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1. 发明公开

EP1969635A1 GALLIUM NITRIDE MATERIAL DEVICES AND ASSOCIATED METHODS 有权转让
标题翻译：氮化镓材料装置和相关方法
公开(公告)号：EP1969635A1
公开(公告)日：2008-09-17
申请号：EP06838558.2
申请日：2006-11-30
申请人： Nitronex Corporation
发明人： JOHNSON, Jerry, Wayne , SINGHAL, Sameer , HANSON, Allen, W. , THERRIEN, Robert, J.
IPC分类号： H01L29/778 , H01L29/40
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/41725 , H01L29/42316 , H01L29/66462
摘要： Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.
摘要翻译：氮化镓材料装置和与之相关的方法。在一些实施例中，器件可以是包括连接到源电极（14）的导电结构（29）的晶体管。导电结构可以形成源极场板，其可以形成在介电材料（28）之上并且可以在晶体管的栅极电极（18）的方向上延伸。源场板可以减小栅电极和漏电极（16）之间的器件区域中的电场（例如，峰值电场和/或集成电场），这可以产生许多优点，包括减少的栅极漏极反馈电容，降低的表面电子浓度，增加的击穿电压以及提高的器件可靠性。这些优点使得氮化镓材料晶体管能够以高漏极效率和/或高输出功率工作。该器件可用于射频功率应用等。

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