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1. 发明公开

EP3190633A1 WET-ETCHING METHOD FOR N-TYPE DOUBLE-SIDED BATTERY 审中-公开
标题翻译：用于N型双面电池的湿法蚀刻方法
公开(公告)号：EP3190633A1
公开(公告)日：2017-07-12
申请号：EP15849346.0
申请日：2015-05-14
申请人： Shanghai Shenzhou New Energy Development Co. Ltd.
发明人： ZHENG, Fei , ZHANG, Zhongwei , SHI, Lei , RUAN, Zhongli , ZHAO, Chen , ZHAO, Yuxue
IPC分类号： H01L31/18
CPC分类号： H01L31/0684 , H01L31/0288 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention discloses a wet etching method for an N-type bifacial cell including: (1) providing an N-type silicon wafer, proceeding with surface structuralization on the N-type silicon wafer, and producing a PN junction on a surface of the N-type silicon wafer by using a boron diffusion technique; (2) proceeding with a first mixed acid washing, etching the PN junction on an edge and a back surface of the N-type silicon wafer; (3) proceeding with a first pure water washing and a first alkaline washing, removing residual acid solution from the surface of the N-type silicon wafer; (4) proceeding with a second pure water washing and a second mixed acid washing, removing residual impurities from the surface of the N-type silicon wafer; (5) proceeding with a third pure water washing and air drying; and (6) after air drying, completing etching on the N-type bifacial cell. Under the premise of assuring the cell efficiency is not reduced, the present invention increases the polishing passivation effect on the back surface to increase the optical-electrical conversion efficiency of the N-type bifacial cell. Furthermore, increasing the etching on the edge and the back surface removes the PN junction diffused to the edge of the N-type silicon wafer during the boron diffusion procedure, avoiding the leakage problem on the edge of the N-type bifacial cell product.
摘要翻译：本发明公开了一种用于N型双面电池的湿式蚀刻方法，其包括：（1）提供N型硅晶片，在N型硅晶片上进行表面结构化，并且在N型硅晶片的表面上产生PN结采用硼扩散技术的N型硅晶片; （2）进行第一次混酸洗涤，刻蚀N型硅晶片边缘和背面的PN结; （3）进行第一次纯水洗涤和第一次碱洗，从N型硅晶片表面除去残留的酸溶液; （4）进行第二次纯水洗涤和第二次混合酸洗涤，从N型硅晶片表面除去残余杂质; （5）进行第三次纯水洗和空气干燥; （6）空气干燥后，在N型双面电池上完成蚀刻。在保证电池效率不降低的前提下，本发明提高了背面的抛光钝化效果，提高了N型双面电池的光电转换效率。此外，在硼扩散过程中，增加边缘和背面上的蚀刻可消除扩散到N型硅晶片边缘的PN结，从而避免了N型双面电池产品边缘的泄漏问题。

2. 发明公开

EP3190629A1 HIGH-EFFICIENCY N-TYPE DOUBLE-SIDED SOLAR CELL 审中-公开
标题翻译：高效率的N型双面太阳能电池
公开(公告)号：EP3190629A1
公开(公告)日：2017-07-12
申请号：EP15849815.4
申请日：2015-05-14
申请人： Shanghai Shenzhou New Energy Development Co. Ltd.
发明人： ZHENG, Fei , ZHANG, Zhongwei , SHI, Lei , RUAN, Zhongli , TAO, Zhihua , ZHAO, Yuxue
IPC分类号： H01L31/0288 , H01L31/068 , H01L31/0216
CPC分类号： H01L31/0684 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/02327 , H01L31/02363 , H01L31/0288 , H01L31/068 , Y02E10/547
摘要： The present invention discloses a high-efficiency N-type bifacial solar cell including: an N-type cell base including a structuralized surface; a P-type doped region formed on a front surface of the N-type cell base; a polished passivation layer formed on a back surface of the N-type cell base by etching; an N + passivation layer formed by doping phosphorus into a top portion of the polished passivation layer adjacent to the N-type cell base; a first silicon dioxide layer formed on the P-type doped region and a second silicon dioxide layer disposed on the N + passivation layer; a first silicon nitride antireflection layer formed on the first silicon dioxide layer and a second silicon nitride antireflection layer formed on the second silicon dioxide layer; and a first metal electrode formed on the front surface of the N-type cell base and a second metal electrode formed on the back surface of the N-type cell base. The present invention uses the polished passivation layer and the N + passivation layer to obtain a higher open-circuit voltage, and the double-side printing permits two sides of the cell to collect solar energy when illuminated by sunlight, increasing the overall power output and improving the conversion efficiency of the cell.
摘要翻译：本发明公开了一种高效N型双面太阳能电池，包括：包括结构化表面的N型电池基体; 形成在N型电池基底的前表面上的P型掺杂区域; 抛光的钝化层，其通过蚀刻形成在N型电池基底的背表面上; 通过将磷掺杂到抛光的钝化层的与N型电池基极相邻的顶部中而形成的N +钝化层; 形成在所述P型掺杂区上的第一二氧化硅层和布置在所述N +钝化层上的第二二氧化硅层; 形成在所述第一二氧化硅层上的第一氮化硅抗反射层和形成在所述第二二氧化硅层上的第二氮化硅抗反射层; 以及形成在N型电池基底的前表面上的第一金属电极和形成在N型电池基底的后表面上的第二金属电极。本发明使用抛光钝化层和N +钝化层来获得更高的开路电压，并且双面打印允许单元的两侧在被太阳光照射时收集太阳能，增加总功率输出并改善电池的转换效率。

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