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    • 1. 发明公开
    • Process for making planar diodes with low-cost silicon substrates and solar cells produced therefrom
    • 一种用于生产与低成本的硅衬底和由该方法制备的太阳能电池的平面二极管过程。
    • EP0002134A1
    • 1979-05-30
    • EP78300645.5
    • 1978-11-20
    • UNION CARBIDE CORPORATION
    • Kotval, Peshotan SohrabStrock, Harold Bunsen
    • H01L31/18C01B33/02
    • H01L31/06C01B33/037H01L31/1804H01L31/182Y02E10/546Y02E10/547Y02P70/521Y10S117/903Y10S420/903
    • Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low-cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon-slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally-solidified material being a desirable low cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.
    • {PG,1外延和扩散型平面二极管和太阳能电池利用低成本精制具有比基本上常规的高成本,高纯度的半导体级硅更高的杂质含量的冶金硅基板。 外延型产品必须正对 - 对 - 对 - 对基板的配置,而扩散型产品在其中具有扩散以形成在低成本硅基板的p-n结的五价杂质。 一个实施例采用通过从冶金级硅在熔融铝的溶液中沉淀基本上不含铁 - 硅血小板制备的multigrained精制冶金硅(RMS),熔化所述从熔体中与二氧化硅接触的炉渣精炼血小板和提拉硅晶锭 所述精制冶金硅(RMS)。 通过定向凝固精制硅的炉渣熔融,一个multigrained,定向凝固精制冶金硅(DS / RMS)获得,以从熔体被拉其使用作为所述的低成本基材滚球。 因此,DS / RMS可以被重新熔融并定向凝固的第二时间与来自所述被拉出的晶柱两次定向凝固材料是可取的,低成本的,单晶材料适合用作上述基片为平面二极管和太阳能 电池应用。
    • 4. 发明公开
    • Improved refined metallurgical silicon and process for the production thereof
    • Gereinigtes冶金冶炼和冶炼厂德国Herstellung。
    • EP0002135A1
    • 1979-05-30
    • EP78300647.1
    • 1978-11-20
    • UNION CARBIDE CORPORATION
    • Kotval, Peshotan SohrabStrock, Harold Bunsen
    • C01B33/02C30B15/00
    • C30B29/06C01B33/037C30B15/206
    • Silicon platelets essentially free of iron are precipitated from a solution of metallurgical grade silicon in molten aluminum and are melted in contact with silica slag to produce a refined metallurgical silicon (RMS). Multigrained boules of said RMS may be pulled by the Czochralski method on a rotating silicon seed rod from a melt of said RMS. Alternatively, the silicon-slag melt can be directionally solidified to produce a directionally solidified refined metallurgical silicon (DS/RMS) separated from a region of solidified melt having a high concentration of impurities rejected by the silicon as it solidifies. Multigrained DS/RMS boules may be pulled from a melt of said DS/RMS. Alternatively, the DS/RMS is remelted and directionally solidified a second time with single crystal DS/RMS boules being pulled from a melt of the twice directionally solidified material. The thus-pulled multigrained RMS and DS/RMS and single crystal DS/RMS materials are low-cost products having a substantially higher impurity content than in conventional high purity semiconductor grade silicon while, at the same time, having desirable solar cell properties.
    • 基本上不含铁的硅片从冶金级硅在熔融铝中的溶液中沉淀出来,并与二氧化硅渣接触熔化,生成精制冶金硅(RMS)。 所述RMS的多孔结块可以通过切克劳斯基法从所述RMS的熔体在旋转的硅种子棒上拉动。 或者,硅渣熔体可以被定向凝固,以产生从凝固的高浓度的杂质的固化熔体区域分离的定向凝固的精炼冶金硅(DS / RMS)。 可以从DS / RMS的熔体中拉出多尺寸DS / RMS颗粒。 或者,DS / RMS再次熔化并定向凝固,其中单晶DS / RMS晶片从两次定向凝固材料的熔体中拉出。 这样拉动的多频RMS和DS / RMS和单晶DS / RMS材料是低成本的产品,其杂质含量比传统的高纯度半导体级硅具有更高的杂质含量,同时具有理想的太阳能电池性能。