wave device capable of suppressing increase of conductor resistance and obtain a small delay time temperature coefficient eve when a frequency is increased. An elastic boundary wave device (10) includes an IDT (13) arranged between a first medium (11) and a second medium (12). The IDT (13) is divided into two portions in the thickness direction. The plane between the two portions serves as a boundary plane. A sound velocity of an elastic boundary wave when the IDT (13) is configured by setting energy of an elastic boundary wave of the first medium (11) side from the boundary to E1 and energy of an elastic boundary wave of the second medium (12) side from the boundary to E2 is made identical to a sound velocity of an elastic boundary wave when the IDT (13) is configured by using only a conductor having the maximum density constituting the IDT (13) as follows. Under the condition that the IDT (13) is configured by only a conductor layer having the maximum density, the elastic boundary wave energy satisfies E1/E2

9. 发明公开

EP1635458A4 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：面波成分
公开(公告)号：EP1635458A4
公开(公告)日：2008-04-30
申请号：EP04725791
申请日：2004-04-05
申请人： MURATA MANUFACTURING CO
发明人： HADA TAKUO , NAKAO TAKESHI , KADOTA MICHIO , NAKAGAWARA OSAMU
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H03H9/64
CPC分类号： H03H9/25 , H03H9/009 , H03H9/02094 , H03H9/02897 , H03H9/02929 , H03H9/02944 , H03H9/14538 , H03H9/6483
摘要： A surface acoustic wave device which uses an interdigital electrode mainly containing Cu and is significantly improved in power resistance. The surface acoustic wave device (1) comprises a piezoelectric substrate (2), and an interdigital electrode (3) formed on the piezoelectric substrate (2), wherein the interdigital electrode (3) has a main electrode layer (3a) consisting of Cu or an alloy mainly containing Cu, and a close-contact layer (3b) disposed between the main electrode layer (3a) and the piezoelectric substrate (2) and mainly containing NiCr, or a close-contact layer (3b) mainly containting Ti and having a film thickness of 18-60 nm.

10. 发明公开

EP1883158A1 ELASTIC BOUNDARY WAVE DEVICE 审中-公开
标题翻译： ELASTISCHE GRENZWELLENVORRICHTUNG
公开(公告)号：EP1883158A1
公开(公告)日：2008-01-30
申请号：EP06732553.0
申请日：2006-05-12
申请人： MURATA MANUFACTURING CO., LTD.
发明人： KANDO, Hajime c/o MURATA MANUFACTURING CO., LTD.
IPC分类号： H03H9/145
CPC分类号： H03H9/02834 , H03H9/0222 , H03H9/02944 , H03H9/14532 , H03H9/14541
摘要： An elastic boundary wave device that can prevent an increase in the conductor resistance at higher frequency and have a small temperature coefficient of delay is provided. An elastic boundary wave device (10) includes an IDT (13) including laminated conductor layers disposed between a first medium (11) and a second medium (12), wherein a plane that halves the IDT (13) in the thickness direction is taken as an interface, the energy of an elastic boundary wave present on the side of the first medium (11) of the interface is denoted as E1, and the energy of an elastic boundary wave present on the side of the second medium (12) of the interface is denoted as E2, and wherein if the IDT (13) were composed only of a conductor having the highest density among the laminated conductor layers of the IDT (13), when the energy of an elastic boundary wave present on the side of the first medium (11) of the interface is denoted as E1' and the energy of an elastic boundary wave present on the side of the second medium (12) of the interface is denoted as E2', the energies of an elastic boundary wave would satisfy the relationship of E1/E2
摘要翻译：提供一种可以防止在较高频率下导体电阻增加且具有较小的延迟温度系数的弹性边界波装置。弹性边界波装置（10）包括设置在第一介质（11）和第二介质（12）之间的层叠导体层的IDT（13），其中在厚度方向上将IDT（13）缩小一半的平面作为界面，存在于界面的第一介质（11）侧的弹性边界波的能量表示为E1，弹性边界波的能量存在于第二介质（12）侧界面被表示为E2，并且其中如果IDT（13）仅由IDT（13）的层叠导体层中具有最高密度的导体构成，则当弹性边界波的能量存在于接口的第一介质（11）表示为E1'，存在于界面的第二介质（12）侧的弹性边界波的能量表示为E2'，弹性边界波的能量满足E1 / E2

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