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1. 发明公开

EP1291923A3 Heterojunction bipolar transistor and production process therefore 有权
标题翻译：异质结双极型晶体管及其制造方法
公开(公告)号：EP1291923A3
公开(公告)日：2005-04-13
申请号：EP02020240.4
申请日：2002-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Fujita, Koichiro , Kishimoto, Katsuhiko , Yamashita, Masaharu
IPC分类号： H01L29/737 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/42304 , H01L29/7371
摘要： A heterojunction bipolar transistor (100) comprising a collector layer (104) of a first conductivity type, a base layer (105) of a second conductivity type, and an emitter layer (107) of the first conductivity type, which are formed on a semiconductor substrate (101) in this order, and further a collector electrode (113) directly or indirectly connected to the collector layer (104), a base electrode (112) directly or indirectly connected to the base layer (105), and an emitter electrode (111) directly or indirectly connected to the emitter layer (107), wherein a semiconductor protecting layer (106) is formed on the base layer (105) and extended outside an edge of the base layer (105), the base electrode (112) is formed on the semiconductor protecting layer (106), and at least a region under the semiconductor protecting layer (106) is filled with an organic insulator (114).

2. 发明公开

EP0619613A2 A heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：EP0619613A2
公开(公告)日：1994-10-12
申请号：EP94302456.2
申请日：1994-04-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Twynam, John Kevin , Kishimoto, Katsuhiko , Kinosada, Toshiaki
IPC分类号： H01L29/73
CPC分类号： H01L29/7371
摘要： The present invention provides a heterojunction bipolar a collector layer (3), a base layer (4), an emitter layer (6), a transition layer (5) formed between the base (4) layer and the emitter layer (6), a collector electrode (8) connected to the collector layer, a base electrode (9) connected to the base layer, and an emitter electrode (10) connected to the emitter layer, wherein the emitter layer (6) and the transition layer (5) are formed of a composition including elements forming the base layer (4) and at least one element different from the elements, a composition of the different element in the transition layer at the emitter side is substantially equal to that of the emitter layer, a composition of the different element in the transition layer at the base side is smaller than that of the emitter side and varies abruptly towards the base layer, and the composition of the transition layer varies in a continuous or discontinuous grading from the base side to the emitter side.
摘要翻译：本发明提供了一种异质结双极集电极层（3），基极层（4），发射极层（6），在基极层（4）和发射极层（6）之间形成的过渡层（5）连接到集电极层的集电极电极（8），连接到基极层的基极电极（9）和连接到发射极层的发射极电极（10），其中发射极层（6）和过渡层）由包括形成基层（4）和至少一种不同于所述元素的元素的元素的组合物形成，所述发射极侧的所述过渡层中的所述不同元素的组成基本上等于所述发射极层的组成，a 基极侧的过渡层中的不同元素的组成比发射极侧的小，并且朝向基极层突然变化，并且过渡层的组成从基极侧到发射极以连续或不连续的渐变而变化侧。

3. 发明公开

EP0619613A3 A heterojunction bipolar transistor 失效
标题翻译： Heteroübergang-Bipolartransistor。
公开(公告)号：EP0619613A3
公开(公告)日：1995-03-29
申请号：EP94302456.2
申请日：1994-04-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Twynam, John Kevin , Kishimoto, Katsuhiko , Kinosada, Toshiaki
IPC分类号： H01L29/73
CPC分类号： H01L29/7371
摘要： The present invention provides a heterojunction bipolar a collector layer (3), a base layer (4), an emitter layer (6), a transition layer (5) formed between the base (4) layer and the emitter layer (6), a collector electrode (8) connected to the collector layer, a base electrode (9) connected to the base layer, and an emitter electrode (10) connected to the emitter layer, wherein the emitter layer (6) and the transition layer (5) are formed of a composition including elements forming the base layer (4) and at least one element different from the elements, a composition of the different element in the transition layer at the emitter side is substantially equal to that of the emitter layer, a composition of the different element in the transition layer at the base side is smaller than that of the emitter side and varies abruptly towards the base layer, and the composition of the transition layer varies in a continuous or discontinuous grading from the base side to the emitter side.

4. 发明授权

EP1291923B1 Heterojunction bipolar transistor and production process therefore 有权
标题翻译：因此异质结双极晶体管和生产工艺
公开(公告)号：EP1291923B1
公开(公告)日：2008-09-17
申请号：EP02020240.4
申请日：2002-09-10
申请人： Sharp Kabushiki Kaisha
发明人： Fujita, Koichiro , Kishimoto, Katsuhiko , Yamashita, Masaharu
IPC分类号： H01L29/737 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/42304 , H01L29/7371

5. 发明公开

EP1291923A2 Heterojunction bipolar transistor and production process therefore 有权
标题翻译：因此异质结双极晶体管和生产工艺
公开(公告)号：EP1291923A2
公开(公告)日：2003-03-12
申请号：EP02020240.4
申请日：2002-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Fujita, Koichiro , Kishimoto, Katsuhiko , Yamashita, Masaharu
IPC分类号： H01L29/737 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/42304 , H01L29/7371
摘要： A heterojunction bipolar transistor comprising a collector layer of a first conductivity type, a base layer of a second conductivity type, and an emitter layer of the first conductivity type, which are formed on a semiconductor substrate in this order, and further a collector electrode directly or indirectly connected to the collector layer, a base electrode directly or indirectly connected to the base layer, and an emitter electrode directly or indirectly connected to the emitter layer, wherein a semiconductor protecting layer is formed on the base layer and extended outside an edge of the base layer, the base electrode is formed on the semiconductor protecting layer, and at least a region under the semiconductor protecting layer is filled with an organic insulator.
摘要翻译：一种异质结双极型晶体管，其特征在于，在半导体基板上依次形成有第一导电型的集电极层，第二导电型的基极层以及第一导电型的发射极层，另外，还包括集电极电极或间接连接到所述集电极层，直接或间接连接到所述基极层的基极，以及直接或间接连接到所述发射极层的发射极电极，其中半导体保护层形成在所述基极层上并延伸到基底层，基底电极形成在半导体保护层上，并且半导体保护层下面的至少一个区域填充有有机绝缘体。

6. 发明授权

EP0619613B1 A heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：EP0619613B1
公开(公告)日：2001-11-21
申请号：EP94302456.2
申请日：1994-04-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Twynam, John Kevin , Kishimoto, Katsuhiko , Kinosada, Toshiaki
IPC分类号： H01L29/73
CPC分类号： H01L29/7371

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