专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3348667A1 CHEMICAL VAPOR DEPOSITION FEEDSTOCK COMPRISING ORGANIC RUTHENIUM COMPOUND AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID CHEMICAL VAPOR DEPOSITION FEEDSTOCK 审中-公开
公开(公告)号：EP3348667A1
公开(公告)日：2018-07-18
申请号：EP16844481.8
申请日：2016-09-09
申请人： Tanaka Kikinzoku Kogyo K.K.
发明人： HARADA, Ryosuke , SHIGETOMI, Toshiyuki , ISHIZAKA, Tasuku , AOYAMA, Tatsutaka
IPC分类号： C23C16/18 , C07C251/08 , C07F15/00 , H01L21/285
CPC分类号： C23C16/18 , C07C251/08 , C07F15/0046 , H01L21/285
摘要： The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, including an organoruthenium compound in which two diazadiene ligands and two alkyl ligands are coordinated to ruthenium, the organoruthenium being represented by the following formula. The organoruthenium compound to be applied in the present invention can be used for low-temperature deposition, and capable of forming a ruthenium thin film or a ruthenium compound thin film without use of an oxygen gas.

2. 发明公开

EP3342899A1 CHEMICAL VAPOR DEPOSITION STARTING MATERIAL COMPRISING A BINUCLEAR RUTHENIUM COMPLEX AND CHEMICAL VAPOR DEPOSITION METHOD USING CHEMICAL VAPOR DEPOSITION STARTING MATERIAL 审中-公开
公开(公告)号：EP3342899A1
公开(公告)日：2018-07-04
申请号：EP16839260.3
申请日：2016-08-23
申请人： Tanaka Kikinzoku Kogyo K.K.
发明人： HARADA, Ryosuke , SHIGETOMI, Toshiyuki , ISHIZAKA, Tasuku , AOYAMA, Tatsutaka
IPC分类号： C23C16/16 , C07F15/00 , H01L21/28 , H01L21/285
CPC分类号： C07F15/00 , C09D1/00 , C09D5/24 , C23C16/16 , C23C16/18 , C23C16/45553 , H01L21/28 , H01L21/285 , H01L21/28506 , H01L21/28556 , H01L21/28568
摘要： The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.

3. 发明公开

EP3153473A1 METHOD FOR PURIFYING DODECACARBONYL TRIRUTHENIUM 审中-公开
标题翻译： VERFAHREN ZUR REINIGUNG VON DODECACARBONYLTRIRUTHENIUM
公开(公告)号：EP3153473A1
公开(公告)日：2017-04-12
申请号：EP15802466.1
申请日：2015-06-02
申请人： Tanaka Kikinzoku Kogyo K.K.
发明人： NAKAGAWA, Hirofumi , ISHIZAKA, Tasuku , ISHIDA, Hirofumi , KUMAKURA, Akiko
IPC分类号： C01G55/00 , C07F15/00 , C23C16/16
CPC分类号： C01G55/008 , C01P2002/88 , C01P2006/80 , C07F15/00 , C23C16/16
摘要： An object of the present invention is to provide a purification method to give dodecacarbonyl triruthenium (DCR) which serves as a raw material for chemical vapor deposition and does not cause the contamination of a thin film with impurities even when used to form a ruthenium thin film. The present invention relates to a method in which the dissolved oxygen concentration in the solvent is made 0.2 mg/L or less in at least a dissolution stage, and an organic ruthenium compound including DCR as a raw material for chemical vapor deposition is purified by a recrystallization method. The present invention allows a trace amount of impurities to be separated from DCR. When a ruthenium thin film is formed by use of DCR thus obtained, the formed film is hardly contaminated with impurities. Additionally, the purification method of the present invention is also applicable for recovering/purifying DCR after being used for the formation of a ruthenium thin film.
摘要翻译：本发明的目的是提供一种提供用作化学气相沉积原料的十二羰基三钌（DCR）的纯化方法，即使在形成钌薄膜时也不会引起杂质的杂质污染。本发明涉及至少在溶解阶段将溶剂中的溶解氧浓度设定为0.2mg / L以下的方法，将包含作为化学气相沉积原料的DCR的有机钌化合物通过重结晶法。本发明允许微量的杂质与DCR分离。当通过使用由此获得的DCR形成钌薄膜时，形成的膜几乎不被杂质污染。此外，本发明的纯化方法也适用于在用于形成钌薄膜后回收/纯化DCR。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式