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1. 发明公开

EP1500176A1 THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE 有权
标题翻译：具有可控PLASMON禁闭波导TMC半导体激光器
公开(公告)号：EP1500176A1
公开(公告)日：2005-01-26
申请号：EP03744952.7
申请日：2003-03-24
申请人： INFM Istituto Nazionale per la Fisica della Materia
发明人： TREDICUCCI, Alessandro , BELTRAM, Fabio , BEERE, Harvey, Edward , DAVIES, Alexander, Giles , KOEHLER, Ruedeger , LINFIELD, Edmund, Harold
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/1046 , H01S5/2054 , H01S5/22 , H01S5/3213 , H01S5/3402
摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (A) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12) , and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by, a second interface (16a, 16b) .The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to J the first and second interfaces (16a, 16b) , outside the layer (16) , and substantially a suppression of the plasmon modes, inside the layer.

2. 发明公开

EP2988381A3 NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER 有权
标题翻译：氮化物半导体量子级联激光器
公开(公告)号：EP2988381A3
公开(公告)日：2016-07-06
申请号：EP15180589.2
申请日：2015-08-11
申请人： RIKEN
发明人： TERASHIMA, Wataru , HIRAYAMA, Hideki
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , H01S5/0213 , H01S5/042 , H01S5/2054 , H01S5/3407 , H01S5/34333 , H01S2301/02
摘要： A THz-QCL element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures 32 into a superlattice. Each unit structure includes a first barrier layer B1, a first well layer W1, a second barrier layer B2, and a second well layer W2 disposed in this order, an energy level structure for electrons under a bias electric field has a mediation level L1, an upper lasing level L3, and a lower lasing level L2. The energy value of the mediation level is close to the energy value of one of levels, out of an upper lasing level and a lower lasing level each belonging to one of the unit structure and the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. For example, the crystal is formed of GaN/AlGaN, the frequency of emitted electromagnetic waves is any frequency within a range of 5 THz to 20 THz, and the unit structures are fabricated by MBE or MOCVD techniques.

3. 发明公开

EP4443674A1 BOTTOM SURFACE EMITTING VERTICAL CAVITY SURFACE EMITTING LASER 审中-实审
公开(公告)号：EP4443674A1
公开(公告)日：2024-10-09
申请号：EP24166009.1
申请日：2024-03-25
申请人： II-VI Delaware, Inc.
发明人： BARBAROSSA, Giovanni , TATARCZAK, Anna , KOCOT,, Christopher
IPC分类号： H01S5/183 , H01S5/20 , H01S5/30 , H01S5/42 , H01S5/042 , H01S5/02
CPC分类号： H01S5/3095 , H01S5/423 , H01S5/18325 , H01S5/18338 , H01S5/18305 , H01S5/0208 , H01S5/04257 , H01S5/2054 , H01S2301/1620130101 , H01S2301/1820130101 , H01S5/18383
摘要： This disclosure describes a bottom surface emitting vertical cavity surface emitting laser (BSE VCSEL) with a lithographically defined aperture. The BSE VCSEL may be oxide-free. Two contacts are located above a substrate. An aperture and one or more active regions are located between two DBRs. A first contact is coupled to the substrate and the first DBR, which is below the aperture. A second contact is coupled to the second DBR, which is above the aperture.

4. 发明公开

EP2988381A2 NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER 有权
标题翻译： NITRIDHALBLEITER-QUANTENKASKADENLASER
公开(公告)号：EP2988381A2
公开(公告)日：2016-02-24
申请号：EP15180589.2
申请日：2015-08-11
申请人： RIKEN
发明人： TERASHIMA, Wataru , HIRAYAMA, Hideki
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , H01S5/0213 , H01S5/042 , H01S5/2054 , H01S5/3407 , H01S5/34333 , H01S2301/02
摘要： A THz-QCL element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures 32 into a superlattice. Each unit structure includes a first barrier layer B1, a first well layer W1, a second barrier layer B2, and a second well layer W2 disposed in this order, an energy level structure for electrons under a bias electric field has a mediation level L1, an upper lasing level L3, and a lower lasing level L2. The energy value of the mediation level is close to the energy value of one of levels, out of an upper lasing level and a lower lasing level each belonging to one of the unit structure and the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. For example, the crystal is formed of GaN/AlGaN, the frequency of emitted electromagnetic waves is any frequency within a range of 5 THz to 20 THz, and the unit structures are fabricated by MBE or MOCVD techniques.
摘要翻译：可获得以未开发频率工作的THz-QCL元件。氮化物半导体的晶体用于将重复的单元结构32组合成超晶格。每个单位结构包括依次设置的第一势垒层B1，第一阱层W1，第二势垒层B2和第二阱层W2，用于偏置电场下的电子的能级结构具有调解电平L1，上激光级L3和下激光级L2。中介级的能量值接近于与上述相关的单位结构和其他单位结构中的一个相邻的上部激光水平和下部激光水平之一的能级值，并且与至少能量值由晶体展示的纵向光学（LO）声子的能量值。例如，晶体由GaN / AlGaN形成，发射电磁波的频率为5THz至20THz范围内的任何频率，单位结构采用MBE或MOCVD技术制造。

5. 发明授权

EP1500176B1 THz SEMICONDUCTOR LASER INCORPORATING A CONTROLLED PLASMON CONFINEMENT WAVEGUIDE 有权
标题翻译：具有可控PLASMON禁闭波导TMC半导体激光器
公开(公告)号：EP1500176B1
公开(公告)日：2006-06-07
申请号：EP03744952.7
申请日：2003-03-24
申请人： Consiglio Nazionale delle Ricerche - INFM Istituto Nazionale per la Fisica della Materia
发明人： TREDICUCCI, Alessandro , BELTRAM, Fabio , BEERE, Harvey, Edward , DAVIES, Alexander, Giles , KOEHLER, Ruedeger , LINFIELD, Edmund, Harold
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/1046 , H01S5/2054 , H01S5/22 , H01S5/3213 , H01S5/3402
摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (A) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12) , and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by, a second interface (16a, 16b) .The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to J the first and second interfaces (16a, 16b) , outside the layer (16) , and substantially a suppression of the plasmon modes, inside the layer.

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