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    • 5. 发明公开
    • IMPROVED PROCESS FOR NiFe FLUXGATE DEVICE
    • 镍铁助焊剂装置的改进工艺
    • EP3227402A1
    • 2017-10-11
    • EP15864348.6
    • 2015-12-02
    • Texas Instruments Incorporated
    • EISSA, Mona M.ZHANG, YousongJENSON, Mark
    • C09K13/04H01L21/3213
    • C23F1/28C09K13/06C23F1/02G01R33/04G03F7/0005H01L21/02107
    • An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.
    • 在所述实例中,用于以大致相同的蚀刻速率同时蚀刻NiFe和AlN的蚀刻剂包括磷酸,乙酸,硝酸和去离子水。 可以使用NiFe和AlN的交替层来形成集成电路(100)中的磁通门磁强计的磁芯(120)。 湿蚀刻提供良好的尺寸控制和良好的磁芯轮廓的交替层的良好蚀刻速率。 NiFe和AlN的交替层可以用应力消除层(118,122)封装。 可以使用抗蚀剂图案来限定磁芯几何形状。 可以控制湿蚀刻的过度时间,使得磁芯图案延伸超过磁芯后蚀刻的基底至少1.5微米。 用于形成抗蚀剂图案的光掩模也可用于形成应力消除蚀刻图案。