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1. 发明公开

EP1746460A3 Photomask blank, photomask and fabrication method thereof 有权转让
标题翻译：一种光掩模坯件，光掩模和它们的制备方法
公开(公告)号：EP1746460A3
公开(公告)日：2010-04-07
申请号：EP06013457.4
申请日：2006-06-29
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： Yoshikawa, Hiroki , Kubota, Hiroshi , Kinase, Yoshinori , Okazaki, Satoshi , Maruyama, Tamotsu , Haraguchi, Takashi , Iwakata, Masahide , Fukushima, Yuichi , Saga, Tadashi
IPC分类号： G03F1/14 , G03F7/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film (12) for exposure light is formed on one principal plane of a transparent substrate (11) made of quartz or the like that serves as a photomask substrate. The light-shielding film (12) can serve not only as the so-called "light-shielding film" but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70 % or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm -1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film (12) are selected in such a manner that the OD of the light-shielding film (12) is 1.2 to 2.3 for 193 or 248 nm wavelength light.

2. 发明授权

EP1746460B1 Photomask blank, photomask and fabrication method thereof 有权转让
标题翻译：一种光掩模坯件，光掩模和它们的制备方法
公开(公告)号：EP1746460B1
公开(公告)日：2011-04-06
申请号：EP06013457.4
申请日：2006-06-29
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： Yoshikawa, Hiroki , Kubota, Hiroshi , Kinase, Yoshinori , Okazaki, Satoshi , Maruyama, Tamotsu , Haraguchi, Takashi , Iwakata, Masahide , Fukushima, Yuichi , Saga, Tadashi
IPC分类号： G03F1/14 , G03F7/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616

3. 发明公开

EP1746460A2 Photomask blank, photomask and fabrication method thereof 有权转让
标题翻译： Photomaskenrohling，Photomaske und deren Herstellungsverfahren
公开(公告)号：EP1746460A2
公开(公告)日：2007-01-24
申请号：EP06013457.4
申请日：2006-06-29
申请人： Shin-Etsu Chemical Co., Ltd. , Toppan Printing Co., Ltd.
发明人： Yoshikawa, Hiroki , Kubota, Hiroshi , Kinase, Yoshinori , Okazaki, Satoshi , Maruyama, Tamotsu , Haraguchi, Takashi , Iwakata, Masahide , Fukushima, Yuichi , Saga, Tadashi
IPC分类号： G03F1/14 , G03F7/00
CPC分类号： G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , Y10T428/24917 , Y10T428/31616
摘要： A light-shielding film (12) for exposure light is formed on one principal plane of a transparent substrate (11) made of quartz or the like that serves as a photomask substrate. The light-shielding film (12) can serve not only as the so-called "light-shielding film" but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70 % or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm -1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film (12) are selected in such a manner that the OD of the light-shielding film (12) is 1.2 to 2.3 for 193 or 248 nm wavelength light.
摘要翻译：在用作光掩模衬底的石英等制成的透明衬底（11）的一个主平面上形成用于曝光光的遮光膜（12）。遮光膜（12）不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度，每单位厚度的光密度（OD）为0.025nm -1 对于波长为450nm的光。在使用光掩模坯料制造用于ArF曝光的掩模的情况下，遮光膜（12）的厚度和组成选择为使得遮光膜（12）的OD为对于193或248nm波长的光，为1.2至2.3。

4. 发明授权

EP1722271B1 Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof 有权
标题翻译：它们的相移掩模坯料，相移掩模及其制造方法
公开(公告)号：EP1722271B1
公开(公告)日：2015-06-24
申请号：EP06009329.1
申请日：2006-05-05
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Inazuki, Yukio , Yoshikawa, Hiroki , Maruyama, Tamotsu , Okazaki, Satoshi
IPC分类号： G03F1/32 , G03F1/00
CPC分类号： G03F1/32 , Y10T428/31616

5. 发明授权

EP1241524B1 Photomask blank, Photomask and method of manufacture 有权
标题翻译：面膜空白，光罩及其制备方法
公开(公告)号：EP1241524B1
公开(公告)日：2012-05-30
申请号：EP02250981.4
申请日：2002-02-13
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shinagawa, Tsutomu , Maruyama, Tamotsu , Kaneko, Hideo , Kojima, Mikio , Inazuki, Yukio , Okazaki, Satoshi
IPC分类号： G03F1/80 , G03F1/50
CPC分类号： G03F1/50 , G03F1/46 , G03F1/80

6. 发明公开

EP1722271A3 Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof 有权
标题翻译：它们的相移掩模坯料，相移掩模及其制造方法
公开(公告)号：EP1722271A3
公开(公告)日：2007-07-18
申请号：EP06009329.1
申请日：2006-05-05
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Inazuki, Yukio , Yoshikawa, Hiroki , Maruyama, Tamotsu , Okazaki, Satoshi
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/32 , Y10T428/31616
摘要： On a substrate (1) that is transparent to exposure light, a phase-shift multilayer film (2) including a stack of two layers of a metal silicide compound (2a, 2b) is formed. A stabilized oxide layer (2c) is formed on the surface of the metal silicide compound layer (2b) close to the top surface. The layer (2a) close to the substrate (the lower layer) of the phase-shift multilayer film (2) is made of a relatively-metal-rich metal silicide compound, and the upper layer (2b) is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer (2c) has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer (2a). Thus, the stabilized oxide layer (2c) is highly chemically stable and has a high chemical resistance.

7. 发明公开

EP1722271A2 Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof 有权
标题翻译： Phasenschiebermaskenrohling，Phasenschiebermaske und Herstellungsverfahrendafür
公开(公告)号：EP1722271A2
公开(公告)日：2006-11-15
申请号：EP06009329.1
申请日：2006-05-05
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Inazuki, Yukio , Yoshikawa, Hiroki , Maruyama, Tamotsu , Okazaki, Satoshi
IPC分类号： G03F1/00 , G03F1/08
CPC分类号： G03F1/32 , Y10T428/31616
摘要： On a substrate (1) that is transparent to exposure light, a phase-shift multilayer film (2) including a stack of two layers of a metal silicide compound (2a, 2b) is formed. A stabilized oxide layer (2c) is formed on the surface of the metal silicide compound layer (2b) close to the top surface. The layer (2a) close to the substrate (the lower layer) of the phase-shift multilayer film (2) is made of a relatively-metal-rich metal silicide compound, and the upper layer (2b) is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer (2c) has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer (2a). Thus, the stabilized oxide layer (2c) is highly chemically stable and has a high chemical resistance.
摘要翻译：在对曝光光透明的基板（1）上，形成包括两层金属硅化物（2a，2b）的叠层的相移多层膜（2）。在靠近顶面的金属硅化物层（2b）的表面上形成稳定的氧化物层（2c）。靠近相移多层膜（2）的基板（下层）的层（2a）由相对富金属的金属硅化物构成，上层（2b）金属贫乏的金属硅化物。稳定化氧化物层（2c）的组成为金属不足，其金属含量为下层（2a）的金属含量的三分之一以下。因此，稳定的氧化物层（2c）是高度化学稳定的并且具有高的耐化学性。

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