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热词
    • 2. 发明公开
    • Motion sensor, and method of manufacturing motion sensor
    • Bewegungssensor und Verfahren zur Herstellung des Bewegungssensors
    • EP2363689A2
    • 2011-09-07
    • EP11156418.3
    • 2011-03-01
    • Seiko Epson Corporation
    • Otsuki, Tetsuya
    • G01C19/56
    • G01C19/5628
    • A sensor device 1 includes: a silicon substrate 10; a first electrode 11 provided at an active surface 10a side of the silicon substrate 10; an external connection terminal 12 provided at the active surface 10a side so as to be electrically connected to the first electrode 11; a stress relief layer 15 provided between the silicon substrate 10 and the external connection terminal 12; and a vibrating gyro element 20 as a sensor element including a extraction electrode 29. The vibrating gyro element 20 is held to the silicon substrate 10 by connection between the extraction electrode 29 and the external connection terminal 12.
    • 传感器装置1包括:硅基板10; 设置在硅衬底10的有源面10a侧的第一电极11; 设置在有源表面10a侧以便与第一电极11电连接的外部连接端子12; 设置在硅衬底10和外部连接端子12之间的应力消除层15; 以及作为包括提取电极29的传感器元件的振动陀螺元件20.振动陀螺元件20通过引出电极29和外部连接端子12之间的连接被保持在硅衬底10上。