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1. 发明公开

EP2889918A1 Solar cell with stainless steel substrate of adjustable bandgap quantum well structure and preparation method therefor 有权
标题翻译： Herstellungsverfahren von Solarzelle mit Edelstahlsubstrat mit anpassbarer Bandabstand-Quantentopfstruktur
公开(公告)号：EP2889918A1
公开(公告)日：2015-07-01
申请号：EP14162221.7
申请日：2014-03-28
申请人： Shenyang Institute of Engineering
发明人： Zhang, Tieyan , Zhang, Dong , Ju, Zhenhe , Zhao, Yan , Li, Yucai , Song, Shiwei , Wang, Jian , Wang, Gang , Bian, Jiming , Liu, Baodan
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/18 , H01L31/20 , H01L21/02
CPC分类号： H01L31/03048 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L31/035209 , H01L31/035236 , H01L31/03762 , H01L31/03926 , H01L31/075 , H01L31/1848 , H01L31/202 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： The present invention belongs to the field of flexible solar cell manufacturing technology, in particular relates to a solar cell with a stainless steel substrate of an adjustable bandgap quantum well structure and a preparation method therefor. The solar cell of the present invention has a specific structure of Al electrode/GZO/P-type In x Ga 1-x N/I layer nc-Si:H intrinsic film/N-type nc-Si:H/GZO/Al back electrode/AIN insulating layer/flexible stainless steel substrate. The preparation method for the present invention comprises the steps of: firstly, preparing an AIN insulating layer and an Al back electrode by a magnetron sputtering method; then preparing a Ga-doped ZnO (GZO) transparent conductive film, an N-type hydrogenated nano-crystalline silicon (nc-Si:H) film, an I layer nc-Si:H intrinsic film, a P-type In x Ga 1-x N film and another GZO transparent conductive film in sequence by an Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PEMOCVD) system; and finally preparing an Al metal electrode. The solar cell with a stainless steel substrate of an adjustable bandgap quantum well structure has excellent flexibility and light weight, is easy to carry, and has industrial potential and market space. Besides, the preparation process of the solar cell of the present invention is simple, which enables the solar cell to be produced in large scale.
摘要翻译：本发明属于柔性太阳能电池制造技术领域，特别涉及具有可调带隙量子阱结构的不锈钢衬底的太阳能电池及其制备方法。本发明的太阳能电池具有Al电极/ GZO / P型In x Ga 1-x N / I层nc-Si:H本征膜/ N型nc-Si：H / GZO / Al 背面电极/ AIN绝缘层/柔性不锈钢基板。本发明的制备方法包括以下步骤：首先，通过磁控溅射法制备AIN绝缘层和Al背电极; 然后制备Ga掺杂的ZnO（GZO）透明导电膜，N型氢化纳米晶硅（nc-Si：H）膜，I层nc-Si：H本征膜，P型In x Ga 1-x N膜和另一个GZO透明导电膜通过电子回旋加速器等离子体增强化学气相沉积（ECR-PEMOCVD）系统; 最后制备Al金属电极。具有可调带隙量子阱结构的不锈钢基板的太阳能电池具有优异的柔性和重量轻，携带方便，具有工业潜力和市场空间。此外，本发明的太阳能电池的制备方法简单，能够大规模地制造太阳能电池。

2. 发明公开

EP2889921A1 Solar cell with flexible substrate of adjustable bandgap quantum well structure and preparation method therefor 有权
标题翻译：具有在柔性基板及其制造方法具有可调带隙量子阱结构的太阳能电池及其
公开(公告)号：EP2889921A1
公开(公告)日：2015-07-01
申请号：EP14162260.5
申请日：2014-03-28
申请人： Shenyang Institute of Engineering
发明人： Zhang, Tieyan , Zhang, Dong , Ju, Zhenhe , Zhao, Yan , Li, Yucai , Song, Shiwei , Wang, Jian , Bian, Jiming , Liu, Baodan , Zheng, Hong
IPC分类号： H01L31/075 , H01L31/0392 , H01L31/0376 , H01L31/0352 , H01L31/0304 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03048 , H01L31/035236 , H01L31/03762 , H01L31/03926 , H01L31/075 , H01L31/1848 , H01L31/202 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： The present invention belongs to the field of flexible solar cell manufacturing technology, in particular relates to a solar cell with a flexible substrate of an adjustable bandgap quantum well structure and a preparation method therefor. The solar cell of the present invention has a specific structure of Al electrode/GZO/P-type nc-Si:H/I layer In x Ga 1-x N intrinsic film/N-type nc-Si:H/GZO/Al back electrode/AIN insulating layer/polyimide (PI) flexible substrate. The preparation method for the present invention comprises the steps of: firstly, preparing an AIN insulating layer and an Al back electrode by a magnetron sputtering method; then preparing a Ga-doped ZnO (GZO) transparent conductive film, an N-type hydrogenated nano-crystalline silicon (nc-Si:H) film, an In x Ga 1-x N quantum well intrinsic crystal film, a P-type nc-Si:H film and another GZO transparent conductive film in sequence by an Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PEMOCVD) system; and finally preparing an Al metal electrode. The solar cell with a flexible substrate of an adjustable bandgap quantum well structure has excellent flexibility and light weight, is easy to carry, and has industrial potential and market space. Besides, the preparation process of the solar cell of the present invention is simple, which enables the solar cell to be produced in large scale.
摘要翻译：本发明属于的柔性太阳能电池的制造技术领域，具体涉及具有可调节的带隙量子阱结构的柔性基板和用于其的制备方法的太阳能电池。本发明的太阳能电池具有Al电极/ GZO / p型纳米硅的具体结构：H / I层的In x镓1-X N的固有膜/ N型纳米硅：H / GZO / Al的背面电极/ AIN绝缘层/聚酰亚胺（PI）的柔性基板。用于本发明的制备方法包括以下步骤：首先，准备由AIN磁控溅射法绝缘层和Al背电极; 然后制备N型的掺Ga的ZnO（GZO）透明导电膜，氢化纳米晶硅（纳米硅：H）膜，的在X镓1-X N量子阱内在晶膜，在P型纳米硅：H膜和另一个GZO透明导电通过电子回旋共振等离子体增强化学气相沉积（ECR PEMOCVD）系统的薄膜在序列; 最后准备Al的金属电极。具有可调节的带隙量子阱结构的柔性基板上的太阳能电池具有优异的柔韧性，重量轻，便于携带，并且具有工业潜力和市场空间。此外，本发明的太阳能电池的制备过程简单，这使得能够在大规模要制造的太阳能电池。

3. 发明授权

EP2889921B1 Solar cell with flexible substrate of adjustable bandgap quantum well structure and preparation method therefor 有权
标题翻译：具有可调节带隙量子阱结构的柔性衬底的太阳能电池及其制备方法
公开(公告)号：EP2889921B1
公开(公告)日：2017-08-02
申请号：EP14162260.5
申请日：2014-03-28
申请人： Shenyang Institute of Engineering
发明人： Zhang, Tieyan , Zhao, Yan , Zhang, Dong , Ju, Zhenhe , Zheng, Hong , Li, Yucai , Song, Shiwei , Wang, Jian , Bian, Jiming , Liu, Baodan
IPC分类号： H01L31/075 , H01L31/0392 , H01L31/0376 , H01L31/0352 , H01L31/0304 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03048 , H01L31/035236 , H01L31/03762 , H01L31/03926 , H01L31/075 , H01L31/1848 , H01L31/202 , Y02E10/544 , Y02E10/548 , Y02P70/521

4. 发明授权

EP2889918B1 Preparation method of solar cell with stainless steel substrate of adjustable bandgap quantum well structure 有权
标题翻译：可调带隙量子阱结构不锈钢基片太阳电池的制备方法
公开(公告)号：EP2889918B1
公开(公告)日：2017-08-02
申请号：EP14162221.7
申请日：2014-03-28
申请人： Shenyang Institute of Engineering
发明人： Zhang, Tieyan , Zhang, Dong , Ju, Zhenhe , Zhao, Yan , Li, Yucai , Song, Shiwei , Wang, Jian , Wang, Gang , Bian, Jiming , Liu, Baodan
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/18 , H01L31/20 , H01L21/02
CPC分类号： H01L31/03048 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L31/035209 , H01L31/035236 , H01L31/03762 , H01L31/03926 , H01L31/075 , H01L31/1848 , H01L31/202 , Y02E10/544 , Y02E10/548 , Y02P70/521

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