会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明公开
    • GALLIUM NITRIDE MATERIAL DEVICES AND ASSOCIATED METHODS
    • 氮化镓材料装置和相关方法
    • EP1969635A1
    • 2008-09-17
    • EP06838558.2
    • 2006-11-30
    • Nitronex Corporation
    • JOHNSON, Jerry, WayneSINGHAL, SameerHANSON, Allen, W.THERRIEN, Robert, J.
    • H01L29/778H01L29/40
    • H01L29/7787H01L29/2003H01L29/402H01L29/41725H01L29/42316H01L29/66462
    • Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.
    • 氮化镓材料装置和与之相关的方法。 在一些实施例中,器件可以是包括连接到源电极(14)的导电结构(29)的晶体管。 导电结构可以形成源极场板,其可以形成在介电材料(28)之上并且可以在晶体管的栅极电极(18)的方向上延伸。 源场板可以减小栅电极和漏电极(16)之间的器件区域中的电场(例如,峰值电场和/或集成电场),这可以产生许多优点,包括减少的栅极 漏极反馈电容,降低的表面电子浓度,增加的击穿电压以及提高的器件可靠性。 这些优点使得氮化镓材料晶体管能够以高漏极效率和/或高输出功率工作。 该器件可用于射频功率应用等。