专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP4089481A2 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND 审中-实审
公开(公告)号：EP4089481A2
公开(公告)日：2022-11-16
申请号：EP22172513.8
申请日：2022-05-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Funatsu, Kenji , Kotake, Masaaki , Inoue, Naoya
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/16
摘要： A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.

2. 发明授权

EP2362267B1 Chemically amplified negative resist composition and patterning process 有权
标题翻译：一种化学放大负性抗蚀剂组合物及其制备方法的模式
公开(公告)号：EP2362267B1
公开(公告)日：2013-01-23
申请号：EP11001591.4
申请日：2011-02-25
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Watanabe, Satoshi , Hatakeyama, Jun , Ohsawa, Youichi , Domon, Daisuke
IPC分类号： G03F7/004 , G03F7/038 , G03F1/64
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111

3. 发明公开

EP2492747A2 Chemically amplified negative resist composition and patterning process 有权
标题翻译： ChemischverstärkteNegativlackzusammensetzung und Strukturierungsverfahren
公开(公告)号：EP2492747A2
公开(公告)日：2012-08-29
申请号：EP12157262.2
申请日：2012-02-28
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Domon, Daisuke , Watanabe, Satoshi
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0045 , C08F26/06 , C08F214/18 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/2041 , H01L21/0271 , Y10S430/114
摘要： A polymer comprising 0.5-10 mol% of recurring units having acid generating capability and 50-99.5 mol% of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.
摘要翻译：使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。当在光刻工艺中使用时，组合物确保有效的灵敏度，使得酸产生组分在抗蚀剂膜中的分布和扩散更均匀，并抑制底物界面处酸的失活。该图案可以形成为在LER和底切方面得到改善的轮廓。

4. 发明公开

EP2264525A3 Chemically amplified positive photoresist composition and pattern forming process 有权
标题翻译：对于图案形成一种化学放大型正光刻胶组合物和方法
公开(公告)号：EP2264525A3
公开(公告)日：2011-11-02
申请号：EP10251092.2
申请日：2010-06-16
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Tanaka, Akinobu , Domon, Daisuke , Watanabe, Satoshi , Ohsawa, Youichi , Ohashi, Masaki
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.

5. 发明公开

EP2360527A1 Chemically amplified positive resist composition for EB or EUV lithography and patterning process 有权
标题翻译： Strukturierungsverfahren手套EBV-EUV-Lithographie
公开(公告)号：EP2360527A1
公开(公告)日：2011-08-24
申请号：EP11001082.4
申请日：2011-02-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Watanabe, Satoshi , Tanaka, Akinobu , Domon, Daisuke
IPC分类号： G03F7/039
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
摘要翻译：提供了用于EB或EUV光刻的化学放大型正性抗蚀剂组合物，其包含（A）聚合物或聚合物共混物，其中聚合物或聚合物共混物的膜不溶于碱性显影剂，但在酸的作用下变得可溶（B ）酸产生剂，（C）碱性化合物和（D）溶剂。碱性化合物（C）是包含具有作为碱性活性位点的具有仲胺结构或叔胺结构的侧链的重复单元的聚合物，并且构成作为组分（A）的聚合物或聚合物的一部分或全部。

6. 发明公开

EP2360526A1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process 有权
标题翻译：对于电子束或EUV平版印刷和图案化方法的化学放大负型树脂组合物
公开(公告)号：EP2360526A1
公开(公告)日：2011-08-24
申请号：EP11001083.2
申请日：2011-02-10
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Masunaga, Keiichi , Watanabe, Satoshi , Tanaka, Akinobu , Domon, Daisuke
IPC分类号： G03F7/038
CPC分类号： G03F7/0382 , G03F7/038
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
摘要翻译：化学放大负性抗蚀剂组合物提供了包含（A）碱溶性聚合物，（B），以产酸剂，和（C）含氮化合物作为碱性组分，所述聚合物（A）转动碱不溶性的催化下的酸。具有在侧链上具有仲胺或叔胺结构的碱性聚合物用作组分（A）和（C）。处理由EB或EUV平版印刷过程中的负性抗蚀剂组合物可以形成精细尺寸的抗蚀剂图案具有优点，包括基地的均匀的扩散，改善的LER，在界面处底物酸的失活来控制，和咬边程度降低。

7. 发明公开

EP2333610A1 Negative resist composition and patterning process 有权
标题翻译：负面抵抗和Musterungsverfahren
公开(公告)号：EP2333610A1
公开(公告)日：2011-06-15
申请号：EP10015194.3
申请日：2010-12-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Tanaka, Akinobu , Masunaga, Keiichi , Domon, Daisuke , Watanabe, Satoshi
IPC分类号： G03F7/038 , G03F7/004
CPC分类号： G03F7/038 , G03F1/08 , G03F7/0045 , G03F7/0382 , G03F7/20 , Y10S430/111
摘要： A negative resist composition comprises at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.
摘要翻译：负性抗蚀剂组合物至少包括：（A）碱溶性的碱性聚合物，通过酸的作用而使其不溶于碱; （B）酸产生器; 和（C）碱性成分，其中，所述基础聚合物至少含有包含由以下通式（1）和通式（2）表示的重均分子量为1,000〜10,000的聚合物。可以存在在形成图案时难以引起桥的负抗蚀剂组合物，并且提供高分辨率和使用其的图案化工艺。

8. 发明公开

EP2330463A1 Negative resist composition and patterning process 有权
标题翻译：负面的抗性和抗性
公开(公告)号：EP2330463A1
公开(公告)日：2011-06-08
申请号：EP10015092.9
申请日：2010-11-29
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Tanaka, Akinobu , Masunaga, Keiichi , Domon, Daisuke , Watanabe, Satoshi
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0382 , G03F7/0045
摘要： There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
摘要翻译：公开了一种负型抗蚀剂组合物，其中基础树脂至少含有由以下通式（1）和通式（2）表示的重复单元，其重均分子量为1,000至10,000，并且含有氮原子的化合物作为碱性成分，含有一种以上具有羧基且不具有共价键合于碱中心氮原子的氢原子的胺化合物。可以存在几乎不发生桥的负性抗蚀剂组合物，基板依赖性低，并且可以形成具有高灵敏度和高分辨率的图案，以及使用该抗蚀剂组合物的图案化工艺。

9. 发明公开

EP2270596A2 Positive resist compostion and pattern forming process 有权
标题翻译：正面抗蚀剂组成和图案形成过程
公开(公告)号：EP2270596A2
公开(公告)日：2011-01-05
申请号：EP10005865.0
申请日：2010-06-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Tanaka, Akinobu , Masunaga, Keiichi , Domon, Daisuke , Watanabe, Satoshi
IPC分类号： G03F7/039
CPC分类号： G03F7/0395 , G03F7/0397
摘要： There is disclosed a positive resist composition comprising at least:
(A) a base resin, which has acidic functional groups protected by acid labile groups, respectively, and is insoluble or hardly soluble in alkali, and which is turned to be soluble in alkali upon elimination of the acid labile groups;
(B) an acid generator; and
(C) a nitrogen-containing compound as a basic component;

wherein the base resin is: a polymer containing repeating units each represented by the following general formula (1); or a polymer containing repeating units each represented by the general formula (1), and containing at least one or more kinds of repeating units each represented by the following general formula (2) and repeating units each represented by the following general formula (3); and
wherein the base resin contains the repeating units represented by the general formulae (1), (2), and (3), respectively, at a sum ratio of 70 mole % or more relative to a total amount of all repeating units constituting the base resin. There can be provided: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
摘要翻译：公开了一种正型抗蚀剂组合物，其至少包含：（A）基础树脂，其分别具有由酸不稳定基团保护的酸性官能团，并且不溶于或难溶于碱，并且在基于消除酸不稳定基团; （B）酸产生剂; 和（C）含氮化合物作为基本组分; 其中所述基础树脂是：含有各自由以下通式（1）表示的重复单元的聚合物; （1）表示的重复单元的聚合物，并且含有至少一种以上由下述通式（2）表示的重复单元和由下述通式（3）表示的重复单元的聚合物， ; 并且其中所述基础树脂以70摩尔％或更多的总和比率分别含有由通式（1），（2）和（3）表示的重复单元，所述重量单元相对于构成基础树脂。可以提供一种正型抗蚀剂组合物，该抗蚀剂组合物具有增强的耐蚀刻性和优异的分辨率，并且即使在抗蚀剂的基板侧界面处，在用于微细加工的光刻中，也能够提供优异的图案轮廓，作为曝光源使用KrF激光器，极紫外线，电子束，X射线等; 以及利用正型抗蚀剂组合物的图案形成工艺。

10. 发明公开

EP4279991A1 NOVEL SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS 审中-实审
公开(公告)号：EP4279991A1
公开(公告)日：2023-11-22
申请号：EP23171817.2
申请日：2023-05-05
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Fukushima, Masahiro , Watanabe, Satoshi , Hatakeyama, Jun , Masunaga, Keiichi , Kotake, Masaaki , Matsuzawa, Yuta
IPC分类号： G03F7/004 , G03F7/039
摘要： The present invention is a sulfonium salt represented by the following formula (1),

wherein "p" represents an integer of 1 to 3; R 11 represents a hydrocarbyl group having 1 to 20 carbon atoms; R f represents a fluorine atom or a fluorine-atom-containing C1 to C6 group selected from alkyl, alkoxy, and sulfide; "q" represents an integer of 1 to 4; R ALU represents an acid-labile group; "r" represents an integer of 1 to 4; R 12 represents a hydrocarbyl group having 1 to 20 carbon atoms; "s" represents an integer of 0 to 4; "t" represents an integer of 0 to 2; R f and - O-R ALU are bonded to adjacent carbon atoms; and X-represents a non-nucleophilic counterion having no polymerizable group. This provides a sulfonium salt used for a resist composition having excellent solvent solubility, high sensitivity and high contrast, and excellent lithographic performance such as exposure latitude and LWR; a resist composition containing the sulfonium salt as a photoacid generator; and a patterning process using the resist composition.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式