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1. 发明公开

EP0335148A3 Method for programming MOS and CMOS rom memories 失效
标题翻译：编程MOS和CMOS ROM存储器的方法
公开(公告)号：EP0335148A3
公开(公告)日：1990-01-24
申请号：EP89104165.9
申请日：1989-03-09
申请人： SGS-THOMSON MICROELECTRONICS S.r.l.
发明人： Bekkering, Roland Quirinus , Cereda, Manlio Sergio
IPC分类号： H01L21/82 , H01L27/10
CPC分类号： H01L27/11266 , H01L27/112
摘要： A method for programming ROM memories at an advanced memory manufacture stage. The method, after defining the active regions, possibly implanting threshold-correction boron, performing gate oxidation and providing the gate regions, comprises at least partially masking the regions adjacent to the gate regions of the memory cells which must be made permanently non-conductive. During the subsequent implanting of the source and drain regions, the regions thus shielded are not implanted, so that in the programmed cells the source and/or drain regions are completely missing or in any case separated from the related gate regions by such a distance as to prevent switching on of the memory cell when reading in the memory.
摘要翻译：一种在高级存储器制造阶段对ROM存储器进行编程的方法。该方法在定义有源区域之后，可能注入阈值校正硼，执行栅极氧化和提供栅极区域，包括至少部分地掩蔽与必须永久不导电的存储器单元的栅极区域相邻的区域。在随后的源极和漏极区域的注入期间，这样屏蔽的区域不被植入，使得在编程的单元中源极和/或漏极区域完全缺失或者在任何情况下都与相关的栅极区域分开一段距离以防止在读取存储器时接通存储器单元。

2. 发明公开

EP0335148A2 Method for programming MOS and CMOS rom memories 失效
标题翻译： Verfahren zur Pragrammierung von MOS和CMOS-ROM-Speichern。
公开(公告)号：EP0335148A2
公开(公告)日：1989-10-04
申请号：EP89104165.9
申请日：1989-03-09
申请人： SGS-THOMSON MICROELECTRONICS S.r.l.
发明人： Bekkering, Roland Quirinus , Cereda, Manlio Sergio
IPC分类号： H01L21/82 , H01L27/10
CPC分类号： H01L27/11266 , H01L27/112
摘要： A method for programming ROM memories at an advanced memory manufacture stage. The method, after defining the active regions, possibly implanting threshold-correction boron, performing gate oxidation and providing the gate regions, comprises at least partially masking the regions adjacent to the gate regions of the memory cells which must be made permanently non-conductive. During the subsequent implanting of the source and drain regions, the regions thus shielded are not implanted, so that in the programmed cells the source and/or drain regions are completely missing or in any case separated from the related gate regions by such a distance as to prevent switching on of the memory cell when reading in the memory.
摘要翻译：一种在高级存储器制造阶段对ROM存储器进行编程的方法。该方法在定义有源区域之后，可能注入阈值校正硼，执行栅极氧化和提供栅极区域，包括至少部分地掩蔽与必须永久不导电的存储器单元的栅极区域相邻的区域。在随后的源极和漏极区域的注入期间，这样屏蔽的区域不被植入，使得在编程的单元中源极和/或漏极区域完全缺失或者在任何情况下都与相关的栅极区域分开一段距离以防止在读取存储器时接通存储器单元。

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