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1. 发明公开

EP2529182A1 SYSTEME ET PROCEDE D'EVALUATION DE DEFORMATIONS INHOMOGENES DANS DES PLAQUES MULTICOUCHES 审中-公开
标题翻译：美国柏林维吾尔族自然保护区
公开(公告)号：EP2529182A1
公开(公告)日：2012-12-05
申请号：EP11705922.0
申请日：2011-01-24
申请人： Soitec
发明人： BROEKAART, Marcel , CASTEX, Arnaud , MARINIER, Laurent
IPC分类号： G01B17/06 , G01B21/32 , G03F7/20 , G01N29/06
CPC分类号： G01B17/06 , G01B21/32 , G01N29/0681 , G01N2291/2697 , G03F7/70616 , G03F7/70633
摘要： The invention relates to a method for assessing inhomogeneous deformations in a first plate (110), the first plate being adhered by molecular bonding to a second plate (120). Said method includes a step of recording a plurality of measurement points, each one of the measurement points being locally representative of the level of the surface of the first plate; a step of defining a surface profile of the first plate passing through a plurality of the measurement points; a step of processing the surface profile of the first plate in order to define a typical magnitude thereof; and a step of assessing a level of inhomogeneous deformations in the first plate according to the typical magnitude. The invention further relates to a device (147) for assessing such inhomogeneous deformations.
摘要翻译：一种用于评估通过分子粘附到第二晶片而接合的第一晶片中的不均匀变形的方法和装置。该评估方法包括以下步骤：沿着预定方向和超过预定长度进行多个测量点的至少一次读取，对应于第一晶片的表面轮廓的读数，计算来自第一晶片的测量点的二阶导数表面轮廓和根据二阶导数评估第一晶片中的不均匀变形的水平。

2. 发明公开

EP3011588A1 PROCÉDÉ DE TRANSFERT D'UNE COUCHE DE CIRCUITS 有权
标题翻译： VERFAHREN ZURÜBERFÜHRUNGEINER SCHICHT VON SCHALTUNGEN
公开(公告)号：EP3011588A1
公开(公告)日：2016-04-27
申请号：EP14750526.7
申请日：2014-06-16
申请人： Soitec
发明人： BROEKAART, Marcel , MARINIER, Laurent
IPC分类号： H01L21/56 , H01L21/78 , H01L25/00
CPC分类号： H01L27/14687 , H01L21/6835 , H01L21/78 , H01L25/50 , H01L27/14636 , H01L27/1464 , H01L2221/68363 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method for transferring a buried layer of circuits (2). Said method is characterised in that it includes the following steps which involve: taking a donor substrate (1, 1') including on the inside an area (7, 7') for halting the etching and covered on one of the surfaces (12) thereof, referred to as "front", with a layer of circuits (2); providing either a peripheral groove (3) that extends away from the side edge (13) of said donor substrate (1, 1') or a peripheral clipping (3') on the entire circumference of said substrate, on the side of the surface thereof covered with the layer of circuits (2), said clipping (3') or said groove (3) being provided deep enough to pass entirely through the layer of circuits (2) and extending into the donor substrate (1, 1'); depositing, on the exposed surface (21) of said layer of circuits (2) and on the clipped surface (13') or on the walls of said groove (3), a layer of a material (4) for selectively halting the etching of said layer of circuits (2), referred to as the "second halting layer", without blocking said groove (3); adhering a receiving substrate (5) to said donor substrate (1, 1') on the side covered by said second halting layer (4); reducing the thickness of the donor substrate (1) by chemical etching of the rear surface thereof (11), until reaching said area (7, 7') for halting the etching, such as to obtain the transfer of said buried layer of circuits (2) to said receiving substrate (5).
摘要翻译：用于传送掩埋电路层的方法包括取得包含内部蚀刻停止区域的施主衬底，并在其前侧覆盖有电路层，在施主衬底的整个圆周上产生外围沟槽或外围路由，布线或沟槽在深度上产生，使得它们完全穿过电路层并延伸到施主衬底中，在电路层上和在沟道侧上或沟槽的壁上沉积有选择性的蚀刻停止材料层关于电路层的蚀刻，而不填充沟槽，将接收器衬底接合到施主衬底，并且通过蚀刻其背面直到到达蚀刻停止区来减薄施主衬底，以便获得掩埋电路层的传输到接收器基板。

3. 发明授权

EP3011588B1 PROCÉDÉ DE TRANSFERT D'UNE COUCHE DE CIRCUITS 有权
公开(公告)号：EP3011588B1
公开(公告)日：2019-01-30
申请号：EP14750526.7
申请日：2014-06-16
申请人： Soitec
发明人： BROEKAART, Marcel , MARINIER, Laurent
IPC分类号： H01L21/56 , H01L21/78 , H01L25/00

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