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    • 3. 发明授权
    • VERFAHREN ZUR VERHINDERUNG DER BEIM VERFUGEN VON PFLASTERSTEINBELÄGEN AUFTRETENDEN FLECKENBILDUNG
    • VERFAHREN ZUR VERHINDERUNG DER BEIM VERFUGEN VONPFLASTERSTEINBELÄGENAUFTRETENDEN FLECKENBILDUNG
    • EP2010466B1
    • 2009-08-26
    • EP07724536.3
    • 2007-04-24
    • Construction Research and Technology GmbH
    • KAISER, RobertEISENREICH, AndreasGLASER, WernerGRAF, Wilhelm
    • C04B41/48
    • C04B41/4592C04B2111/60C04B41/46C04B41/4803C04B41/502C04B41/4834C04B41/4869
    • A method of preventing the spot formation which occurs on the surface of paving stones when joining paving stones by means of reactive resin mortars, wherein a) a protective layer (A) comprising A 1 ) from 5 to 99.5% by weight of a water-soluble and/or water-dispersible polymer, A 2 ) from 0.5 to 35% by weight of an evaporation accelerator selected from the group consisting of alcohols, glycol ethers, ketones and any mixtures thereof, A 3 ) if appropriate, water as balance is applied to the paving stones before joining, b) after drying of the protective layer, the reactive resin mortar is introduced and c) after curing of the reactive resin mortar, the protective layer (A) is cleaned off together with the adhering reactive resin residues by means of water, is described. The method of the invention makes rapid joining of paving stones by means of reactive resin mortars and reliable prevention of spot formation on the surface of these paving stones possible.
    • 一种防止在通过反应性树脂砂浆接合铺路石时在铺路石表面上发生的斑点形成的方法,其中a)保护层(A)包含A1)5-99.5重量%的水溶性 和/或水分散性聚合物,A2)0.5-35重量%选自醇,乙二醇醚,酮及其任何混合物的蒸发促进剂,A3)如果合适,将水作为余量施用于 b)在保护层干燥之后,引入反应性树脂砂浆,和c)在反应性树脂砂浆固化之后,通过借助于粘合的反应性树脂残余物将保护层(A)与粘合的反应性树脂残余物 水被描述。 本发明的方法通过反应性树脂砂浆快速连接铺路石,并可靠地防止这些铺路石表面上的斑点形成。
    • 6. 发明公开
    • Multiple level mask for patterning of ceramic materials
    • Mehrschichtige Maskefürdie Strukturierung von keramischen Materialien。
    • EP0677500A2
    • 1995-10-18
    • EP95104916.2
    • 1995-04-03
    • TEXAS INSTRUMENTS INCORPORATED
    • Belcher, James F.Long, John P.Frank, Steven N.Jones, Jeanee
    • C04B41/53H01L27/148H01L27/146
    • C04B41/009C04B41/5338C04B41/91C04B2111/00844H01L27/1465H01L37/02Y10S438/951C04B41/4562C04B41/4592C04B35/00C04B35/465
    • A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.
    • 用于掩蔽的新型多层掩模(例如三层掩模36)工艺实现了具有基本垂直壁的期望的厚掩模,并因此改善了陶瓷材料(例如BST)的离子研磨过程。 本发明的一个实施例是一种微电子结构,其包括陶瓷衬底,覆盖衬底的离子磨掩模层(例如光致抗蚀剂42),覆盖离子磨掩模层的干蚀刻选择性掩模层(例如TiW 40) 干蚀刻选择性掩模层,其包括与离子磨掩模层不同的材料,覆盖干蚀刻选择性掩模层的顶部光敏层(38),顶部光敏层包含与干蚀刻选择性不同的材料 掩模层,以及形成在顶部光敏层中的预定图案,干蚀刻选择掩模层和离子磨掩模层。 该预定图案在离子磨掩模层中具有基本垂直的壁。