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1. 发明公开

EP0251563A2 Photoelectric conversion device 失效
标题翻译： Photoelektrischer Wandler。
公开(公告)号：EP0251563A2
公开(公告)日：1988-01-07
申请号：EP87305344.1
申请日：1987-06-16
申请人： TOKYO ELECTRIC CO. LTD.
发明人： Ogawa, Minoru , Sakamoto, Koichiro , Tamura, Toshiyuki , Kutsuumi, Kazushige
IPC分类号： H01L27/14
CPC分类号： H01L27/14665 , H01L27/14643
摘要： A photoelectric conversion device including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, is manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.
摘要翻译：首先，通过薄膜形成在基板表面上形成用于薄膜晶体管部分的栅极的光电转换装置，该光电转换装置包括用于设置在相同基板上的开关的传感器部分和薄膜晶体管部分技术，然后在绝缘基板上沉积绝缘膜，a-Si膜和电极，以便一个接一个地层叠，并且通常覆盖传感器部分和薄膜晶体管部分，由此传感器部分和薄膜晶体管部分能够被设置在一系列处理中，同时将该器件放入真空室中。

2. 发明公开

EP0251563A3 Photoelectric conversion device 失效
标题翻译：光电转换装置
公开(公告)号：EP0251563A3
公开(公告)日：1991-01-09
申请号：EP87305344.1
申请日：1987-06-16
申请人： TOKYO ELECTRIC CO. LTD.
发明人： Ogawa, Minoru , Sakamoto, Koichiro , Tamura, Toshiyuki , Kutsuumi, Kazushige
IPC分类号： H01L27/14
CPC分类号： H01L27/14665 , H01L27/14643
摘要： A photoelectric conversion device including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, is manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.
摘要翻译：首先，通过薄膜在基板表面上形成用于薄膜晶体管部分的栅极电极，从而制造出包括传感器部分和设置在同一基板上的用于切换目的的薄膜晶体管部分的光电转换器件技术，然后，在绝缘基板上沉积绝缘膜，a-Si膜和电极以便一个接一个地层叠并共同覆盖传感器部分和薄膜晶体管部分，由此传感器部分和当器件被放入真空室时，薄膜晶体管部分能够在一系列处理中被提供。

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