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1. 发明公开

EP0750360A2 Electrode substrate for battery and process for preparing the same 失效
标题翻译： ElektrodensubstratfürBatterie und Verfahren zu deren Herstellung
公开(公告)号：EP0750360A2
公开(公告)日：1996-12-27
申请号：EP96109763.1
申请日：1996-06-18
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Watanabe, Kenichi , Yamanaka, Shosaku
IPC分类号： H01M4/80 , C22C1/08
CPC分类号： H01M4/80 , H01M4/808
摘要： An electrode substrate, for a battery, as a support for an active material used in a collector for a battery, comprising a metallic porous structure possessing interconnecting pores with a porosity of not less than 90% and a number of pores per cm of not less than 10 and having an Fe/Ni two-layer structure wherein Fe constitutes the interior of a skeleton of a porous body constituting the porous structure with the surface portion of the skeleton coated with Ni. Preferably, Fe constituting the interior of the skeleton has a purity of not less than 98% by weight, and the thickness of the nickel coating layer having an Fe content of not more than 10% by weight is 0.1 to 10 µm. The ratio of thickness of the Fe-diffused layer to the thickness of the Ni coating layer is regulated to not more than 0.65 by forming a metallic porous body of Fe using a porous resin as a substrate, plating the metallic porous body with Ni, heat treating the plated body.
摘要翻译：一种电池用电极基板，作为用于电池用集电体的活性物质的支撑体，其特征在于，具有金属多孔结构体，该金属多孔结构体具有孔隙率不小于90％的孔隙率和不小于每cm的孔数并且具有Fe / Ni两层结构，其中Fe构成构成多孔结构的骨架的内部，其中骨架的表面部分涂覆有Ni。优选构成骨架内部的Fe的纯度为98重量％以上，Fe含量为10重量％以下的镍被覆层的厚度为0.1〜10μm。通过使用多孔树脂作为基材形成Fe的金属多孔体，将Ni扩散层的厚度与Ni被覆层的厚度的比例调整为不大于0.65，将金属多孔体用Ni，热处理电镀体。

2. 发明公开

EP0490776A3 A thin film of superconductor and a process for preparing the same 失效
标题翻译：超薄膜薄膜及其制备方法
公开(公告)号：EP0490776A3
公开(公告)日：1992-11-19
申请号：EP91403398.0
申请日：1991-12-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： Harada, Keizo , Nakanishi, Hidenori , Itozaki, Hideo
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701
摘要： A thin film of oxide superconductor deposited on a single crustal substrate of silicon wefer. A buffer layer of (100) or (110) oriented Ln₂O₃, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide ; ZrO₂, YSZ or metal Y, Er is preferably interposed between the Ln₂O₃ buffer layer and the silicon wafer.

3. 发明公开

EP0446146A2 Stacked Josephson junction device composed of oxide superconductor material 失效
标题翻译： Gestapelte Josephson-Übergang-Einrichtungen aus oxydisch supraleitendem材料zusammengesetzt。
公开(公告)号：EP0446146A2
公开(公告)日：1991-09-11
申请号：EP91400666.3
申请日：1991-03-11
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： A stacked Josephson junction device includes a pair of oxide superconductor layers and a non-superconductor layer formed between the pair of oxide superconductor layers. The oxide superconductor layers are composed of a compound oxide having the composition expressed by the general formula:

LnBa₂Cu₃O v

(where Ln is Y or rare earth element and 6
The non-superconductor layer is composed of a chemical compound having the composition expressed by the general formula:

Bi₂Y x Sr y Cu z O w

(where x, y, z and w indicate ratio of components
0 ≦ x ≦ 2,
1 ≦ y ≦ 3,
1 ≦ z ≦ 3,
6 ≦ w ≦ 13.
摘要翻译：层叠的约瑟夫逊结器件包括一对氧化物超导体层和在该对氧化物超导体层之间形成的非超导体层。氧化物超导体层由具有以下通式表示的组成的复合氧化物构成：LnBa2Cu3Ov（其中Ln为Y或稀土元素，6

4. 发明授权

EP0750360B1 Electrode substrate for battery and process for preparing the same 失效
标题翻译：对于电池及它们的制备方法电极基板
公开(公告)号：EP0750360B1
公开(公告)日：2000-03-15
申请号：EP96109763.1
申请日：1996-06-18
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Watanabe, Kenichi , Yamanaka, Shosaku
IPC分类号： H01M4/80 , C22C1/08
CPC分类号： H01M4/80 , H01M4/808

5. 发明公开

EP0446146A3 Stacked Josephson junction device composed of oxide superconductor material 失效
标题翻译：由氧化物超导体材料组成的堆积JOSEPHSON接头器件
公开(公告)号：EP0446146A3
公开(公告)日：1992-01-02
申请号：EP91400666.3
申请日：1991-03-11
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： A stacked Josephson junction device includes a pair of oxide superconductor layers and a non-superconductor layer formed between the pair of oxide superconductor layers. The oxide superconductor layers are composed of a compound oxide having the composition expressed by the general formula:
LnBa₂Cu₃O v
(where Ln is Y or rare earth element and 6 The non-superconductor layer is composed of a chemical compound having the composition expressed by the general formula:
Bi₂Y x Sr y Cu z O w
(where x, y, z and w indicate ratio of components
0 ≦ x ≦ 2,
1 ≦ y ≦ 3,
1 ≦ z ≦ 3,
6 ≦ w ≦ 13.

6. 发明公开

EP0410868A3 Superconducting thin film of compound oxide and process for preparing the same 失效
标题翻译：复合氧化物的超薄膜及其制备方法
公开(公告)号：EP0410868A3
公开(公告)日：1991-05-29
申请号：EP90402121.9
申请日：1990-07-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo
IPC分类号： H01L39/24
CPC分类号： H01L39/2432 , H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi₂O₃ being interposed between the superconducting thin film and the substrate.

7. 发明公开

EP0358545A2 Improvement in a process for producing thallium type superconducting thin film 失效
标题翻译： Prozess zur Herstellung thalliumartiger supraleitenderDünnfilme。
公开(公告)号：EP0358545A2
公开(公告)日：1990-03-14
申请号：EP89402268.0
申请日：1989-08-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo , Yazu, Shuji
IPC分类号： H01L39/24 , C04B35/00
CPC分类号： H01L39/2451 , Y10S505/731 , Y10S505/732 , Y10S505/742
摘要： Improvement in heat-treatment of a superconducting thin film of thallium type compound oxide deposited on a substrate by PVD or CVD. In the invention, the heat-treatment is effected at a temperature between 880 °C and 920 °C for a predetermined time duration under such a condition that the partial pressure of thallium oxide become higher than the saturated vapour pressure of thallium oxide at said temperature.
摘要翻译：通过PVD或CVD沉积在衬底上的铊型复合氧化物的超导薄膜的热处理的改进。在本发明中，在880℃〜920℃的温度下，在氧化铊的分压比所述温度下的氧化铊的饱和蒸气压高的条件下进行热处理。

8. 发明授权

EP0366510B2 Process for preparing superconductor of compound oxide of Bi-Sr-Ca-Cu system 失效
标题翻译：一种生产铋锶钙-Cu系的Oxidverbindungssupraleiters方法
公开(公告)号：EP0366510B2
公开(公告)日：1998-01-14
申请号：EP89402733.3
申请日：1989-10-03
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo , Higaki, Kenjiro , Yazu, Shuji
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： C04B35/4521 , C23C14/087 , C23C16/408 , H01L39/126 , H01L39/2435 , Y10S505/731 , Y10S505/732 , Y10S505/742 , Y10S505/782

9. 发明授权

EP0410868B1 Superconducting thin film of compound oxide and process for preparing the same 失效
标题翻译：的超导薄膜的氧化物和它们的制备方法的。
公开(公告)号：EP0410868B1
公开(公告)日：1995-02-22
申请号：EP90402121.9
申请日：1990-07-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo
IPC分类号： H01L39/24
CPC分类号： H01L39/2432 , H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704

10. 发明授权

EP0341148B1 A semiconductor substrate having a superconducting thin film 失效
标题翻译：用薄的超导层的半导体衬底。
公开(公告)号：EP0341148B1
公开(公告)日：1994-10-12
申请号：EP89401238.4
申请日：1989-05-02
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Harada, Keizo , Itozaki, Hideo , Fujimoro, Naoji , Yazu, Shuji , Jodai, Tetsuji
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/2461

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