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    • 5. 发明公开
    • Method for producing a resist composition
    • 生产抗蚀剂组合物的方法
    • EP2843471A1
    • 2015-03-04
    • EP14003007.3
    • 2014-09-01
    • Shin-Etsu Chemical Co., Ltd.
    • Ogihara, TsutomuBiyajima, YusukeIwabuchi, Motoaki
    • G03F7/075G03F7/09G03F7/16
    • G03F7/0757B01D61/14B01D61/145B01D61/147B01D61/18B01D61/22C08G77/04C08L83/04C09D183/06G03F7/0752G03F7/094G03F7/16
    • The present invention provides a method for producing a resist composition used in a process for producing a semiconductor apparatus, the method including the steps of:
      cleaning an apparatus for producing the resist composition with a cleaning liquid;
      applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus for producing the resist composition;
      repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100nm or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm 2 or less; and
      producing the resist composition by using the apparatus for producing the resist composition after the step of repeating.
      There can be provided a method for producing a resist composition capable of producing a resist composition whose coating defects are reduced.
    • 本发明提供一种半导体装置的制造方法中使用的抗蚀剂组合物的制造方法,该制造方法包括以下工序:用清洗液对制造抗蚀剂组合物的装置进行清洗的工序; 从制造抗蚀剂组合物的装置中除去清洗液后,通过旋涂将清洗液涂布在评价基板上, 重复清洁步骤和施加步骤,直到在施加清洁液之前和之后在评估基板上尺寸为100nm或更大的缺陷密度的变化变为0.2 / cm2或更小; 并且在重复步骤之后通过使用用于制造抗蚀剂组合物的设备来制造抗蚀剂组合物。 可以提供一种制造抗蚀剂组合物的方法,所述抗蚀剂组合物能够制造涂层缺陷减少的抗蚀剂组合物。