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1. 发明公开

EP4216219A1 TWO-PORT TERNARY CONTENT ADDRESSABLE MEMORY 审中-实审
公开(公告)号：EP4216219A1
公开(公告)日：2023-07-26
申请号：EP23159961.4
申请日：2020-04-07
申请人： United Microelectronics Corp.
发明人： HUANG, Chun-Hsien , LUNG, Ching-Cheng , KUO, Yu-Tse , WANG, Shu-Ru , TSENG, Chun-Yen
IPC分类号： G11C8/16 , G11C15/04
摘要： A two-port ternary content addressable memory (TCAM) cell, comprising: a first storage unit, configured to store a first bit of a content data, wherein the first storage unit comprises a first storage node and a first inverted storage node; a second storage unit, configured to store a second bit of the content data, wherein the second storage unit comprises a second storage node and a second inverted storage node; a set of first search terminals, configured to input a first search data into the two-port TCAM; a set of second search terminals, configured to input a second search data into the two-port TCAM; a first comparison circuit, respectively coupled to the first storage node of the first storage unit, the second storage node of the second storage unit and the set of first search terminals, configured to determine whether the first search data matches the content data and accordingly generate a first determination result; a second comparison circuit, respectively coupled to the first inverted storage node of the first storage unit, the second inverted storage node of the second storage unit and the set of second search terminals, configured to determine whether the second search data matches the content data and accordingly generate a second determination result; a first match terminal, coupled to the first comparison circuit, configured to output the first determination result; and a second match terminal, coupled to the second comparison circuit, configured to output the second determination result; wherein the first search data and the second search data are concurrently inputted into the two-port TCAM, and the first determination result and the second determination result are concurrently outputted.

2. 发明公开

EP3848932A1 MEMORY INCLUDING NON-VOLATILE CELLS AND CURRENT DRIVING CIRCUIT 审中-实审
公开(公告)号：EP3848932A1
公开(公告)日：2021-07-14
申请号：EP20169743.0
申请日：2020-04-16
申请人： United Microelectronics Corp.
发明人： TSENG, Chun-Yen , KUO, Yu-Tse , CHEN, Chang-Hung , WANG, Shu-Ru , CHIOU, Ya-Lan , HUANG, Chun-Hsien , TSAI, Chih-Wei , YU, Hsin-Chih , WU, Yi-Ting , HUANG, Cheng-Tung , WANG, Jen-Yu , WU, Jhen-Siang , YANG, Po-Chun , HSIEH, Yung-Ching , CHEN, Jian-Jhong , LI, Bo-Chang
IPC分类号： G11C11/16 , G11C13/00
摘要： A memory includes (n-1) non-volatile cells, (n-1) bit lines and a current driving circuit. Each of the (n-1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n-1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n-1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n-1) non-volatile cells.

3. 发明公开

EP4294144A1 STATIC RANDOM ACCESS MEMORY ARRAY PATTERN 审中-实审
公开(公告)号：EP4294144A1
公开(公告)日：2023-12-20
申请号：EP22187031.4
申请日：2022-07-26
申请人： United Microelectronics Corp.
发明人： HUANG, Chun-Hsien , KUO, Yu-Tse , WANG, Shu-Ru , HUANG, Li-Ping , TSENG, Chun-Yen
IPC分类号： H10B10/00 , H01L27/02 , G06F30/392
摘要： The invention provides a static random access memory (SRAM) array pattern, which comprises a substrate, a first region, a second region, a third region and a fourth region are defined on the substrate and arranged in an array, each region partially overlaps with the other three regions, and each region contains a SRAM cell, the layout of the SRAM cell in the first region is the same as that in the third region, the layout of the SRAM cell in the second region is the same as that in the fourth region, and the layout of the SRAM cell in the first region and the layout of the SRAM cell in the fourth region are mirror patterns along a horizontal axis.

4. 发明公开

EP3739586A1 TWO-PORT TERNARY CONTENT ADDRESSABLE MEMORY AND LAYOUT PATTERN THEREOF, AND ASSOCIATED MEMORY DEVICE 有权转让
公开(公告)号：EP3739586A1
公开(公告)日：2020-11-18
申请号：EP20168436.2
申请日：2020-04-07
申请人： United Microelectronics Corp.
发明人： HUANG, Chun-Hsien , LUNG, Ching-Cheng , KUO, Yu-Tse , WANG, Shu-Ru , TSENG, Chun-Yen
IPC分类号： G11C8/16 , G11C15/04
摘要： A two-port ternary content addressable memory (TCAM) and layout pattern thereof, and associated memory device are provided. The two-port TCAM may include a first storage unit, a second storage unit, a set of first search terminals, a set of second search terminals, a first comparison circuit, a second comparison circuit, a first match terminal and a second match terminal, wherein the first comparison circuit is respectively coupled to the first storage unit, the second storage unit, the set of first search terminals and the first match terminal, and the second comparison circuit is respectively coupled to the first storage unit, the second storage unit, the set of second search terminals and the second match terminal. First search data and second search data may be concurrently inputted into the two-port TCAM for determining whether the first search data and the second search data match content data within the two-port TCAM.

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