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    • 3. 发明公开
    • Thin film device
    • Dünnfilmvorrichtung
    • EP1708210A2
    • 2006-10-04
    • EP06006612.3
    • 2006-03-29
    • TDK Corporation
    • Fujiwara, Toshiyasu
    • H01F17/00
    • H01F17/0006
    • The present invention provides a thin film device in which parasitic capacitance can be reduced as much as possible. In the case where a coil is provided so as to be insulated between an upper magnetic film and a lower magnetic film, the coil is constructed so that the cross section of the coil has the minimum width at its edges closest to the upper and lower magnetic films. Parasitic capacitance generated between the coil and the lower magnetic film and parasitic capacitance generated between the coil and the upper magnetic film are reduced and, in addition, parasitic capacitance generated between turns of the coil is also reduced.
    • 本发明提供了尽可能地减少寄生电容的薄膜器件。 在线圈被设置为在上部磁性膜和下部磁性膜之间绝缘的情况下,线圈被构造成使得线圈的截面在其最接近上部和下部磁性的边缘处具有最小宽度 影片。 在线圈和下部磁性膜之间产生的寄生电容和在线圈与上部磁性膜之间产生的寄生电容减少,此外,在线圈的匝之间产生的寄生电容也减小。