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1. 发明授权

EP2927976B1 Resistive random access memory and method of fabricating the same 有权
公开(公告)号：EP2927976B1
公开(公告)日：2018-06-20
申请号：EP14186834.9
申请日：2014-09-29
申请人： Winbond Electronics Corp.
发明人： Chang, Shuo-Che , Ho, Chia-Hua
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/1608
摘要： A resistive random access memory includes a first electrode layer (102), a second electrode layer (110), and a stacked structure (104) disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer (106) and a resistance variable layer (108). The material of the conductive layer includes HfO x , the material of the resistance variable layer includes HfO y , and x

2. 发明授权

EP2927975B8 Resistive random access memory and method of fabricating the same 有权
公开(公告)号：EP2927975B8
公开(公告)日：2018-08-15
申请号：EP14186833.1
申请日：2014-09-29
申请人： Winbond Electronics Corp.
发明人： Ho, Chia-Hua , Chang, Shuo-Che , Liao, Hsiu-Han , Hsu, Po-Yen , Lin, Meng-Hung , Wu, Bo-Lun , Shen, Ting-Ying
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： Provided is a resistive random access memory including a first electrode layer (102), a second electrode layer (106), and a variable resistance layer (104) disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer (108), a second sublayer (112), and a conductive metal oxynitride layer (110) disposed between the first sublayer and the second sublayer.

3. 发明公开

EP3001424A1 Operation method of resistive random access memory cell 审中-公开
标题翻译： BetriebsverfahrenfürResistance Direktzugriffspeicherzelle
公开(公告)号：EP3001424A1
公开(公告)日：2016-03-30
申请号：EP14186692.1
申请日：2014-09-26
申请人： Winbond Electronics Corp.
发明人： Ho, Chia-Hua , Liao, Shao-Ching , Wang, Ping-Kun , Lin, Meng-Hung
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0064 , G11C2013/0092 , G11C2213/79
摘要： An operation method of a resistive random access memory (RRAM) cell is provided, wherein the RRAM cell includes a variable impedance element and a switch element connected in series. The operation method includes the following steps. When the switch element is turned-on, a writing signal is provided to the variable impedance element to set an impedance of the variable impedance element. In a first period, the writing signal is set to a first writing voltage level to transmit a first electrical energy to the variable impedance element. In a second period, a second electrical energy is transmitted to the variable impedance element by the writing signal. The second period is subsequent to the first period, the first electrical energy and the second electrical energy are greater than zero, and the second electrical energy is smaller than the first electrical energy.
摘要翻译：提供了一种电阻随机存取存储器（RRAM）单元的操作方法，其中RRAM单元包括串联连接的可变阻抗元件和开关元件。操作方法包括以下步骤。当开关元件导通时，向可变阻抗元件提供写入信号以设置可变阻抗元件的阻抗。在第一时段中，将写入信号设置为第一写入电压电平以向可变阻抗元件发送第一电能。在第二时段中，通过写入信号将第二电能传输到可变阻抗元件。第二时间段在第一时段之后，第一电能和第二电能大于零，第二电能小于第一电能。

4. 发明授权

EP2927975B1 Resistive random access memory and method of fabricating the same 有权
公开(公告)号：EP2927975B1
公开(公告)日：2018-05-30
申请号：EP14186833.1
申请日：2014-09-29
申请人： Winbond Electronics Corp.
发明人： Ho, Chia-Hua , Chang, Shuo-Che , Liao, Hsiu-Han , Hsu, Po-Yen , Lin, Meng-Hung , Wu, Bo-Lun , Shen, Ting-Ying , Ho, Chia-Hua
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： Provided is a resistive random access memory including a first electrode layer (102), a second electrode layer (106), and a variable resistance layer (104) disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer (108), a second sublayer (112), and a conductive metal oxynitride layer (110) disposed between the first sublayer and the second sublayer.

5. 发明公开

EP2927976A1 Resistive random access memory and method of fabricating the same 有权
标题翻译： Resistist Direktzugriffsspeicher und Verfahren zur Herstellung davon
公开(公告)号：EP2927976A1
公开(公告)日：2015-10-07
申请号：EP14186834.9
申请日：2014-09-29
申请人： Winbond Electronics Corp.
发明人： Chang, Shuo-Che , Ho, Chia-Hua
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/1608
摘要： A resistive random access memory includes a first electrode layer (102), a second electrode layer (110), and a stacked structure (104) disposed between the first electrode layer and the second electrode layer. The stacked structure includes a conductive layer (106) and a resistance variable layer (108). The material of the conductive layer includes HfO x , the material of the resistance variable layer includes HfO y , and x
摘要翻译：电阻式随机存取存储器包括第一电极层（102），第二电极层（110）和设置在第一电极层和第二电极层之间的堆叠结构（104）。层叠结构包括导电层（106）和电阻变化层（108）。导电层的材料包括HfO x，电阻变化层的材料包括HfO y和x

6. 发明公开

EP2927975A1 Resistive random access memory and method of fabricating the same 有权
标题翻译：电阻随机存取存储器及其制造方法
公开(公告)号：EP2927975A1
公开(公告)日：2015-10-07
申请号：EP14186833.1
申请日：2014-09-29
申请人： Winbond Electronics Corp.
发明人： Ho, Chia-Hua , Chang, Shuo-Che , Liao, Hsiu-Han , Hsu, Po-Yen , Lin, Meng-Hung , Wu, Bo-Lun , Shen, Ting-Ying
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： Provided is a resistive random access memory including a first electrode layer (102), a second electrode layer (106), and a variable resistance layer (104) disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer (108), a second sublayer (112), and a conductive metal oxynitride layer (110) disposed between the first sublayer and the second sublayer.
摘要翻译：提供一种电阻式随机存取存储器，其包括第一电极层（102），第二电极层（106）以及设置在第一电极层与第二电极层之间的可变电阻层（104），其中第二电极层包括第一子层（108），第二子层（112）以及设置在第一子层和第二子层之间的导电金属氧氮化物层（110）。

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