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    • 6. 发明公开
    • POLISHING PAD AND MANUFACTURING METHOD THEREFOR
    • 抛光垫及其制造方法
    • EP2698809A1
    • 2014-02-19
    • EP12770798.2
    • 2012-04-16
    • Fujibo Holdings, Inc.
    • ITOYAMA KoukiMIYAZAWA Fumio
    • H01L21/304B24B37/24C08J5/14
    • B24B37/24B24B37/22C08G18/10C08G18/4854C08G18/7621C08G2101/0008C08J9/12C08J2207/00C08J2375/04H01L21/304C08G18/3814C08G18/4829
    • Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 µs, the polyurethane-polyurea resin foam has a storage elastic modulus E' of 1 to 30 MPa, the storage elastic modulus E' being measured at 40°C with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm 3 .
    • 本发明提供一种抛光垫,该抛光垫能够解决使用传统的硬质(干)抛光垫时出现的划痕问题,该抛光垫具有优异的抛光速率和抛光均匀性,并且不仅可以用于一次抛光,而且可以用于精抛光, 其制造方法。 该抛光垫是用于抛光半导体器件的抛光垫,其包括具有基本上球形电池的聚氨酯 - 聚脲树脂发泡体的抛光层,其中聚氨酯 - 聚脲树脂发泡体的M成分的自旋 - 自旋弛豫时间T2为 160〜260μs时,聚氨酯 - 聚脲树脂发泡体的储能弹性模量E'为1〜30MPa,储能弹性模量E'在40℃,初始负荷10g,应变范围0.01〜 4%,拉伸模式下的测定频率为0.2Hz,聚氨酯 - 聚脲树脂发泡体的密度D为0.30〜0.60g / cm 3。