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    • 1. 发明公开
    • Low power, low voltage level shifter
    • Pegelelsfürkleine Speisespannungen mit geringem Verbrauch
    • EP0748048A1
    • 1996-12-11
    • EP96303324.6
    • 1996-05-13
    • SGS-THOMSON MICROELECTRONICS, INC.
    • Yin, Rong
    • H03K19/017
    • H03K19/01707H03K19/0013
    • A low power, low voltage level shifter is provided. The voltage level shifter includes a first switching circuit, and a second switching circuit. The first switching circuit has a first input terminal for receiving a first oscillating signal, and based on the first oscillating signal, switches the output of the first switching circuit between a first voltage level and a second voltage level. The second switching circuit has a second input terminal connected to the output terminal of the first switching circuit. The second switching circuit also has a third input terminal for receiving a second oscillating signal which is out of phase with the first oscillating signal. Based on the input signals received, the second switching circuit generates an output signal that switches between a third voltage level and a fourth voltage level at a selected rate and frequency.
    • 提供了低功率,低电压电平转换器。 电压电平移位器包括第一开关电路和第二开关电路。 第一开关电路具有用于接收第一振荡信号的第一输入端,并且基于第一振荡信号,在第一电压电平和第二电压电平之间切换第一开关电路的输出。 第二开关电路具有连接到第一开关电路的输出端的第二输入端。 第二开关电路还具有用于接收与第一振荡信号异相的第二振荡信号的第三输入端。 基于所接收的输入信号,第二开关电路产生以所选择的速率和频率在第三电压电平和第四电压电平之间切换的输出信号。
    • 2. 发明公开
    • Power supply isolation and switching circuit
    • Stromversorgungsisolierung und Schaltkreis
    • EP0747957A2
    • 1996-12-11
    • EP96303777.5
    • 1996-05-28
    • SGS-THOMSON MICROELECTRONICS, INC.
    • Yin, RongO'Rourke, Glenn Thomas
    • H01L27/02H01L27/092
    • H02J9/00G05F1/465H02J1/10
    • A power supply isolation and switching circuit formed in a semiconductor structure which eliminates a parasitic diode effect. The switching circuit receives a first power source and a second power source, and selects between the two sources to provide the selected power source to a load device. The switching circuit includes a first transistor, and second and third transistors. The first transistor is connected to the first power source for selecting the first power source as the supply voltage of the load device. The second and third transistors are connected in series to the second power source for selecting the second power source. The second and third transistors are formed in two separate wells of a first conductivity type that are spaced apart and isolated from each other by a semiconductor region of a second conductivity type different from the first conductivity type. In operation, when the voltage level of the first power source is higher than a predetermined voltage, the first transistor is turned on to connect the first power source to the load device, and the second and third transistors are turned off to isolate the second power source from the load device. When its voltage falls below the predetermined voltage, however, the first transistor is turned off to isolate the first power source and the second and third transistors are turned on to connect the second power source to the load device.
    • 所述开关电路包括连接在所述第一电源和所述负载装置之间的第一开关,所述开关具有第一输入端,用于当所述第一电源的电压高于所述第一输入端时接收控制信号以将所述第一电源连接到所述负载装置 阈值电压。 第二开关连接到第二电源,并且形成在半导体结构中的第一导电类型的第一阱中。 第二个开关具有第二个输入。 第三开关与第二开关串联连接,并形成在半导体结构中的第一导电类型的第二阱中。 第三个开关有第三个输入。 第一和第二阱是通过不同于第一导电类型的第二导电类型的半导体区域彼此隔开并隔离的两个分开的第一导电类型的阱。 当第一电源的电压低于阈值电压时,第二和第三输入接收控制信号以将第二电源连接到负载装置。