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    • 2. 发明公开
    • IMAGING ELEMENT AND ELECTRONIC APPARATUS
    • EP3879571A1
    • 2021-09-15
    • EP19880986.5
    • 2019-10-24
    • Sony Semiconductor Solutions Corporation
    • OHURA, MasashiKOHYAMA, Yusuke
    • H01L27/146
    • The present technology relates to an imaging element and electronic equipment that enable an increase in the amount of saturated charge.
      The imaging element includes a substrate, a first photoelectric conversion region provided in the substrate, a second photoelectric conversion region provided in the substrate, the second photoelectric conversion region being adjacent to the first photoelectric conversion region, a pixel isolation section provided in the substrate and between the first photoelectric conversion region and the second photoelectric conversion region, and a junction region provided in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities. The length of a side of the first impurity region formed in the side wall of the pixel isolation section, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than the length between the two parallel sides of the pixel isolation section. The present technology is applicable to, for example, an imaging apparatus.