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    • 5. 发明公开
    • Semiconductor light emitting device
    • 半导体发光器件
    • EP2669965A3
    • 2015-12-02
    • EP13157779.3
    • 2013-03-05
    • Kabushiki Kaisha Toshiba
    • Sugizaki, YoshiakiTomizawa, HideyukiKojima, AkihiroFuruyama, HidetoShimada, MiyokoAkimoto, Yosuke
    • H01L33/62H01L25/16
    • H01L33/62H01L25/167H01L33/36H01L33/50H01L2924/0002H01L2924/00
    • According to an embodiment, a semiconductor light emitting device includes a semiconductor layer (15), a first electrode (16), a second electrode (17), a first insulating film (18), a first interconnection (21, 23) and a second interconnection (22, 24). The semiconductor layer (15) includes a luminous portion and a non-luminous portion. The first electrode (16) is provided on the luminous portion, and the second electrode (17) is provided on the non-luminous portion. The first insulating film (18) is provided on the semiconductor layer (15), the first electrode (16) and the second electrode (17). The first interconnection (21, 23) having a first protrusion (21c) is provided on the first insulating film (18) and electrically connected to the first electrode (16). The second interconnection (22, 24) having a second protrusion (22c) is provided on the first insulating film (18) and electrically connected to the n-side electrode (17). A tip end of the first protrusion (21c) faces a tip end of the second protrusion (22c), being apart therefrom with a minimum gap between the p-side interconnection (21, 23) and the n-side interconnection (22, 24).
    • 根据一个实施例,半导体发光器件包括半导体层(15),第一电极(16),第二电极(17),第一绝缘膜(18),第一互连(21,23)和 第二互连(22,24)。 半导体层(15)包括发光部分和非发光部分。 第一电极(16)设置在发光部分上,第二电极(17)设置在非发光部分上。 第一绝缘膜(18)设置在半导体层(15),第一电极(16)和第二电极(17)上。 具有第一突起(21c)的第一互连(21,23)设置在第一绝缘膜(18)上并且电连接到第一电极(16)。 具有第二突起(22c)的第二互连(22,24)设置在第一绝缘膜(18)上并且电连接到n侧电极(17)。 第一突起(21c)的末端面对第二突起(22c)的末端,以p侧互连(21,23)和n侧互连(22,24)之间的最小间隙与第二突起 )。