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    • 6. 发明公开
    • PHOTODIODE ARRAY FOR SPECTROSCOPIC MEASUREMENT, AND SPECTROSCOPIC MEASUREMENT APPARATUS
    • 用于光谱测量的光电二极管阵列和光谱测量装置
    • EP2833106A1
    • 2015-02-04
    • EP13767497.4
    • 2013-03-26
    • Shimadzu CorporationTohoku University
    • TOMINAGA, HidekiHIROSE, RyutaTAKUBO, KenjiSUGAWA, ShigetoshiKURODA, Rihito
    • G01J3/36G02B1/11
    • G01J3/2803G01J3/0213G01J3/0229G01J2003/123G01J2003/1234G01J2003/2806G02B1/116H01L27/1462H01L27/14643
    • A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure (the material and/or thickness of the coating) of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO 2 coating layer (104) on the silicon substrate (102) and an Al 2 O 3 coating layer (105) are common to all the photodiodes, while the structure of the upper layers are modified with respect to the wavelength. Within an ultraviolet wavelength region, the coating structure is more finely changed with respect to the wavelength. By such a design, the transmittance (the rate at which incident light reaches a photoelectric conversion region) can be improved while making the best efforts to avoid a complex manufacturing process. As a result, high levels of sensitivity can be achieved without omission even within the ultraviolet wavelength region in a spectrometric measurement system using a photodiode array detector.
    • 以一维形式排列的多个光电二极管被分成多个组。 对于每个组改变抗反射涂层的结构(涂层的材料和/或厚度),使得属于每个组的光电二极管的所有表面都覆盖有抗反射涂层,该抗反射涂层具有在 这些光电二极管接收的光波长范围。 特别地,硅衬底(102)上的SiO 2涂层(104)和Al 2 O 3涂层(105)对于所有光电二极管是共同的,而上层的结构相对于波长进行修改。 在紫外线波长区域内,涂层结构相对于波长更细微地改变。 通过这样的设计,可以在尽可能避免复杂的制造工艺的同时提高透射率(入射光到达光电转换区域的速率)。 结果,即使在使用光电二极管阵列检测器的光谱测量系统中的紫外线波长区域内也可以实现高水平的灵敏度。