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1. 发明公开

EP1489620A2 Nonvolatile semiconductor memory device, and programming method and erasing method thereof 有权转让
标题翻译： NichtflüchtigerSpeicher und sein Programmier- undLöschverfahren
公开(公告)号：EP1489620A2
公开(公告)日：2004-12-22
申请号：EP04253628.4
申请日：2004-06-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Tamai, Yukio , Inoue, Kohji , Morita, Teruaki
IPC分类号： G11C11/15 , G11C16/28
CPC分类号： G11C13/0007 , G11C13/0069 , G11C16/3427 , G11C2013/009 , G11C2213/31 , G11C2213/77
摘要： One end of each variable resistive element (22), which forms a memory array (1), in the same row is connected to the same word line (20) and the other end of each variable resistive element (22) in the same column is connected to the same bit line (21). A first word line voltage is selected and applied to the selected word line, a second word line voltage is selected and applied to the unselected word lines, a first bit line voltage is selected and applied to the selected bit line, and a second bit line voltage is selected and applied to the unselected bit lines. The voltage difference between the first word line voltage and the first bit line voltage is set at a value that is no less than the first voltage difference that changes the resistance value of a variable resistive element, and the voltage difference between the first word line voltage and the second bit line voltage, the voltage difference between the second word line voltage and the first bit line voltage and the voltage difference between the second word line voltage and the second bit line voltage are respectively set at a value that is no greater than the second voltage difference that does not change the resistance value of a variable resistive element.
摘要翻译：在同一行中形成存储器阵列（1）的每个可变电阻元件（22）的一端连接到相同的字线（20），而每个可变电阻元件（22）的另一端连接在同一列连接到相同的位线（21）。选择第一字线电压并将其施加到所选字线，选择第二字线电压并将其施加到未选字线，选择第一位线电压并将其施加到所选择的位线，并且将第二位线电压电压被选择并施加到未选择的位线。将第一字线电压和第一位线电压之间的电压差设定为不小于改变可变电阻元件的电阻值的第一电压差和第一字线电压之间的电压差和第二位线电压，第二字线电压与第一位线电压之间的电压差和第二字线电压与第二位线电压之间的电压差分别设定为不大于不改变可变电阻元件的电阻值的第二电压差。

2. 发明授权

EP1489620B1 Nonvolatile semiconductor memory device, and programming method and erasing method thereof 有权转让
标题翻译：非易失性存储器及其编程和擦除方法
公开(公告)号：EP1489620B1
公开(公告)日：2007-01-31
申请号：EP04253628.4
申请日：2004-06-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Tamai, Yukio , Inoue, Kohji , Morita, Teruaki
IPC分类号： G11C11/15 , G11C16/28
CPC分类号： G11C13/0007 , G11C13/0069 , G11C16/3427 , G11C2013/009 , G11C2213/31 , G11C2213/77

3. 发明公开

EP1489620A3 Nonvolatile semiconductor memory device, and programming method and erasing method thereof 有权转让
标题翻译：非易失性存储器及其编程和擦除方法
公开(公告)号：EP1489620A3
公开(公告)日：2005-02-09
申请号：EP04253628.4
申请日：2004-06-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Tamai, Yukio , Inoue, Kohji , Morita, Teruaki
IPC分类号： G11C11/15 , G11C16/28
CPC分类号： G11C13/0007 , G11C13/0069 , G11C16/3427 , G11C2013/009 , G11C2213/31 , G11C2213/77
摘要： One end of each variable resistive element (22), which forms a memory array (1), in the same row is connected to the same word line (20) and the other end of each variable resistive element (22) in the same column is connected to the same bit line (21). A first word line voltage is selected and applied to the selected word line, a second word line voltage is selected and applied to the unselected word lines, a first bit line voltage is selected and applied to the selected bit line, and a second bit line voltage is selected and applied to the unselected bit lines. The voltage difference between the first word line voltage and the first bit line voltage is set at a value that is no less than the first voltage difference that changes the resistance value of a variable resistive element, and the voltage difference between the first word line voltage and the second bit line voltage, the voltage difference between the second word line voltage and the first bit line voltage and the voltage difference between the second word line voltage and the second bit line voltage are respectively set at a value that is no greater than the second voltage difference that does not change the resistance value of a variable resistive element.

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