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1. 发明公开

EP3310499A1 SIEBPLATTE FÜR SIEBANLAGEN ZUM MECHANISCHEN KLASSIEREN VON POLYSILICIUM UND VERWENDEN DIESER SIEBPLATTE 有权转让
标题翻译：多晶硅机械分级筛选系统筛板及该筛板的使用
公开(公告)号：EP3310499A1
公开(公告)日：2018-04-25
申请号：EP16711200.2
申请日：2016-03-15
申请人： Siltronic AG , Wacker Chemie AG
发明人： BERGMANN, Andreas , BUSCHHARDT, Thomas , EHRENSCHWENDTNER, Simon , FRAUNHOFER, Christian
IPC分类号： B07B1/46 , B07B13/04 , B07B1/12
CPC分类号： B07B13/07 , B07B1/12
摘要： The object of the invention is a screen plate (1) for screen installations for mechanically classifying polysilicon, comprising a feeding zone (2) for polysilicon, a profiled region (3) with tips (32) and depressions (31), a region (4) with slots (41), the slots (41) adjoining the depressions (31), and a removal region (5), wherein the slots (41) increase in the direction of the removal region.

2. 发明授权

EP3097053B1 VERFAHREN ZUR HERSTELLUNG VON POLYKRISTALLINEM SILICIUM 有权
标题翻译：制备多晶硅的方法
公开(公告)号：EP3097053B1
公开(公告)日：2017-12-06
申请号：EP15700394.8
申请日：2015-01-16
申请人： Wacker Chemie AG
发明人： FAERBER, Stefan , BERGMANN, Andreas , PECH, Reiner , RIESS, Siegfried
IPC分类号： C01B33/035
CPC分类号： C01B33/035 , C30B15/36

3. 发明公开

EP3097053A1 VERFAHREN ZUR HERSTELLUNG VON POLYKRISTALLINEM SILICIUM 有权
公开(公告)号：EP3097053A1
公开(公告)日：2016-11-30
申请号：EP15700394.8
申请日：2015-01-16
申请人： Wacker Chemie AG
发明人： FAERBER, Stefan , BERGMANN, Andreas , PECH, Reiner , RIESS, Siegfried
IPC分类号： C01B33/035
CPC分类号： C01B33/035 , C30B15/36
摘要： The subject matter of the invention is a method for producing polycrystalline silicon, comprising a) depositing of polycrystalline silicon by means of CVD on at least one U-shaped substrate which is heated by way of direct current passage to a temperature at which polycrystalline silicon is deposited on the substrate, as a result of which at least one U-shaped polycrystalline silicon rod pair is produced, wherein the substrate is connected at each of its free ends to a graphite electrode and is supplied with current in this way; b) removal of the at least one polycrystalline silicon rod pair from the reactor; c) elimination of graphite residues from the electrode-side ends of the at least two polycrystalline silicon rods of the at least one polycrystalline silicon rod pair; d) comminution of the at least two polycrystalline silicon rods into rod pieces or into fragments; characterized in that the graphite residues are chipped off each electrode-side end of the at least two polycrystalline silicon rods by means of at least one mechanical pulse.
摘要翻译：本发明的主题是一种制造多晶硅的方法，其包括：a）通过CVD在通过直流通路加热的至少一个U形衬底上沉积多晶硅至多晶硅为沉积在衬底上，由此产生至少一个U形多晶硅棒对，其中衬底在其每个自由端连接到石墨电极并且以这种方式被供应电流; b）从反应器中除去至少一个多晶硅棒对; c）从所述至少一个多晶硅棒对的至少两个多晶硅棒的电极侧末端消除石墨残渣; d）将所述至少两个多晶硅棒粉碎成棒片或碎片; 其特征在于，借助于至少一个机械脉冲将所述石墨残渣从所述至少两个多晶硅棒的每个电极侧端部切下。

4. 发明授权

EP3310499B1 VERFAHREN ZUM MECHANISCHEN KLASSIEREN VON POLYSILICIUM 有权转让
公开(公告)号：EP3310499B1
公开(公告)日：2020-11-25
申请号：EP16711200.2
申请日：2016-03-15
申请人： Siltronic AG , Wacker Chemie AG
发明人： BERGMANN, Andreas , BUSCHHARDT, Thomas , EHRENSCHWENDTNER, Simon , FRAUNHOFER, Christian
IPC分类号： B07B13/07 , B07B1/12 , B07B1/46 , B07B13/04

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