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1. 发明授权

EP2930179B1 RUTHENIUM COMPLEX AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM 失效
公开(公告)号：EP2930179B1
公开(公告)日：2018-09-05
申请号：EP13860425.1
申请日：2013-12-06
申请人： Tosoh Corporation , Sagami Chemical Research Institute
发明人： TADA, Kenichi , YAMAMOTO, Toshiki , OIKE, Hiroyuki , MANIWA, Atsushi , CHIBA, Hirokazu , IWANAGA, Kohei , KAWANO, Kazuhisa
IPC分类号： C07F15/00 , C23C16/18 , H01L21/316 , H01L21/318
CPC分类号： H01L21/28568 , C07F7/02 , C07F15/0046 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76871
摘要： To provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas. [Chem. 1] (wherein R 1a to R 7a , R 8 , R 9 and R 10 to R 18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.)

2. 发明授权

EP2520690B1 RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM AND METHOD FOR PRODUCING A RUTHENIUM-CONTAINING FILM 失效
标题翻译：钌络合物混合物，其制备方法，用于形成膜的组合物和用于制备含钌膜的方法
公开(公告)号：EP2520690B1
公开(公告)日：2018-04-11
申请号：EP10840837.8
申请日：2010-11-29
申请人： Tosoh Corporation
发明人： MANIWA, Atsushi , OSHIMA, Noriaki , KAWANO, Kazuhisa , FURUKAWA, Taishi , CHIBA, Hirokazu , YAMAMOTO, Toshiki
IPC分类号： C23C16/18 , H01L21/28 , H01L21/285 , C07F15/00
CPC分类号： C07F17/02 , C23C16/18 , H01L21/28088 , H01L21/28556 , H01L21/31695 , H01L21/32051 , H01L29/4966
摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

3. 发明授权

EP1657245B1 ORGANOIRIDIUM COMPOUND, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING FILM 失效
标题翻译：铱有机化合物，制造方法，用于制造薄膜和方法
公开(公告)号：EP1657245B1
公开(公告)日：2012-07-25
申请号：EP04771757.4
申请日：2004-08-11
申请人： TOSOH CORPORATION , SAGAMI CHEMICAL RESEARCH CENTER
发明人： KAWANO, Kazuhisa , TAKAMORI, Mayumi , OSHIMA, Noriaki
IPC分类号： C07F17/00 , C23C16/18
CPC分类号： C07F17/02 , C23C16/18
摘要： An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film.

4. 发明公开

EP2520690A1 RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM AND METHOD FOR PRODUCING SAME 失效
标题翻译： RUTHENIUMKOMPLEXMISCHUNG，HERSTELLUNGSVERFAHRENDAFÜR，FILMBILDENDE ZUSAMMENSETZUNG，RENHENIUMHALTIGER FILM UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2520690A1
公开(公告)日：2012-11-07
申请号：EP10840837.8
申请日：2010-11-29
申请人： Tosoh Corporation
发明人： MANIWA, Atsushi , OSHIMA, Noriaki , KAWANO, Kazuhisa , FURUKAWA, Taishi , CHIBA, Hirokazu , YAMAMOTO, Toshiki
IPC分类号： C23C16/18 , H01L21/28 , H01L21/285 , C07F15/00
CPC分类号： C07F17/02 , C23C16/18 , H01L21/28088 , H01L21/28556 , H01L21/31695 , H01L21/32051 , H01L29/4966
摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
摘要翻译：为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。因此，需要具有高热反应性的钌化合物。本发明涉及以含有（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌）的钌络合物混合物作为原料的CVD等制造含钌膜的方法，钌，相对于（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量，后者化合物的量为0.1〜100重量％。

5. 发明公开

EP1657245A2 ORGANOIRIDIUM COMPOUND, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING FILM 失效
标题翻译：铱有机化合物，制造方法，用于制造薄膜和方法
公开(公告)号：EP1657245A2
公开(公告)日：2006-05-17
申请号：EP04771757.4
申请日：2004-08-11
申请人： TOSOH CORPORATION , SAGAMI CHEMICAL RESEARCH CENTER
发明人： KAWANO, Kazuhisa , TAKAMORI, Mayumi , OSHIMA, Noriaki
IPC分类号： C07F17/00
CPC分类号： C07F17/02 , C23C16/18
摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-containing films using the organometallic compound are provided.
The organometallic iridium compound represented by the formula (1)

(example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4)

with a compound represented by the formula (2) or (3)

An iridium-containing film is prepared using the compound as a precursor.
In the formulae, R 1 represents hydrogen atom or a lower alkyl group; R 2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.
摘要翻译：提供了具有低的熔点，优异的汽化特性和低的膜形成温度上的底物，用于制造化合物的方法，以及使用该有机金属化合物制备的含铱膜的方法的有机金属铱化合物。由式（1）（特定化合物（乙基环戊二烯基）双（乙烯）铱的例子）所示的有机金属铱化合物是通过使由下式表示的化合物（4）由下式表示的化合物（2）获得或（3）一种含铱膜，使用该化合物作为前体来制备。在化学式中，R 1个darstellt氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; 碱金属的和M darstellt。

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