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    • 1. 发明公开
    • VOLTAGE REGULATOR
    • 电压稳压器
    • EP3012706A4
    • 2017-04-05
    • EP14813171
    • 2014-05-29
    • SII SEMICONDUCTOR CORP
    • TSUZAKI TOSHIYUKI
    • G05F1/56G05F1/573G05F1/575H02M1/32H02M3/158
    • G05F1/573G05F1/575H02M1/32
    • Provided is a voltage regulator in which an output current can be controlled stably and accurately to an overcurrent protection set value without the need of providing a phase compensation circuit including an element having a large area. The voltage regulator includes a constant voltage control circuit including: a first differential amplifier circuit for comparing a first reference voltage and a feedback voltage to each other; and an output transistor to be controlled by an output voltage of the first differential amplifier circuit, and an overcurrent protective circuit including: a resistor for measuring the output current; a second differential amplifier circuit for measuring a difference between voltages at both terminals of the resistor; a comparator for comparing an output voltage of the second differential amplifier circuit and a second reference voltage to each other; and a switch to be controlled by a detection signal of the comparator. When the output current equal to or larger than an overcurrent protection set value flows, the output voltage of the second differential amplifier circuit is input to the first differential amplifier circuit via the switch, to thereby switch control of the output transistor from control based on the constant voltage control circuit to control based on the overcurrent protective circuit.
    • 3. 发明公开
    • Schutzschaltung für LEDs
    • 用于LED保护电路
    • EP2843497A2
    • 2015-03-04
    • EP14164203.3
    • 2014-04-10
    • Zumtobel Lighting GmbH
    • Gajdos, David
    • G05F1/573H05B33/08H05B37/04
    • G05F1/573H05B33/0827H05B33/0893Y02B20/341
    • Die vorliegende Erfindung betrifft eine Schutzschaltung 41, 42, 43 und eine Schaltungsanordnung 10 mit wenigstens einer Schutzschaltung 41, 42, 43. Die Schutzschaltung 41, 42, 43 ist wenigstens einem LED-Strang 21, 22, 23 zugeschaltet und dazu geeignet, im Falle einer Unterbrechung des LED-Strangs 21, 22, 23 wenigstens einen Teil des für diesen LED-Strang 21, 22, 23 vorgesehenen Stroms aufzunehmen. Insbesondere wird der aufgenommene Teil des Stroms dabei über einen dem LED-Strang 21, 22, 23 parallelen Überbrückungspfad der Schutzschaltung 41, 42, 43 geleitet. Die LEDs der anderen LED-Stränge 21, 22, 23 können vor einer Stromerhöhung aufgrund der Unterbrechungen geschützt werden.
    • 本发明涉及一种保护电路41,42,43和电路系统10具有至少一个保护电路41,42,43,保护电路41,42,43的至少一个LED链21,22,切换23,并适于在的情况下 LED链21,22的中断,23接收的至少一部分对于该LED链21,22,23提供电流。 特别地,当前的记录部分是在这种情况下,该LED链21,22,保护电路41,42,通过第43次的23并行旁通路径 其它LED串21,22的发光二极管,23可由于中断被保护免受功率增加。
    • 5. 发明公开
    • Direct-current stabilization power supply device
    • Gleichstromstabilisierungs-Stromversorgungsschaltung
    • EP0994401A2
    • 2000-04-19
    • EP99120266.4
    • 1999-10-11
    • SHARP KABUSHIKI KAISHA
    • Warita, HirohisaNakajima, Akio
    • G05F1/573
    • G05F1/573G05F1/5735
    • A current detection resistance such as a metal resistance is formed in series with a power transistor, and in response to an output voltage of the current detection resistance, an overcurrent protective circuit performs an overcurrent suppressing operation with high accuracy without being affected by irregularity of a current multiplication factor, etc.; thus, it is possible to realize a smaller chip area so as to reduce the cost. Furthermore, a short-circuit protective circuit returns a terminal voltage of a referenced resistance, that appears in accordance with a partial pressure value of an output voltage, at the transistor, a partial pressure resistance, and a current mirror circuit. And the short-circuit protective circuit controls a potential of a base resistance and suppresses a base current. Hence, it is not necessary to dispose the transistor for suppressing a current between base lines, so that a low-voltage operation can be realized. In a direct-current stabilization power supply device having a two-chip structure of a PNP power transistor and a control IC, it is possible to achieve a smaller chip area and a low-voltage operation.
    • 与功率晶体管串联地形成诸如金属电阻的电流检测电阻,并且响应于电流检测电阻的输出电压,过电流保护电路以高精度执行过电流抑制操作,而不会受到不规则性的影响 当前倍增因子等; 因此,可以实现更小的芯片面积,从而降低成本。 此外,短路保护电路返回根据晶体管,分压电阻和电流镜电路的输出电压的分压出现的参考电阻的端子电压。 并且短路保护电路控制基极电阻的电位并抑制基极电流。 因此,不需要设置用于抑制基线之间的电流的晶体管,从而可以实现低电压操作。 在具有PNP功率晶体管和控制IC的双芯片结构的直流稳压电源装置中,可以实现较小的芯片面积和低电压工作。
    • 7. 发明公开
    • CURRENT PROTECTION METHOD AND APPARATUS AND CURRENT PROTECTED LOW DROPOUT VOLTAGE CIRCUITS
    • 方法和设备断电保护及断电受保护稳压器低压WASTE
    • EP0750803A4
    • 1998-01-07
    • EP95912044
    • 1995-03-01
    • MAXIM INTEGRATED PRODUCTS
    • BINGHAM DAVID
    • G05F1/573H02H9/02H02H3/24
    • G05F1/573H02H9/025
    • A current limited low dropout voltage circuit for coupling between first and second power supply terminals and an output terminal for providing a current limited low dropout voltage having a MOS pass transistor (P1) coupled in series between the first power supply terminal and the output terminal, a drive circuit (P2-P5) coupled to the gate of the MOS pass transistor, circuitry for limiting the gate-source voltage of the MOS pass transistor to limit the maximum current therethrough to a first maximum current level when the voltage between the second power supply terminal and the output terminal is less than a predetermined value, and circuitry for limiting the gate-source voltage of the MOS pass transistor to limit the maximum current therethrough to a second maximum current level when the source to drain voltage of the MOS pass transistor is greater than a predetermined voltage difference and the voltage between the output terminal and the second power supply terminal is greater than the predetermined value, the second maximum current level being greater than the first maximum current level.
    • 用于第一和第二电源端子之间和输出端子耦合的电流限制低压差电压电路,用于提供具有耦合在所述第一电源端子和输出端子,一个驱动装置之间串联的MOS传输晶体管的电流限制低压差电压输出 电路耦合到所述MOS传输晶体管的栅极,用于限制所述MOS传输晶体管的栅 - 源电压的电路,以限制通过第一最大电流电平的最大电流有当第二电源端子和输出端子之间的电压是 小于一个预定值,并且电路,用于限制所述MOS传输晶体管的栅极 - 源极电压通过至第二最大电流电平,以限制最大电流有当源极到漏极的MOS传输晶体管的电压比规定的电压差大 和所述输出端子和所述第二电源端之间的电压大于所述PR更大 edetermined值,所述第二最大电流电平高于所述第一最大电流电平。
    • 8. 发明公开
    • Protection circuit and method for power transistors, voltage regulator using the same
    • Schutzschaltung und VerfahrenfürLeistungstransistor sowie diese verwendender Spannungsregler
    • EP0713163A1
    • 1996-05-22
    • EP94830535.4
    • 1994-11-17
    • CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNOSGS-THOMSON MICROELECTRONICS S.r.l.
    • Colletti, PaoloBontempo, GregorioPulvirenti, FrancescoGariboldi, Roberto
    • G05F1/573
    • G05F1/573
    • The purpose of the present invention is to supply a method and a circuit simple and accurate enough to protect at least one transistor against exceeding a complex limit implying processing of multiple electrical quantities associated with said transistor.
      Since in many practical cases said complex limit corresponds to the product of at least two quantities, typically a current and a voltage, the circuit in accordance with the present invention generates electrical signals basically proportional to said quantities, multiplies them, compares the product with a reference signal corresponding to the limit placed on the transistor and acts on the transistor in such a way that said limit is not exceeded.
      Advantageously the multiplication of currents can be provided simply by means of connection in series of bipolar transistor junctions at which said currents are supplied to the respective emitters. In this case it is additionally advantageous to generate the reference signal by means of connection in series of the bipolar transistor junctions in such a manner as to have an analogous behaviour of the multiplier and the generator.
    • 本发明的目的是提供足够简单且准确的方法和电路,以保护至少一个晶体管免受超过复数限制,这意味着与所述晶体管相关联的多个电量的处理。 由于在许多实际情况下,所述复数极限对应于至少两个量(通常为电流和电压)的乘积,所以根据本发明的电路产生与所述量基本成比例的电信号,将其乘以它们,将产品与 参考信号对应于放置在晶体管上的极限,并以不超过所述极限的方式作用在晶体管上。 有利地,电流的乘法可以简单地通过串联双极晶体管结的连接来提供,在该点处,所述电流被提供给相应的发射极。 在这种情况下,另外有利的是通过串联双极晶体管结的连接来产生参考信号,使得具有乘法器和发生器的类似行为。
    • 10. 发明公开
    • Strombegrenzungsschaltung
    • 限流电路
    • EP0477165A3
    • 1993-08-25
    • EP91890211.5
    • 1991-09-16
    • E.Z.I. ENTWICKLUNGSZENTRUM FÜR INDUSTRIEELEKTRONIK GESELLSCHAFT m.b.H.
    • Tüü, MiklosSimcic, Christian
    • H02H9/02G05F1/573
    • G05F1/573G05F1/577
    • Die Regeleinrichtng (1) einer Strombegrenzungsschaltung weist in einem parallel zur Versorgungsspannungsquelle (U) liegenden Zweig (3) eine über einen Referenzspannungseingang (U ref ) gesteuerte Referenzstromquelle (4) und eine dazu in Serie liegende rückgekoppelte Stromquelle (5) auf. Ein Stellglied (2) weist zumindest zwei parallel geschaltete Laststromquellen (6) auf, die in Serie zur Last (R) angeordnet sind und an denen die von der rückgekoppelten Stromquelle (5) bereitgestellte Referenzspannung (U G ) liegt. Entsprchend der Anzahl (n) der ausgangsseitig parallel geschalteten Laststromquellen (6) ist der Ausgangsstrom um das (n+1)fache größer als der von der Referenzstromquelle gelieferte Referenzstrom (I ref ), wobei die Reaktionszeit nur von der Schaltschnelligkeit einer der parallel geschalteten Stromquellen (5, 6) bestimmt ist.
    • 所述Regeleinrichtng(1)的电流限制电路包括并联躺在供电电压源(U)分支(3)通过在受控的参考电流源(4)和一个位于在串联反馈电流源的参考电压输入(V REF)(5)。 的致动器(2)具有至少两个并联连接的负载的电流源(6),其与所述负载(R)和在由反馈电流源(5)的参考电压(UG)位于提供了串联布置。 Entsprc​​hend并联连接与所述输出电流中的第(n + 1)倍比由参考电流源的参考电流(IREF),只的并联电流源中的一个的开关速度的反应时间(供给的电流更大的负载电流源(6)的输出侧的数量(n) 5,6)被确定。